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Semiconductor memory device

  • US 20030119265A1
  • Filed: 02/03/2003
  • Published: 06/26/2003
  • Est. Priority Date: 11/29/2000
  • Status: Abandoned Application
First Claim
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1. A method for forming a semiconductor device comprising:

  • forming a pair of transfer MOS transistors controlled by a word line; and

    forming a pair of data retaining flip-flop circuits from serially connected load elements and drive MOS transistors;

    wherein the transfer MOS transistors are formed to have a threshold voltage greater than that of the drive MOS transistors.

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