Deposition of tungsten for the formation of conformal tungsten silicide
First Claim
1. A method of forming an electrode for a three-dimensional capacitor structure, comprising:
- depositing a polysilicon layer over a structure;
depositing a tungsten layer over the polysilicon layer by cyclical deposition; and
annealing the tungsten layer to form a tungsten silicide layer from the polysilicon layer and the tungsten layer.
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Accused Products
Abstract
A method and apparatus of depositing a tungsten film by cyclical deposition in the formation of tungsten silicide for use in capacitor structures is provided. One embodiment of forming an electrode for a capacitor structure comprises depositing a polysilicon layer over a structure and depositing a tungsten layer over the polysilicon layer by cyclical deposition. The tungsten layer is annealed to form a tungsten silicide layer from the polysilicon layer and the tungsten layer. The tungsten silicide layer acts as one electrode in the capacitor structure. In one aspect, the tungsten silicide layer may be used to form three-dimensional capacitor structures, such as trench capacitors, crown capacitors, and other types of capacitors. In another aspect, the tungsten silicide layer may be used to form capacitor structures which comprise a hemi-spherical silicon grain layer or a rough polysilicon layer.
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Citations
37 Claims
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1. A method of forming an electrode for a three-dimensional capacitor structure, comprising:
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depositing a polysilicon layer over a structure;
depositing a tungsten layer over the polysilicon layer by cyclical deposition; and
annealing the tungsten layer to form a tungsten silicide layer from the polysilicon layer and the tungsten layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a capacitor structure, comprising:
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forming a rough polysilicon surface;
depositing a high dielectric constant material layer over the rough polysilicon surface;
depositing a polysilicon layer over the high dielectric constant material layer;
depositing a tungsten layer over the polysilicon layer by cyclical deposition; and
annealing the tungsten layer to form a tungsten silicide layer from the polysilicon layer and the tungsten layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A three-dimensional capacitor, comprising:
a conformal tungsten silicide layer formed over a structure having an opening of about 0.15 μ
m or less.- View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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30. A three-dimensional capacitor, comprising:
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a rough polysilicon layer;
a high dielectric constant material layer formed over the rough polysilicon layer; and
a conformal tungsten silicide layer formed over the high dielectric constant material layer. - View Dependent Claims (31, 32, 33)
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34. A system for processing a substrate, comprising:
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a first chamber adapted to deposit a polysilicon layer;
a second chamber adapted to deposit a tungsten layer by cyclical deposition over the polysilicon layer; and
a third chamber adapted to anneal the tungsten layer. - View Dependent Claims (35, 36, 37)
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Specification