Semiconductor processing using an efficiently coupled gas source

• US 20030129106A1
• Filed: 08/29/2002
• Published: 07/10/2003
• Est. Priority Date: 08/29/2001
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Shang, Quanyuan, White, John M., Blonigan, Wendell T., Sorensen, Carl A., Ellingboe, Albert R.
• Application Number:
  US10/231,867
• Publication Number:
  US 20030129106A1
• Time in Patent Office: Days
• US Class Current: 422/186.05
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts

Abstract

A semiconductor processing system includes a processing chamber system and an activated gas source coupled to the chamber system. The gas source includes a primary winding coupled to an RF generator and a secondary winding effectively formed by the conductance of a plasma filled passageway in a toroidal chamber. The primary winding and the secondary winding are coaxially aligned to provide a suitable inductive coupling between the windings.

Claims

1. A gas source for use with a semiconductor processing chamber, comprising:

a primary winding having at least one turn surrounding a central axis; and

a toroidal shaped plasma generation chamber, the chamber comprising;

a passageway surrounding the central axis,

a gas inlet fluidly coupled to the passageway, and

a gas outlet fluidly coupled to the passageway;

wherein a plasma generated in said passageway of the toroidal shaped plasma chamber functions as a secondary winding within the chamber and surrounding said central axis, the secondary winding being inductively coupled to the primary winding.

2. The gas source of claim 1, wherein the toroidal shaped plasma generation chamber has a wall formed of a conductive material.

3. The gas source of claim 2, wherein the conductive wall includes first and second wall portions, the toroidal shaped plasma generation chamber having a dielectric spacer disposed between the first and second wall portions and electrically isolating the first and second wall portions from one another.

4. The gas source of claim 1, wherein the toroidal shaped plasma generation chamber defines an aperture through which the central axis passes, and wherein the primary winding has at least one turn disposed within the aperture so that the chamber completely surrounds the at least one turn of the primary winding.

5. The gas source of claim 1, wherein the primary winding defines an aperture through which the central axis passes, and wherein the toroidal shaped plasma generation chamber is disposed within the aperture so that primary winding completely surrounds the toroidal shaped plasma generation chamber.

6. The gas source of claim 1, wherein the primary winding and the toroidal shaped plasma generation chamber passageway are coaxially aligned along the central axis.