Current-perpendicular-to-the-plane structure magnetoresistive head

• US 20030128481A1
• Filed: 12/19/2002
• Published: 07/10/2003
• Est. Priority Date: 01/10/2002
• Status: Abandoned Application

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Tanaka, Atsushi, Oshima, Hirotaka, Shimizu, Yutaka, Nagasaka, Keiichi, Seyama, Yoshihiko
• Application Number:
  US10/326,761
• Publication Number:
  US 20030128481A1
• Time in Patent Office: Days
• US Class Current: 360/324.1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: H01F 10/324 Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer

Abstract

A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes a spin valve film. A boundary is defined between electrically-conductive layers included in a non-magnetic intermediate layer in the spin valve film. A magnetic metallic material and an insulating material exist on the boundary. The insulating material serves to reduce the sectional area of the path for the sensing electric current. The CPP structure magnetoresistive element realizes a larger variation in the electric resistance in response to the rotation of the magnetization in the free magnetic layer. A sensing electric current of a smaller level is still employed to obtain a sufficient variation in the voltage. Accordingly, the CPP structure magnetoresistive element greatly contributes to a further improvement in the recording density and reduction in the electric consumption.

Claims

1. A current-perpendicular-to-the-plane structure magnetoresistive element comprising:

a free magnetic layer;

a pinned magnetic layer;

a non-magnetic intermediate layer interposed between the free and pinned magnetic layers, said non-magnetic intermediate layer including a plurality of electrically-conductive layers; and

an insulating material existing on a boundary defined between at least a pair of the electrically-conductive layers.

2. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 1, wherein said insulating material is a metal oxide.

3. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 2, wherein a metallic material exists on the boundary along with the metal oxide.

4. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 2, wherein said metal oxide includes magnetic metal atoms.

5. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 4, wherein a magnetic metallic material exists on the boundary along with the metal oxide.

6. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 4, wherein said magnetic metal atoms are any of Fe, Co and Ni.

7. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 6, wherein said metal oxide is an oxide of CoFe alloy.

8. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 7, wherein CoFe alloy exists on the boundary along with the oxide.

9. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 1, wherein said insulating material is a metal nitride.

10. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 9, wherein said metal nitride includes magnetic metal atoms.

11. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 10, wherein said magnetic metal atoms are any of Fe, Co and Ni.

12. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 11, wherein said metal nitride is a nitride of CoFe alloy.

13. A current-perpendicular-to-the-plane structure magnetoresistive element comprising:

a free magnetic layer;

a pinned magnetic layer;

a non-magnetic intermediate layer interposed between the free and pinned magnetic layers; and

an insulating material existing on a boundary defined on the non-magnetic intermediate layer.

14. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 13, wherein said insulating material is a metal oxide.

15. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 14, wherein a metallic material exists on the boundary along with the metal oxide.

16. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 14, wherein said metal oxide includes magnetic metal atoms.

17. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 16, wherein a magnetic metallic material exists on the boundary along with the metal oxide.

18. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 16, wherein said magnetic metal atoms are any of Fe, Co and Ni.

19. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 18, wherein said metal oxide is an oxide of CoFe alloy.

20. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 19, wherein CoFe alloy exists on the boundary along with the oxide.

21. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 13, wherein said insulating material is a metal nitride.

22. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 21, wherein said metal nitride includes magnetic metal atoms.

23. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 22, wherein said magnetic metal atoms are any of Fe, Co and Ni.

24. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 23, wherein said metal nitride is a nitride of CoFe alloy.

25. A current-perpendicular-to-the-plane structure magnetoresistive element comprising:

a free magnetic layer;

a pinned magnetic layer;

an electrically-conductive non-magnetic intermediate layer interposed between the free and pinned magnetic layers; and

a magnetic metal existing on a boundary defined on the electrically-conductive non-magnetic intermediate layer.

26. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 25, wherein an insulating material exists on the boundary along with the magnetic metal.

27. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 26, wherein said magnetic metal includes any of Fe, Co and Ni.

28. The current-perpendicular-to-the-plane structure magnetoresistive element according to claim 27, wherein said magnetic metal is CoFe alloy.