Inductor with an enclosed magnetic flux pattern and method of manufacturing the same

• US 20030122648A1
• Filed: 09/16/2002
• Published: 07/03/2003
• Est. Priority Date: 12/28/2001
• Status: Abandoned Application

• Current Assignee: Winbond Electronics Corporation
• Original Assignee: Winbond Electronics Corporation
• Inventors: Ou, Chiung-Ting, Lin, Yu-Chen
• Application Number:
  US10/244,248
• Publication Number:
  US 20030122648A1
• Time in Patent Office: Days
• US Class Current: 336/200
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 17/0033 with the coil helically wound around a magnetic core
• CPC Class Codes: H01F 2017/008 Electric or magnetic shielding of printed inductances
• CPC Class Codes: H01F 27/36 Electric or magnetic shields or screens movable for varying inductance H01F21/10
• CPC Class Codes: H01F 27/363 made of electrically conductive material
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An inductor with an enclosed magnetic flux pattern. The inductor includes a semiconductor substrate; a first mask pattern formed on the semiconductor substrate; an inductor coil formed on the first mask pattern; and a second mask pattern formed on the inductor coil and connected to the first mask pattern through a plurality of plugs, such that an enclosed magnetic flux pattern is formed around the inductor coil.

Claims

1. An inductor with an enclosed magnetic flux pattern, comprising:

a semiconductor substrate;

a first mask pattern formed on the semiconductor substrate;

an inductor coil formed on the first mask pattern; and

a second mask pattern formed on the inductor coil and connected to the first mask pattern through a plurality of plugs, such that an enclosed magnetic flux pattern is formed around the inductor coil.

2. The inductor as recited in claim 1, wherein the semiconductor substrate is a silicon substrate.

3. The inductor as recited in claim 1, wherein the first mask pattern is polycrystalline silicon.

4. The inductor as recited in claim 3, wherein the first mask pattern comprises a “

+ type”

conductive line and four regions divided by the “

+ type”

conductive line, wherein each region comprises “

L type”

conductive lines disposed side by side.

5. The inductor as recited in claim 4, wherein the first mask pattern is formed by patterning the polycrystalline silicon to form “

L type”

patterns.

6. The inductor as recited in claim 1, further comprising a first dielectric layer formed on the first mask pattern.

7. The inductor as recited in claim 6, wherein the inductor coil is formed on the first dielectric layer.

8. The inductor as recited in claim 7, wherein the inductor coil is a spiral type inductor coil formed by a plurality of metal layers.

9. The inductor as recited in claim 1, further comprising a second dielectric layer formed on the inductor coil.

10. The inductor as recited in claim 9, wherein the second mask pattern is formed on the second dielectric layer.

11. The inductor as recited in claim 1, wherein the second mask pattern is metal.

12. The inductor as recited in claim 11, wherein the second mask pattern comprises a “

+ type”

conductive line and four regions divided by the “

+ type”

conductive line, wherein each region comprises “

L type”

conductive lines disposed side by side.

13. The inductor as recited in claim 12, wherein the second mask pattern is formed by patterning the polycrystalline silicon to form “

L type”

patterns.

14. A method of manufacturing an inductor with an enclosed magnetic flux pattern comprising the steps of:

providing a semiconductor substrate;

forming a first mask pattern on the semiconductor substrate;

forming an inductor coil on the first mask pattern; and

forming a second mask pattern on the inductor coil and connecting the second mask pattern to the first mask pattern through a plurality of plugs, such that an enclosed magnetic flux pattern is formed around the inductor coil.

15. The method as recited in claim 14, wherein the semiconductor substrate is a silicon substrate.

16. The method as recited in claim 14, wherein the formation of the first mask pattern further comprises the steps of:

providing a polycrystalline silicon layer; and

patterning the polycrystalline silicon layer to form “

L type”

patterns, such that a “

+ type”

conductive line and four regions divided by the “

+ type”

conductive line are formed, and each region comprises “

L type”

conductive lines disposed side by side.

17. The method as recited in claim 14, further comprising the step of forming a first dielectric layer on the first mask pattern.

18. The method as recited in claim 14, wherein the formation of the inductor coil further comprises the steps of:

forming a plurality of metal layers on the first dielectric layer;

patterning the metal layers to form a plurality of spiral patterns; and

connecting the spiral patterns to form the inductor coil.

19. The method as recited in claim 18, wherein the spiral patterns are connected with each other by a plurality of plugs.

20. The method as recited in claim 14, further comprising the step of forming a second dielectric layer on the inductor coil.

21. The method as recited in claim 14, wherein the formation of the inductor coil further comprises the steps of:

providing a metal layer; and

patterning the metal layer to form “

L type”

patterns, such that a “

+ type”

conductive line and four regions divided by the “

+ type”

conductive line are formed, and each region comprises “

L type”

conductive lines disposed side by side.