Film formation apparatus and film formation method and cleaning method
First Claim
1. A film formation apparatus for forming a film over a substrate by depositing an organic compound material from a deposition source provided opposite to the substrate, said film formation apparatus comprising:
- a film formation chamber to provide said substrate therein;
a deposition source provided in said film formation chamber;
a means provided in said film formation chamber for heating the deposition source;
a heating means provided in said film formation chamber for heating a mask; and
a vacuum gas discharge treatment chamber for vacuum evacuating the film formation chamber, wherein the film formation chamber is connected with the vacuum gas discharge treatment chamber.
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Abstract
The purpose of the invention is to provide a film formation apparatus capable of forming an EL layer with a high purity and a high density, and a cleaning method. The invention is a formation of an EL layer with a high density by heating a substrate 10 by a heating means for heating a substrate, decreasing the pressure of a film formation chamber with a pressure decreasing means (a vacuum pump such as a turbo-molecular pump, a dry pump, or a cryopump) connected to the film formation chamber to 5×10−3 Torr (0.665 Pa) or lower, preferably 1×10−3 Torr (0.133 Pa) or lower, and carrying out film formation by depositing organic compound materials from deposition sources. In the film formation chamber, cleaning of deposition masks is carried out by plasma.
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Citations
37 Claims
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1. A film formation apparatus for forming a film over a substrate by depositing an organic compound material from a deposition source provided opposite to the substrate, said film formation apparatus comprising:
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a film formation chamber to provide said substrate therein;
a deposition source provided in said film formation chamber;
a means provided in said film formation chamber for heating the deposition source;
a heating means provided in said film formation chamber for heating a mask; and
a vacuum gas discharge treatment chamber for vacuum evacuating the film formation chamber, wherein the film formation chamber is connected with the vacuum gas discharge treatment chamber. - View Dependent Claims (2, 3, 4, 5)
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6. A film formation apparatus for forming a film over a substrate by depositing an organic compound material from a deposition source provided opposite to the substrate, said film formation apparatus comprising;
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a film formation chamber to provide said substrate therein, an adhesion prevention means provided in said film formation chamber for preventing film formation in the inner wall;
a heating means provided in said film formation chamber for heating the adhesion prevention means;
the deposition source provided in said film formation chamber, a means provided in said film formation chamber for heating the deposition source; and
a heating means provided in said film formation chamber for heating a mask; and
a vacuum gas discharge treatment chamber for vacuum evacuating the film formation chamber, wherein the film formation chamber is connected with said vacuum gas discharge treatment chamber. - View Dependent Claims (7, 8, 9, 10, 11, 25)
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12. A film formation apparatus comprising:
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a load chamber, a transportation chamber, and a film formation chamber joined to each other in series, wherein said film formation chamber has a function of conforming the positioning of a mask and a substrate and said film formation chamber is connected with a vacuum gas discharge treatment chamber for vacuum evacuating the film formation chamber and comprises an adhesion prevention means for preventing film formation in the inner wall, a heating means for heating the adhesion prevention means, the deposition source, a means for heating the deposition source, and a heating means for heating a mask. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A film formation apparatus comprising:
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a load chamber;
a transportation chamber connected with said load chamber; and
a film formation chamber connected with said transportation chamber, wherein said transportation chamber has a function of conforming the positioning of a mask and a substrate and said film formation chamber is connected with a vacuum gas discharge treatment chamber for vacuum evacuating the film formation chamber and said film formation chamber comprises an adhesion prevention means for preventing film formation in the inner wall, a heating means for heating the adhesion prevention means, the deposition source, a means for heating the deposition source, and a heating means for heating a mask. - View Dependent Claims (19, 20, 21, 22, 23)
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24. A film formation apparatus for forming a film over a substrate by depositing an organic compound material from a deposition source provided opposite to the substrate, said film formation apparatus comprising:
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a film formation chamber to provide said substrate therein, a deposition source provided in said film formation chamber;
a means provided in said film formation chamber for heating the deposition source;
a heating means provided in said film formation chamber for heating a substrate;
a mask provided in said film formation chamber, and an electrode provided in said film formation chamber and opposite to the mask; and
a vacuum gas discharge treatment chamber for vacuum evacuating the film formation chamber, wherein the film formation chamber is connected with the vacuum gas discharge treatment chamber and plasma is generated in the film formation chamber.
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26. A film formation apparatus for forming a film over a substrate by depositing an organic compound material from a deposition source provided opposite to the substrate, said film formation apparatus comprising:
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a film formation chamber to provide said substrate therein;
a deposition source provided in said film formation chamber;
a means provided in said film formation chamber for heating the deposition source;
a heating means provided in said film formation chamber for heating a substrate; and
a vacuum gas discharge treatment chamber for vacuum evacuating the film formation chamber, wherein the film formation chamber is connected with the vacuum gas discharge treatment chamber and also with a cleaning preparatory chamber for radiating laser beam to the inner wall of said treatment chamber. - View Dependent Claims (27)
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28. A film formation method for depositing an organic compound over a substrate provided in a film formation chamber;
- wherein said film formation chamber is kept in a high vacuum degree of 1×
10−
3 Torr or lower pressure, and in the case of forming a film by depositing an organic compound material over the substrate from a deposition source provided opposite to the substrate, said substrate is simultaneously heated to decrease a gas in the film. - View Dependent Claims (29)
- wherein said film formation chamber is kept in a high vacuum degree of 1×
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30. A film formation method for depositing an organic compound over a substrate provided in a film formation chamber;
- wherein said film formation chamber is kept in a high vacuum degree of 1×
10−
3 Torr or lower pressure, and after formation of a film by depositing an organic compound material over the substrate from a deposition source provided opposite to the substrate, the vacuum degree is increased further than that during the film formation while said substrate is kept from atmospheric air, and said substrate is heated to decrease a gas in the film. - View Dependent Claims (31, 32, 33)
- wherein said film formation chamber is kept in a high vacuum degree of 1×
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34. A film formation method for depositing an organic compound over a substrate provided in a film formation chamber;
- wherein after formation of a first organic compound layer over the substrate, said film formation chamber is kept in a high vacuum degree of 1×
10−
3 Torr or lower pressure, and before film formation of a second organic compound layer over said first organic compound layer by depositing an organic compound material over the substrate from a deposition source provided opposite to the substrate, the substrate is heated to decrease the gas in the first organic compound layer.
- wherein after formation of a first organic compound layer over the substrate, said film formation chamber is kept in a high vacuum degree of 1×
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35. A cleaning method for removing an organic compound adhering to a film formation chamber provided with a deposition source, said method comprising:
cleaning a mask or an inner wall or an adhesion prevention means for preventing film formation on the inner wall by generating plasma in the film formation chamber. - View Dependent Claims (36, 37)
Specification