Method for fabricating a metal-oxide electron tunneling device for solar energy conversion

• US 20030127641A1
• Filed: 01/20/2003
• Published: 07/10/2003
• Est. Priority Date: 05/21/2001
• Status: Active Grant

• Current Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Original Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Inventors: Moddel, Garret, Eliasson, Blake J.
• Granted Patent: US 6,762,071 B2
• Time in Patent Office: Days
• US Class Current: 257/25
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/06 characterised by potential barriers
• CPC Class Codes: H01L 31/101 Devices sensitive to infrared, visible or ultraviolet radiation
• CPC Class Codes: H10N 70/00 Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching integrated devices or assemblies of multiple devices H10N79/00
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A method for fabricating an electron tunneling device on a substrate includes forming a first non-insulating layer on the substrate and providing a first amorphous layer. The method further includes the steps of providing a second layer, and forming a second non-insulating layer and providing an antenna structure connected with the first and second non-insulating layers. The second layer of material is configured to cooperate with the first amorphous layer such that the first amorphous layer and the second layer of material together serve as a transport of electrons between and to the first and second non-insulating layers, and the transport of electrons includes, at least in part, transport by means of tunneling.

Claims

1. A method for fabricating an electron tunneling device on a substrate, said method comprising:

a) forming a first non-insulating layer on the substrate;

b) providing a first amorphous layer;

c) providing a second layer;

d) forming a second non-insulating layer; and

e) providing an antenna structure connected with said first and second non-insulating layers, wherein said second layer of material is configured to cooperate with said first amorphous layer such that the first amorphous layer and the second layer of material together serve as a transport of electrons between and to the first and second non- insulating layers, and wherein said transport of electrons includes, at least in part, transport by means of tunneling.

2. The method of claim 1 wherein said step of forming said first non-insulating layer includes the step of defining said predetermined shape by lithography.

3. The method of claim 2 wherein said step of forming said first non-insulating layer further includes the steps of:

i) depositing a bond layer of a first non-insulating material;

ii) depositing a contact layer of a different, second non-insulating material; and

iii) lifting off of excess first and second non-insulating materials, wherein said first non-insulating material is selected such that the second non-insulating material more readily adheres to the bond layer than directly to the substrate.

4. The method of claim 1 wherein said step of providing said first amorphous layer includes the step of forming said first amorphous layer using a material selected from the group consisting of silicon dioxide, niobium oxide, titanium oxide, aluminum oxide, zirconium oxide, tantalum oxide, hafnium oxide, yttrium oxide, magnesium oxide, silicon nitride and aluminum nitride.

5. The method of claim 1 wherein said step of providing said first amorphous layer includes the step of oxidizing the first non-insulating layer such that an oxide layer is integrally formed in the first non-insulating layer, wherein said oxide layer serves as said first amorphous layer.

6. The method of claim 1 wherein said step of providing said first amorphous layer includes the step of depositing said first amorphous layer by atomic layer deposition.

7. The method of claim 1 wherein said step of providing said first amorphous layer includes the step of depositing said first amorphous layer by sputtering.

8. The method of claim 1 wherein said step of providing said first amorphous layer includes the step of depositing said first amorphous layer by spin-on deposition.

9. The method of claim 1 wherein said step of providing said second layer includes the step of depositing said second layer by atomic layer deposition.

10. The method of claim 1 wherein said step of providing said second layer includes the step of depositing said second layer by sputtering.

11. The method of claim 1 wherein said step of providing said second layer includes the step of depositing said second layer by spin-on deposition.

12. The method of claim 1 wherein said step of providing said antenna structure includes the step of configuring said first and second non-insulating layers to integrally form said antenna structure.