×

Organic metal precursor for use in forming metal containing patterned films

  • US 20030124457A1
  • Filed: 10/29/2002
  • Published: 07/03/2003
  • Est. Priority Date: 12/28/2001
  • Status: Active Grant
First Claim
Patent Images

1. An organic metal precursor represented by the formula (I):

  • MmLnL′

    oXp



    (I) wherein, M is a transition metal atom selected from the group consisting of Ag, Au, Co, Cu, Pd, Ni, Pt, Zn and Cd;

    L is a thioether represented by the formula (II) or (III);

    wherein in formula (II), each of R1 and R2, independently, is a C1-20 straight-chain, branched-chain or cyclic alkyl, alkenyl or alkynyl group, or an allyl group;

    in the formula (III), each of R3 and R4, independently, is a hydrogen atom, or a C1-15 straight-chain or branched-chain alkyl group, and y is an integer from 2 to 10;

    L′

    is a ligand selected from the group consisting of amines, thiols, selenols and phosphines;

    X is an anion selected from the group consisting of halogeno, hydroxide (OH

    ), cyanide (CN

    ), nitroxyl (NO

    ), nitrite (NO2

    ), nitrate (NO3

    ), azide (N3

    ), thiocyanato, isothiocyanato, tetraalkylborate, tetrahaloborate, hexafluorophosphate (PF6

    ), triflate (CF3SO3

    ), tosylate (Ts

    ), sulfate (SO42−

    ), and carbonate (CO32−

    );

    each of m and n, independently, is an integer of from 1 to 10; and

    each of o and p, independently, is an integer of from 0 to 10.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×