Dual-gas delivery system for chemical vapor deposition processes
First Claim
1. A gas delivery system, comprising:
- a gas box comprising a first gas channel having a first outlet and a second gas channel having a second gas outlet;
a blocker plate disposed below the gas box, the blocker plate having a plurality of blocker plate holes;
a showerhead disposed below the blocker plate, the showerhead comprising columns having column holes in communication with a top surface and a bottom surface of the showerhead and interconnected grooves having groove holes in communication with the bottom surface of the showerhead;
the first outlet of the gas box adapted to supply a first gas through the blocker plate holes of the blocker plate to the column holes of the showerhead; and
the second gas outlet of the gas box being coupled to the showerhead and adapted to supply a second gas through the interconnect grooves of the showerhead to the groove holes of the showerhead.
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Accused Products
Abstract
Embodiments of the present invention generally relate to an apparatus and method for delivering two separate gas flows to a processing region. One embodiment of a substrate processing chamber adapted to deliver two separate gas flows to a processing region comprises a substrate support having a substrate receiving surface and a showerhead disposed over the substrate receiving surface. The showerhead includes a first passageway having a plurality of first passageway holes and a second passageway having a plurality of second passageway holes. The first passageway is adapted to deliver a first gas flow through the first passageway holes to the substrate receiving surface. The second passageway is adapted to deliver a second gas flow through the second passageway holes to the substrate receiving surface. The substrate processing chamber further includes a plasma power source. The plasma power source may be in electrical communication with the showerhead or with the substrate support to generate a plasma from gases between the showerhead and the substrate support. One embodiment of a method of delivering two separate gas flows to a processing region comprises performing one or more of processes from the group including forming a titanium layer by plasma enhanced chemical vapor deposition, forming a passivation layer by a nitrogen plasma treatment of a titanium layer, forming a composite titanium/titanium nitride layer by an alternating plasma enhanced chemical vapor deposition and a nitrogen plasma treatment, forming a titanium nitride layer by thermal chemical vapor deposition, and plasma treating a titanium nitride layer.
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Citations
59 Claims
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1. A gas delivery system, comprising:
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a gas box comprising a first gas channel having a first outlet and a second gas channel having a second gas outlet;
a blocker plate disposed below the gas box, the blocker plate having a plurality of blocker plate holes;
a showerhead disposed below the blocker plate, the showerhead comprising columns having column holes in communication with a top surface and a bottom surface of the showerhead and interconnected grooves having groove holes in communication with the bottom surface of the showerhead;
the first outlet of the gas box adapted to supply a first gas through the blocker plate holes of the blocker plate to the column holes of the showerhead; and
the second gas outlet of the gas box being coupled to the showerhead and adapted to supply a second gas through the interconnect grooves of the showerhead to the groove holes of the showerhead. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A substrate processing chamber, comprising:
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a substrate support having a substrate receiving surface;
a showerhead disposed over the substrate receiving surface, the showerhead comprising a first passageway having a plurality of first passageway holes and a second passageway having a plurality of second passageway holes, the first passageway adapted to deliver a first gas flow through the first passageway holes to the substrate receiving surface and a second passageway adapted to deliver a second gas flow through the second passageway holes to the substrate receiving surface; and
a plasma power source. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of processing a substrate in a single chamber, comprising:
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forming a titanium layer over a substrate structure by plasma enhanced chemical vapor deposition; and
capping the titanium layer by a nitrogen plasma treatment of the titanium layer. - View Dependent Claims (29, 30, 31, 32, 33, 34)
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35. A method of forming a composite titanium/titanium nitride layer over a substrate structure in a single chamber, comprising performing a plurality of process cycles, the process cycle comprising:
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depositing a titanium layer by plasma enhanced chemical vapor deposition; and
treating the titanium layer with a nitrogen plasma treatment. - View Dependent Claims (36, 37, 38, 39, 40, 41)
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42. A method of processing a substrate in a single chamber, comprising:
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forming a titanium nitride layer by chemical vapor deposition, and treating the titanium nitride layer with a nitrogen plasma. - View Dependent Claims (43, 44, 45, 46, 47)
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48. A method of processing a substrate in a single chamber, comprising:
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forming a titanium layer over a substrate structure by plasma enhanced chemical vapor deposition, and forming a titanium nitride layer over the titanium layer by chemical vapor deposition. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
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Specification