Termination structure for a semiconductor device
First Claim
1. A semiconductor device comprising active and termination regions formed in a semiconductor substrate having an upper surface, a termination including a trench extending into the substrate from said upper surface within said termination region, wherein said termination trench is at least partly filled with an insulating material which extends from the termination trench to overlie adjacent regions of the device above said surface, and wherein a channel stop region extends laterally from a side wall of the termination trench into the substrate.
3 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device (e.g. MOSFET or IGBT) comprises active and termination regions (1,2) formed in a semiconductor substrate (4). The substrate (4) has an upper surface and a termination including a trench (12) extending into the substrate (4) from the upper surface within the termination region (1). Termination trench (12) is at least partly filled with an insulating material (13) which extends from the termination trench (12) to overlie adjacent regions of the device above the surface. A channel stop region (11) extends laterally from a side wall of the termination trench (12) into the substrate (4).
41 Citations
25 Claims
- 1. A semiconductor device comprising active and termination regions formed in a semiconductor substrate having an upper surface, a termination including a trench extending into the substrate from said upper surface within said termination region, wherein said termination trench is at least partly filled with an insulating material which extends from the termination trench to overlie adjacent regions of the device above said surface, and wherein a channel stop region extends laterally from a side wall of the termination trench into the substrate.
Specification