Method of manufacturing semiconductor device and semiconductor device
First Claim
1. A method of manufacturing a semiconductor device comprising the steps of:
- adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystal line semiconductor film;
forming an impurity region to which a noble gas element is added in the crystalline semiconductor film; and
segregating the metal element in the impurity region by a second heat treatment.
1 Assignment
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Accused Products
Abstract
Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.
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Citations
75 Claims
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1. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystal line semiconductor film;
forming an impurity region to which a noble gas element is added in the crystalline semiconductor film; and
segregating the metal element in the impurity region by a second heat treatment. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
irradiating the crystalline semiconductor film with laser light to improve crystallinity;
forming an impurity region to which a noble gas element is added in the crystalline semiconductor film; and
segregating the metal element in the impurity region by a second heat treatment. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
forming an impurity region to which a noble gas element is added in the crystalline semiconductor film; and
segregating the metal element in the impurity region by a second heat treatment; and
removing the impurity region by etching. - View Dependent Claims (13, 14, 15, 16)
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17. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
irradiating the crystalline semiconductor film with laser light to improve crystallinity;
forming an impurity region to which a noble gas element is added in the crystalline semiconductor film; and
segregating the metal element in the impurity region by a second heat treatment; and
removing the impurity region by etching. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
forming a mask insulating film having an opening on the crystalline semiconductor film;
forming an impurity region to which an ion of a noble gas element accelerated by an electric field is added, through the opening in the crystalline semiconductor film and segregating the metal element in the impurity region by a second heat treatment. - View Dependent Claims (24, 25, 26, 27)
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28. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
irradiating the crystalline semiconductor film with laser light to improve crystallinity;
forming a mask insulating film having an opening on the crystalline semiconductor film;
forming an impurity region to which an ion of a noble gas element accelerated by an electric field is added, through the opening in the crystalline semiconductor film; and
segregating the metal element in the impurity region by a second heat treatment. - View Dependent Claims (29, 30, 31, 32, 33)
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34. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
forming a mask insulating film having an opening on the crystalline semiconductor film;
forming an impurity region to which an ion of a noble gas element accelerated by an electric field is added, through the opening in the crystalline semiconductor film segregating the metal element in the impurity region by a second heat treatment; and
removing the impurity region by etching. - View Dependent Claims (35, 36, 37, 38)
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39. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
irradiating the crystalline semiconductor film with laser light to improve crystallinity;
forming a mask insulating film having an opening on the crystalline semiconductor film;
forming an impurity region to which an ion of a noble gas element accelerated by an electric field is added, through the opening in the crystalline semiconductor film;
segregating the metal element in the impurity region by a second heat treatment; and
removing the impurity region by etching. - View Dependent Claims (40, 41, 42, 43, 44)
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45. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
forming an island-like divided semiconductor region by etching the crystalline semiconductor film;
forming a gate insulating film and a gate electrode corresponding to the semiconductor region;
forming in the semiconductor region an impurity region to which a one conductivity type impurity element and a noble gas element are added; and
segregating the metal element in the impurity region by a second heat treatment. - View Dependent Claims (46, 47, 48, 49)
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50. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
irradiating the crystalline semiconductor film with laser light to improve crystallinity;
forming an island-like divided semiconductor region by etching the crystalline semiconductor film;
forming a gate insulating film and a gate electrode corresponding to the semiconductor region;
forming in the semiconductor region an impurity region to which a one conductivity type impurity element and a noble gas element are added; and
segregating the metal element in the impurity region by a second heat treatment. - View Dependent Claims (51, 52, 53, 54)
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55. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
forming an island-like divided semiconductor region by etching the crystalline semiconductor film;
forming a gate insulating film and a gate electrode corresponding to the semiconductor region;
forming in the semiconductor region a first impurity region to which a one conductivity type impurity element is added and a second impurity region to which a one conductivity type impurity element and a noble gas element are added; and
segregating the metal element in the second impurity region by a second heat treatment. - View Dependent Claims (56, 57, 58, 59)
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60. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
irradiating the crystalline semiconductor film with laser light to improve crystallinity;
forming an island-like divided semiconductor region by etching the crystalline semiconductor film;
forming a gate insulating film and a gate electrode corresponding to the semiconductor region;
forming in the semiconductor region a first impurity region to which a One conductivity type impurity element is added and a second impurity region to which a one conductivity type impurity element and a noble gas element are added; and
segregating the metal element in the second impurity region by a second heat treatment. - View Dependent Claims (61, 62, 63, 64, 65)
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66. A semiconductor device comprising:
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a crystalline semiconductor film;
a gate insulating film adjacent to the crystalline semiconductor film; and
a gate electrode adjacent to the gate insulating film, wherein the crystalline semiconductor film comprises a channel forming region and an impurity region adjacent to the channel forming region, wherein the impurity region is added with a one conductivity type impurity element and a noble gas element. - View Dependent Claims (67)
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68. A semiconductor device comprising:
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a crystalline semiconductor film;
a gate insulating film adjacent to the crystalline semiconductor film; and
a gate electrode adjacent to the gate insulating film, wherein the crystalline semiconductor film comprises a channel forming region a first impurity region added a one conductivity type impurity element adjacent to the channel forming region, and a second impurity region added the one conductivity type impurity element and a noble gas element. - View Dependent Claims (69)
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70. A semiconductor device comprising:
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a crystalline semiconductor film added a metal element to a semiconductor film having an amorphous;
a gate insulating film adjacent to the crystalline semiconductor film; and
a gate electrode adjacent to the gate insulating film, wherein the crystalline semiconductor film comprises a channel forming region and an impurity region added a one conductivity type impurity element adjacent to the channel forming region, wherein the impurity region comprises a noble gas element and the metal element at a higher concentration than the channel forming region. - View Dependent Claims (71, 72)
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73. A semiconductor device comprising:
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a crystalline semiconductor film added a metal element to a semiconductor film having an amorphous;
a gate insulating film adjacent to the crystalline semiconductor film; and
a gate electrode adjacent to the gate insulating film, wherein the crystalline semiconductor film comprises a channel forming region, a first impurity region added a one conductivity type impurity element adjacent to the channel forming region, and a second impurity region added the one conductivity type impurity element and a noble gas element, and wherein the second impurity region comprises the metal element at a higher concentration than the channel forming region. - View Dependent Claims (74, 75)
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Specification