Method for fabricating semiconductor device
First Claim
1. A method for fabricating a semiconductor device having a semiconductor layer formed by epitaxial growth from a single-crystal substrate, the method comprising the steps of:
- (a) forming a multilayer film having at least a first semiconductor layer composed of a group Ill-V compound doped with a p-type impurity and containing nitrogen and an n-type second semiconductor layer composed of a group Ill-V compound doped with an n-type impurity and containing nitrogen such that the single-crystal substrate is covered with the multilayer film; and
(b) irradiating the first semiconductor layer with a light beam to activate the p-type impurity in the first semiconductor layer.
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Abstract
A p-type InGaAlN layer, an InGaAlN active layer, and an n-type InGaAlN layer each having a composition represented by (AlxGa1-x)yIn1-yN (0≦x≦1, 0≦y≦1) are formed on a sapphire substrate. In the as-grown state, Mg is bonded to hydrogen atoms in the p-type InGaAlN layer. Then, the back surface of the sapphire substrate is irradiated with a laser beam in a nitrogen atmosphere. The resistance of the p-type InGaAlN layer is reduced by removing hydrogen therefrom with irradiation with a weak laser beam. During the irradiation with the laser beam, the diffusion of a dopant in a multilayer portion is suppressed such that a dopant profile retains sharpness. It is also possible to separate the sapphire substrate from the multilayer portion by subsequently using an intense laser beam for irradiation.
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Citations
32 Claims
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1. A method for fabricating a semiconductor device having a semiconductor layer formed by epitaxial growth from a single-crystal substrate, the method comprising the steps of:
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(a) forming a multilayer film having at least a first semiconductor layer composed of a group Ill-V compound doped with a p-type impurity and containing nitrogen and an n-type second semiconductor layer composed of a group Ill-V compound doped with an n-type impurity and containing nitrogen such that the single-crystal substrate is covered with the multilayer film; and
(b) irradiating the first semiconductor layer with a light beam to activate the p-type impurity in the first semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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Specification