Organic semiconductor device and method

• US 20030122120A1
• Filed: 12/28/2001
• Published: 07/03/2003
• Est. Priority Date: 12/28/2001
• Status: Abandoned Application

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Kalyansundaram, Krishna, Zhang, Jie, Gamota, Daniel R., Brazis, Paul W. Jr.
• Application Number:
  US10/034,645
• Publication Number:
  US 20030122120A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate

Abstract

A semiconductor device comprising a flexible or rigid substrate (10) having a gate electrode (11) formed thereon with a source electrode (14) and a drain electrode (15) overlying the gate electrode (11) and organic semiconductor material (16) disposed at least partially thereover. The source electrode (14) and the drain electrode (15) each have a non-linear boundary segment that effectively extends the channel width between these two electrodes to thereby increase the current handling capability of the resultant device. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Claims

1. An active device comprising:

a substrate;

a first electrode formed overlying the substrate, wherein the first electrode has at least a portion thereof comprising a nonlinear boundary;

a second electrode formed overlying the substrate, wherein the second electrode has a portion thereof comprising a nonlinear boundary that substantially conforms to at least a part of the nonlinear boundary of the first electrode and that is positioned proximal to the nonlinear boundary of the first electrode;

an organic semiconductor layer disposed in contact with at least a portion of the first and second electrode.

2. The active device of claim 1 wherein the substrate comprises a flexible substrate.

3. The active device of claim 1 wherein the substrate comprises a substantially rigid substrate.

4. The active device of claim 1 wherein the first electrode comprises a drain and the second electrode comprises a source.

5. The active device of claim 4 and further comprising a gate electrode formed overlying the substrate and being at least partially coextensive with the first and second electrode.

6. The active device of claim 5 and further comprising a dielectric layer disposed at least partially between the gate electrode and the organic semiconductor layer.

7. The active device of claim 6 wherein the dielectric layer is comprised of one of a polymer, a polymer thick film dielectric, and paper.

8. The active device of claim 1 wherein the nonlinear boundary of the first electrode comprises a plurality of extensions.

9. The active device of claim 8 wherein the plurality of extensions of the first electrode are interdigitated with a plurality of extensions of the second electrode.

10. The active device of claim 8 wherein the plurality of extensions comprise rectangular shaped extensions.

11. The active device of claim 10 wherein rectangular shaped extensions of the first electrode are interdigitated with rectangular shaped extensions of the second electrode.

12. The active device of claim 1 wherein the nonlinear boundary of the first electrode is spaced no more than 100 micrometers from the nonlinear boundary of the second electrode.

13. The active device of claim 1 wherein at least one of the first and second electrodes is comprised of at least one of a conductive metal, a conductive polymer, a conductive polymer thick film, and a conductive nano-particles filled ink.

14. A method of forming an active device comprising:

providing a substrate;

depositing a first electrode to overlie the substrate, wherein the first electrode has at least a portion thereof comprising a nonlinear boundary;

depositing a second electrode to overlie the substrate, wherein the second electrode has a portion thereof comprising a nonlinear boundary that substantially conforms to at least a part of the nonlinear boundary of the first electrode and that is positioned proximal to the nonlinear boundary of the first electrode;

depositing an organic semiconductor layer to contact at least a portion of the first and second electrode.

15. The method of claim 14 wherein providing a substrate comprises providing a flexible substrate.

16. The method of claim 14 wherein providing a substrate comprises providing a substantially rigid substrate.

17. The method of claim 14 wherein depositing a first electrode to overlie the substrate comprises printing a first electrode.

18. The method of claim 17 wherein printing a first electrode comprises contact printing a first electrode.

19. The method of claim 18 wherein contact printing a first electrode includes one of stenciling, screen-printing, flexography, stamping, and micro-contact.

20. The method of claim 17 wherein printing a first electrode comprises non-contact printing a first electrode.

21. The method of claim 20 wherein non-contact printing a first electrode includes one of ink jet printing, micro-dispensing, electrostatic printing, and laser transfer printing a first electrode.

22. The method of claim 17 wherein printing a first electrode comprises printing one of a conductive metal, a conductive polymer, a conductive polymer thick film, and a conductive nano-particles filled ink.

23. The method of claim 17 wherein printing a first electrode comprises printing a polymer thick film that includes small particles of a conductive metal.

24. The method of claim 23 and further comprising curing the polymer thick film.