Light emitting apparatus and method for manufacturing the same

• US 20030129790A1
• Filed: 11/08/2002
• Published: 07/10/2003
• Est. Priority Date: 11/09/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Murakami, Satoshi, Yamazaki, Shunpei, Sakakura, Masayuki
• Granted Patent: US 6,903,377 B2
• Time in Patent Office: Days
• US Class Current: 438/149
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/80524 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 71/851 Division of substrate

Abstract

The purpose of the invention is to improve reliability of a light emitting apparatus comprising a TFT and organic light emitting elements.

The light emitting apparatus according to the invention having a thin film transistor and a light emitting element, comprises; a first inorganic insulation layer on the lower surface of a semiconductor layer, a second inorganic insulation layer on the upper surface of agate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, a wiring layer extending on the third inorganic insulation layer, a second organic insulation layer overlapped with the end of the wiring layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the wiring layer, a cathode layer formed in contact with the wiring layer and having side end overlapped with the fourth inorganic insulation layer, and an organic compound layer formed in contact with the cathode layer and the fourth inorganic insulation layer and comprising light emitting material, and an anode layer formed in contact with the organic compound layer comprising the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

Claims

1. A light emitting device comprising:

a thin film transistor over an insulating surface comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a first inorganic insulation layer under the semiconductor layer;

a second inorganic insulation layer over the gate electrode;

a first organic insulation layer over the second inorganic insulation layer;

a third inorganic insulation layer over the first organic insulation layer;

a wiring layer extending over the third inorganic insulation layer;

a second organic insulation layer overlapping with an end of the wiring layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;

a fourth inorganic insulation layer formed over an upper surface and a side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the wiring layer;

a cathode layer formed over the wiring layer, the cathode layer having an end overlapping with the fourth inorganic insulation layer;

a light emitting layer comprising an organic material formed over the cathode layer and the fourth inorganic insulation layer;

an anode layer formed over the light emitting layer comprising an organic material; and

a fifth inorganic insulation layer formed over the anode layer,

wherein the light emitted from the light emitting material is visible through the fifth inorganic insulation layer and the anode, and

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

3. The light emitting device of claim 1, wherein the third inorganic insulation layer to the fifth inorganic insulation layer comprise silicon nitride formed by RF sputtering method.

5. The light emitting device of claim 1, wherein the third inorganic insulation layer to the fifth inorganic insulation layer comprise silicon nitride having etching rate of 9 nm/min or less.

7. The light emitting device of claim 1, wherein the third inorganic insulation layer to the fifth inorganic insulation layer comprise silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

9. The light emitting device of claim 1, wherein the third inorganic insulation layer to the fifth inorganic insulation layer comprise silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

2. A light emitting device comprising:

a pixel section over an insulating surface comprising a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a driving circuit section over the insulating surface comprising a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode,

a first inorganic insulation layer under the semiconductor layer;

a second inorganic insulation layer over the gate electrode;

a first organic insulation layer over the second inorganic insulation layer;

a third inorganic insulation layer over the first organic insulation layer;

a wiring layer extending over the third inorganic insulation layer;

a second organic insulation layer overlapping with an end of the wiring layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;

a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the wiring layer;

a cathode layer formed over the wiring layer, the cathode layer having an end overlapping with the fourth inorganic insulation layer;

a light emitting layer comprising an organic material formed over the cathode layer and the fourth inorganic insulation layer;

an anode layer formed over the light emitting layer comprising an organic material; and

a fifth inorganic insulation layer formed over the anode layer; and

a seal pattern over the fourth inorganic insulation layer, wherein the driving circuit section is formed in the peripheral region of the pixel section,

wherein the light emitted from the light emitting material is visible through the fifth inorganic insulation layer,

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride, and

wherein the seal pattern is overlapped with the driving circuit section.

4. The light emitting device of claim 2, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride formed by RF sputtering method.

6. The light emitting device of claim 2, wherein the third inorganic insulation layer to the fifth inorganic insulation layer comprise silicon nitride having etching rate of 9 nm/min or less.

8. The light emitting device of claim 2, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

10. The light emitting device of claim 2, wherein the third inorganic insulation layer to the fifth inorganic insulation layer comprise silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

11. A light emitting device comprising:

a thin film transistor over an insulating surface comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a first inorganic insulation layer under the semiconductor layer;

a second inorganic insulation layer over the gate electrode;

a first organic insulation layer over the second inorganic insulation layer;

a third inorganic insulation layer over the first organic insulation layer;

a wiring layer extending over the third inorganic insulation layer;

a second organic insulation layer overlapping with an end of the wiring layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;

a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the wiring layer;

a cathode layer formed over the wiring layer, the cathode layer having an end overlapping with the fourth inorganic insulation layer;

a light emitting layer comprising an organic material formed over the cathode layer and the fourth inorganic insulation layer; and

an anode layer formed over the light emitting layer comprising an organic material,

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

12. The light emitting device of claim 11, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

13. The light emitting device of claim 11, wherein the third inorganic insulation layer to the fifth inorganic insulation layer comprise silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

14. A light emitting device comprising:

a pixel section over an insulating surface comprising a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a driving circuit section over the insulating surface comprising a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a first inorganic insulation layer under the semiconductor layer;

a second inorganic insulation layer over the gate electrode;

a first organic insulation layer over the second inorganic insulation layer;

a third inorganic insulation layer over the first organic insulation layer;

a wiring layer extending over the third inorganic insulation layer;

a second organic insulation layer overlapping with an end of the wiring layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;

a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the wiring layer;

a cathode layer formed over the wiring layer, the cathode layer having an end overlapping with the fourth inorganic insulation layer;

a light emitting layer comprising an organic material formed over the cathode layer and the fourth inorganic insulation layer;

an anode layer formed over the the light emitting layer comprising an organic material; and

a seal pattern over the fourth inorganic insulation layer,

wherein the driving circuit section is formed in the peripheral region of the pixel section, and

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

15. The light emitting device according to claim 14, wherein the seal pattern is overlapped with the driving circuit section.

16. The light emitting device according to claim 14 further comprising a fifth inorganic insulation film over the anode layer.

17. The light emitting device of claim 14, wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

18. The light emitting device of claim 15, wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

19. The light emitting device of claim 16, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

20. The light emitting device of claim 14, wherein the third inorganic insulation layer and the fourth inorganic insulation layer comprise silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

21. The light emitting device of claim 15, wherein the third inorganic insulation layer and the fourth inorganic insulation layer comprise silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

22. The light emitting device of claim 16, wherein the third inorganic insulation layer to the fifth inorganic insulation layer comprise silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

23. A light emitting device comprising:

a pixel section over an insulating surface comprising;

a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a light emitting element comprising an organic compound layer comprising light emitting material between an anode layer and a cathode layer;

a driving circuit section over the insulating surface comprising a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a barrier layer formed from an organic insulation layer over the pixel section and the driving circuit section;

an inorganic insulation layer comprising silicon nitride or aluminum nitride over the upper surface and the side surface of the barrier layer; and

a seal pattern over the inorganic insulation layer,

wherein the driving circuit section is formed in the peripheral region of the pixel section,

wherein the seal pattern is overlapped with the driving circuit section, and

wherein a connection between the anode layer and the wiring formed under the anode layer is provided inside of the seal pattern.

26. The light emitting device of claim 23, wherein the inorganic insulation layer comprises silicon nitride formed by RF sputtering method.

28. The light emitting device of claim 23, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having etching rate of 9 nm/min or less.

30. The light emitting device of claim 23, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

33. The light emitting device of claim 23, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having oxygen concentration from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

24. A light emitting device comprising:

a pixel section over an insulating surface comprising;

a first thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode; and

a light emitting element comprising an organic compound layer comprising light emitting material between an anode layer and a cathode layer;

a driving circuit section over the insulating surface comprising a second thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a barrier layer formed from an organic insulation layer over the pixel section and the driving circuit section;

an inorganic insulation layer comprising silicon nitride or aluminum nitride over the upper surface and the side surface of the barrier layer; and

a seal pattern over the inorganic insulation layer,

wherein the driving circuit section is formed in the peripheral region of the pixel section,

wherein the first thin film transistor is formed inside of the seal pattern,

wherein some or all of the second thin film transistors overlap with the seal pattern, and

wherein a connection between the anode layer and the wiring formed under the anode layer is provided inside of the seal pattern.

27. The light emitting device of claim 24, wherein the inorganic insulation layer comprises silicon nitride formed by RF sputtering method.

29. The light emitting device of claim 24, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having etching rate of 9 nm/min or less.

31. The light emitting device of claim 24, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

34. The light emitting device of claim 24, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having oxygen concentration from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

25. A light emitting device comprising:

a pixel section over an insulating surface comprising;

a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a light emitting element comprising an organic compound layer comprising light emitting material between an anode layer and a cathode layer;

a driving circuit section over the insulating surface comprising a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a barrier layer formed from an organic insulation layer over the pixel section and the driving circuit section;

an inorganic insulation layer comprising silicon nitride or aluminum nitride over the upper surface and the side surface of the barrier layer; and

a seal pattern over the inorganic insulation layer,

wherein the driving circuit section is formed in the peripheral region of the pixel section, and

wherein a connection between the anode layer and the wiring formed under the anode layer is provided inside of the seal pattern.

32. The light emitting device of claim 25, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

35. The light emitting device of claim 25, wherein each of the third inorganic insulation layer to the fifth inorganic insulation layer comprises silicon nitride having oxygen concentration from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

36. A method for manufacturing a light emitting device comprising a pixel section comprising a thin film transistor comprising a semiconductor layer, a gate insulation film and a gate electrode, and a light emitting element comprising an a light emitting layer comprising an organic material between an anode layer and a cathode layer, and a driving circuit section comprising a thin film transistor comprising a semiconductor layer, a gate insulation film and a gate electrode, the driving circuit section being formed in the peripheral region of the pixel section, comprising steps of:

forming a first inorganic insulation layer over an insulating surface;

forming a semiconductor layer comprising crystalline silicon over the first inorganic insulation layer;

forming a gate insulation film over the semiconductor layer;

forming a gate electrode over the gate insulation film;

forming a second inorganic insulation layer over the gate electrode;

forming a first organic insulation layer over the second inorganic insulation layer;

forming a third inorganic insulation layer over the second organic insulation layer;

forming a wiring layer over the third inorganic insulation layer;

forming a second organic insulation layer overlapping with an end of the wiring layer, the second organic insulation layer having an inclined portion;

forming a fourth inorganic insulation layer over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the wiring layer;

forming a cathode layer over the wiring layer, the cathode layer having an end overlapping with the fourth inorganic insulation layer;

forming a light emitting layer comprising an organic material over the cathode layer and the fourth inorganic insulation layer; and

forming an anode layer over the light emitting layer comprising an organic material,

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride formed by RF sputtering method.

38. The method for manufacturing the light emitting device of the claim 36,

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises silicon nitride formed by RF sputtering method using silicon as a target, and only nitrogen as a sputtering gas.

40. The method for manufacturing the light emitting device of the claim 36,

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer is formed by sputtering using a turbo molecular pump or a cryopump, with back-pressure of 1×

10<sup>−

3</sup> Pa or less, and sputtering a single crystal silicon target with N₂ gas or mixture of N₂ and noble gas.

42. The method for manufacturing the light emitting device of the claim 36,

wherein the third inorganic insulation layer is formed after the formation of the first organic insulation layer, by heating and dehydrating under reduced pressure, while the reduced pressure is kept.

44. The method for manufacturing the light emitting device of the claim 36,

wherein the fourth inorganic insulation layer is formed after the formation of the second organic insulation layer, by heating and dehydrating under reduced pressure, while the reduced pressure is kept.

46. The method for manufacturing the light emitting device according to claim 36 further comprising a step of forming a fifth inorganic insulation layer over the anode layer after forming the anode layer.

37. A method for manufacturing a light emitting device comprising a pixel section comprising a thin film transistor comprising a semiconductor layer, a gate insulation film and a gate electrode, and a light emitting element comprising a light emitting layer comprising an organic material between an anode layer and a cathode layer, and a driving circuit section comprising a thin film transistor comprising a semiconductor layer, a gate insulation film and a gate electrode, the driving circuit section being formed in the peripheral region of the pixel section, comprising steps of:

forming a first inorganic insulation layer over an insulating surface;

forming a semiconductor layer comprising crystalline silicon over the first inorganic insulation layer;

forming a gate insulation film over the semiconductor layer and a gate electrode over the gate insulation film;

forming a second inorganic insulation layer over the gate electrode;

forming a first organic insulation layer over the second inorganic insulation layer;

forming a third inorganic insulation layer over the first organic insulation layer;

forming a wiring layer over the third inorganic insulation layer;

forming a second organic insulation layer overlapping with an end of the wiring layer, the second organic insulation layer having an inclination angle of 35 to 45 degrees;

forming a fourth inorganic insulation layer over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the wiring layer;

forming a cathode layer over the wiring layer and having an end overlapping with the fourth inorganic insulation layer;

forming a light emitting layer comprising an organic material over the cathode layer and the fourth inorganic insulation layer;

forming an anode layer over the light emitting layer comprising an organic material;

forming a seal pattern over the fourth insulation layer at a position in which the seal pattern is overlapped with the driving circuit section; and

adhering a sealing plate in alignment with the seal pattern,

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride formed by RF sputtering method.

39. The method for manufacturing the light emitting device of the claim 37,

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises silicon nitride formed by RF sputtering method using silicon as a target, and only nitrogen as a sputtering gas.

41. The method for manufacturing the light emitting device of the claim 37,

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer is formed by sputtering using a turbo molecular pump or a cryopump, with back-pressure of 1×

10<sup>−

3</sup> Pa or less, and sputtering a single crystal silicon target with N₂ gas or mixture of N₂ and noble gas.

43. The method for manufacturing the light emitting device of the claim 37,

wherein the third inorganic insulation layer is formed after the formation of the first organic insulation layer, by heating and dehydrating under reduced pressure, while the reduced pressure is kept.

45. The method for manufacturing the light emitting device of the claim 37,

wherein the fourth inorganic insulation layer is formed after the formation of the second organic insulation layer, by heating and dehydrating under reduced pressure, while the reduced pressure is kept.

47. The method for manufacturing the light emitting device according to claim 37 further comprising a step of forming a fifth inorganic insulation layer over the anode layer after forming the anode layer.

48. A light emitting device comprising:

a thin film transistor over an insulating surface comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a first inorganic insulation layer under the semiconductor layer;

a second inorganic insulation layer over the gate electrode;

a first organic insulation layer over the second inorganic insulation layer;

a third inorganic insulation layer over the first organic insulation layer;

a wiring layer extending over the third inorganic insulation layer;

a second organic insulation layer overlapping with an end of the wiring layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;

a fourth inorganic insulation layer formed over an upper surface and a side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the wiring layer; and

a light emitting element over the fourth inorganic insulation layer comprising;

a cathode layer;

an anode layer; and

a light emitting layer comprising an organic material between the cathode layer and the anode layer,

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

52. The light emitting device according to claim 48 further comprising a fifth inorganic insulation layer over the light emitting element.

56. The light emitting device according to claim 48, wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

60. The light emitting device according to claim 48, wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

64. The light emitting device according to claim 52, wherein the fifth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

66. The light emitting device according to claim 52 wherein the fifth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

68. The light emitting device according to claim 52, wherein the fifth inorganic insulation layer comprises silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

49. A light emitting device comprising:

a thin film transistor over an insulating surface comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a first inorganic insulation layer under the semiconductor layer;

a second inorganic insulation layer over the gate electrode;

a first organic insulation layer over the second inorganic insulation layer;

a third inorganic insulation layer over the first organic insulation layer;

a wiring layer extending over the third inorganic insulation layer;

a second organic insulation layer overlapping with an end of the wiring layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;

a fourth inorganic insulation layer formed over an upper surface and a side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the wiring layer;

a light emitting element over the fourth inorganic insulation layer comprising;

a cathode layer;

an anode layer; and

a light emitting layer comprising an organic material between the cathode layer and the anode layer; and

a fifth inorganic insulation layer over the light emitting element,

wherein the light emitted from the light emitting material is visible through the fifth inorganic insulation layer and the anode, and

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

57. The light emitting device according to claim 49, wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10² atoms/cm³ or less.

61. The light emitting device according to claim 49, wherein the third inorganic insulation layer and the fourth inorganic insulation layer comprise silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

50. A light emitting device comprising:

a pixel section over an insulating surface comprising a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a driving circuit section over the insulating surface comprising a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode,

a first inorganic insulation layer under the semiconductor layer;

a second inorganic insulation layer over the gate electrode;

a first organic insulation layer over the second inorganic insulation layer;

a third inorganic insulation layer over the first organic insulation layer;

a wiring layer extending over the third inorganic insulation layer;

a second organic insulation layer overlapping with an end of the wiring layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;

a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the wiring layer;

a light emitting element over the fourth inorganic insulation layer comprising;

a cathode layer;

an anode layer; and

a light emitting layer comprising an organic material between the cathode layer and the anode layer; and

a seal pattern over the fourth inorganic insulation layer,

wherein the driving circuit section is formed in the peripheral region of the pixel section, and

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

53. The light emitting device according to claim 50 further comprising a fifth inorganic insulation layer over the light emitting element.

54. The light emitting device according to claim 50, wherein the seal pattern is overlapped with the driving circuit section.

58. The light emitting device according to claim 50, wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10² atoms/cm³ or less.

62. The light emitting device according to claim 50, wherein the third inorganic insulation layer and the fourth inorganic insulation layer comprise silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

65. The light emitting device according to claim 53, wherein the fifth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

67. The light emitting device according to claim 53 wherein the fifth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10²¹ atoms/cm³ or less.

69. The light emitting device according to claim 53, wherein the fifth inorganic insulation layer comprises silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.

51. A light emitting device comprising:

a pixel section over an insulating surface comprising a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode;

a driving circuit section over the insulating surface comprising a thin film transistor comprising;

a semiconductor layer;

a gate insulation film; and

a gate electrode,

a first inorganic insulation layer under the semiconductor layer;

a second inorganic insulation layer over the gate electrode;

a first organic insulation layer over the second inorganic insulation layer;

a third inorganic insulation layer over the first organic insulation layer;

a wiring layer extending over the third inorganic insulation layer;

a second organic insulation layer overlapping with an end of the wiring layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;

a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the wiring layer;

a light emitting element over the fourth inorganic insulation layer comprising;

a cathode layer;

an anode layer; and

a light emitting layer comprising an organic material between the cathode layer and the anode layer;

a fifth inorganic insulation layer over the light emitting element; and

a seal pattern over the fourth inorganic insulation layer,

wherein the driving circuit section is formed in the peripheral region of the pixel section,

wherein the light emitted from the light emitting material is visible through the fifth inorganic insulation layer, and

wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

55. The light emitting device according to claim 51, wherein the seal pattern is overlapped with the driving circuit section.

59. The light emitting device according to claim 51, wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×

10² atoms/cm³ or less.

63. The light emitting device according to claim 51, wherein the third inorganic insulation layer and the fourth inorganic insulation layer comprise silicon nitride having oxygen concentration of from 5×

10¹⁸ to 5×

10²¹ atoms/cm³.