Interconnected high speed electron tunneling devices

• US 20030133339A1
• Filed: 01/06/2003
• Published: 07/17/2003
• Est. Priority Date: 05/21/2001
• Status: Active Grant

• Current Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Original Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Inventors: Estes, Michael J., Moddel, Garret
• Granted Patent: US 7,126,151 B2
• Time in Patent Office: Days
• US Class Current: 365/200
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 2006/12123 Diode
• CPC Class Codes: G02B 2006/1213 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G02B 2006/12142 Modulator
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/1226 involving surface plasmon interaction
• CPC Class Codes: G02B 6/34 utilising prism or grating G02B6/293 takes precedence
• CPC Class Codes: G02B 6/4201 Packages, e.g. shape, construction, internal or external details
• CPC Class Codes: G02B 6/4279 Radio frequency signal propagation aspects of the electrical connection, high frequency adaptations
• CPC Class Codes: G02B 6/4292 the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06534 Optical coupling
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/06 : characterised by potential barriers
• CPC Class Codes: H01L 31/101 : Devices sensitive to infrared, visible or ultraviolet radiation
• CPC Class Codes: H10N 70/00 : Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching integrated devices or assemblies of multiple devices H10N79/00
• CPC Class Codes: Y02E 10/50 : Photovoltaic [PV] energy

Abstract

An integrated circuit chip includes a formation of integrated layers configured to define at least one integrated electronic component. The integrated layers further define an integrated electron tunneling device, which includes first and second non-insulating layers spaced apart from one another such that a given voltage can be provided thereacross. The integrated electron tunneling device further includes an arrangement disposed between the first and second non-insulating layers and serving as a transport of electrons between and to the first and second non-insulating layers. The arrangement includes at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling. The integrated electron tunneling device further includes an antenna structure connected with the first and second non-insulating layers, and the integrated electron tunneling device is electrically connected with the integrated electronic component.

Claims

1. An integrated circuit chip, comprising:

a formation of integrated layers, said integrated layers being configured so as to define at least one integrated electronic component, and said integrated layers being further configured to define an integrated electron tunneling device, said integrated electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling,

wherein said integrated electron tunneling device further includes an antenna structure connected with said first and second non-insulating layers, and wherein said integrated electron tunneling device is electrically connected with said integrated electronic component.

2. The integrated circuit chip of claim 1 wherein said integrated electron tunneling device is configured such that using only said first layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said given voltage, and wherein said arrangement further includes a different, second layer disposed directly adjacent to and configured to cooperate with said first layer such that said nonlinearity, with respect to said given voltage, is increased over and above said given value of nonlinearity by the inclusion of said second layer without the necessity for any additional layer.

3. The integrated circuit chip of claim 2 wherein said first layer is formed of a first insulating material.

4. The integrated circuit chip of claim 3 wherein said first layer in said arrangement is formed of an amorphous, insulating material.

5. The integrated circuit chip of claim 3 wherein said second layer is formed of a different, second insulating material.

6. The integrated circuit chip of claim 1 wherein said integrated electron tunneling device is configured to form a rectifying element.

7. The integrated circuit chip of claim 1 wherein said integrated electron tunneling device is configured to form a Schottky diode.

8. The integrated circuit chip of claim 1 wherein said antenna structure is integrally formed from said first and second non-insulating layers.

9. A method for fabricating an integrated circuit chip, said method comprising:

forming a plurality of integrated layers, said forming step including the steps of

defining at least one integrated electronic component and

defining an integrated electron tunneling device, said integrated electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers,

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling, and

an antenna structure connected with said first and second non-insulating layers; and

electrically connecting said integrated electron tunneling device with said integrated electronic component.

10. An integrated circuit chip, comprising:

a formation of integrated layers, said integrated layers being configured so as to define at least one integrated electronic component; and

an electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling,

wherein said electron tunneling device further includes an antenna structure connected with said first and second non-insulating layers, and wherein said electron tunneling device is formed on top of and separately from said formation of integrated layers without interference with an intended function of the integrated electronic component and its spatial location while being electrically connected with said integrated electronic component.

11. The integrated circuit chip of claim 10 wherein said electron tunneling device is configured such that using only said first layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said given voltage, and wherein said arrangement further includes a different, second layer disposed directly adjacent to and configured to cooperate with said first layer such that said nonlinearity, with respect to said given voltage, is increased over and above said given value of nonlinearity by the inclusion of said second layer without the necessity for any additional layer.

12. The integrated circuit chip of claim 11 wherein said first layer is formed of a first insulating material.

13. The integrated circuit chip of claim 12 wherein said first layer in said arrangement is formed of an amorphous, insulating material.

14. The integrated circuit chip of claim 12 wherein said second layer is formed of a different, second insulating material.

15. The integrated circuit chip of claim 11 wherein said electron tunneling device is configured to form a rectifying element.

16. The integrated circuit chip of claim 11 wherein said electron tunneling device is configured to form a Schottky diode.

17. The integrated circuit chip of claim 10 wherein said antenna structure is integrally formed from said first and second non-insulating layers.

18. A method for fabricating an integrated circuit chip, said method comprising:

forming a plurality of integrated layers and defining at least one integrated circuit electronic component;

arranging an electron tunneling device on top of said plurality of integrated layers, without interference with an intended function of the integrated electronic component and its spatial location, said electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers,

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling, and

an antenna structure connected with said first and second non-insulating layers; and

electrically connecting said electron tunneling device with said integrated electronic component.

19. An integrated circuit chip, comprising:

a formation of integrated layers, said formation of integrated layers being configured to define at least one integrated electronic component, and said formation of integrated layers being further configured to define an integrated optoelectronic device having an antenna, which antenna is configured to receive an optical signal,

wherein said integrated optoelectronic device is electrically connected with said integrated electronic component.

20. The integrated circuit chip of claim 19 wherein said integrated optoelectronic device includes an integrated electron tunneling device, said integrated electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling.

21. The integrated circuit chip of claim 20 wherein said integrated electron tunneling device is configured such that using only said first layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said given voltage, and wherein said arrangement further includes a different, second layer disposed directly adjacent to and configured to cooperate with said first layer such that said nonlinearity, with respect to said given voltage, is increased over and above said given value of nonlinearity by the inclusion of said second layer without the necessity for any additional layer.

22. The integrated circuit chip of claim 21 wherein said first layer is formed of a first insulating material.

23. The integrated circuit chip of claim 22 wherein said first layer in said arrangement is formed of an amorphous, insulating material.

24. The integrated circuit chip of claim 22 wherein said second layer is formed of a different, second insulating material.

25. The integrated circuit chip of claim 19 wherein said antenna structure is integrally formed from said first and second non-insulating layers.

26. An integrated circuit chip, comprising:

a formation of integrated layers defining at least one integrated electronic component; and

an optoelectronic device having an antenna, which antenna is configured to receive an optical signal incident thereon, wherein said optoelectronic device is formed on top of and separately from said formation of integrated layers without interference with an intended function of the integrated electronic component and its spatial location while being electrically connected with said integrated electronic component.

27. The integrated circuit chip of claim 26 wherein said optoelectronic device includes an electron tunneling device, said electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling.

28. The integrated circuit chip of claim 27 wherein said electron tunneling device is configured such that using only said first layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said given voltage, and wherein said arrangement further includes a different, second layer disposed directly adjacent to and configured to cooperate with said first layer such that said nonlinearity, with respect to said given voltage, is increased over and above said given value of nonlinearity by the inclusion of said second layer without the necessity for any additional layer.

29. The integrated circuit chip of claim 28 wherein said first layer is formed of a first insulating material.

30. The integrated circuit chip of claim 29 wherein said first layer is formed of an amorphous, insulating material.

31. The integrated circuit chip of claim 29 wherein said second layer is formed of a different, second insulating material.

32. The integrated circuit chip of claim 26 wherein said antenna structure is integrally formed from said first and second non-insulating layers.

33. An integrated circuit chip, comprising:

a formation of integrated layers defining at least one integrated electronic component; and

an optoelectronic device for providing an optical signal, said optoelectronic device including an antenna, which antenna is configured to transmit said optical signal, wherein said optoelectronic device is formed on top of and separately from said formation of integrated layers without interference with an intended function of the integrated electronic component and its spatial location while being electrically connected with said integrated electronic component.

34. The integrated circuit chip of claim 33 wherein said optoelectronic device includes an electron tunneling device, said electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling.

35. The integrated circuit chip of claim 34 wherein said electron tunneling device is configured such that using only said first layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said given voltage, and wherein said arrangement further includes a different, second layer disposed directly adjacent to and configured to cooperate with said first layer such that said nonlinearity, with respect to said given voltage, is increased over and above said given value of nonlinearity by the inclusion of said second layer without the necessity for any additional layer.

36. The integrated circuit chip of claim 35 wherein said first layer is formed of a first insulating material.

37. The integrated circuit chip of claim 36 wherein said first layer is formed of an amorphous, insulating material.

38. The integrated circuit chip of claim 36 wherein said second layer is formed of a different, second insulating material.

39. The integrated circuit chip of claim 33 wherein said antenna structure is integrally formed from said first and second non-insulating layers.

40. An integrated circuit chip, comprising:

at least one substrate;

circuitry formed on said substrate, said circuitry including at least first and second integrated electronic components;

a first optoelectronic device for providing an optical signal, said first optoelectronic device including a first antenna, which first antenna is configured to emit said optical signal, said first optoelectronic device being supported on said substrate and being electrically connected with said first integrated electronic component; and

a second optoelectronic device including a second antenna, which second antenna is configured to receive said optical signal from said first antenna such that said first and second optoelectronic devices are in optical communication with one another, while said second optoelectronic device is also supported on said substrate and is electrically connected with said second integrated electronic component.

41. The integrated circuit chip of claim 40 wherein at least one of said first and second optoelectronic device includes an electron tunneling device, said electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling.

42. The integrated circuit chip of claim 41 wherein said electron tunneling device is configured such that using only said first layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said given voltage, and wherein said arrangement further includes a different, second layer disposed directly adjacent to and configured to cooperate with said first layer such that said nonlinearity, with respect to said given voltage, is increased over and above said given value of nonlinearity by the inclusion of said second layer without the necessity for any additional layer.

43. The integrated circuit chip of claim 42 wherein said first layer is formed of a first insulating material.

44. The integrated circuit chip of claim 42 wherein said first layer is formed of an amorphous, insulating material.

45. The integrated circuit chip of claim 44 wherein said second layer is formed of a different, second insulating material.

46. The integrated circuit chip of claim 40 wherein said antenna structure is integrally formed from said first and second non-insulating layers.

47. An integrated circuit assembly, comprising:

first and second substrates;

first circuitry formed on said first substrate, said first circuitry including at least a first integrated electronic component;

second circuitry formed on said second substrate, said second circuitry including at least a second integrated electronic component;

a first optoelectronic device for providing an optical signal, said first optoelectronic device including a first antenna, which first antenna is configured to emit said optical signal, said first optoelectronic device being supported on said first substrate and being electrically connected with said first integrated electronic component; and

a second optoelectronic device including a second antenna, which second optoelectronic device is supported on said second substrate and is electrically connected with said second integrated electronic component, wherein second antenna is configured to receive said optical signal from said first antenna such that said first and second optoelectronic devices are in optical communication with one another.

48. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

an electron tunneling device also configured to act on said optical signal, said electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including

a first amorphous layer configured such that using only said first amorphous layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said given voltage, and

a different, second layer disposed directly adjacent to and configured to cooperate with said first amorphous layer such that the transport of electrons includes, at least in part, transport by means of tunneling through said first amorphous layer and said second layer, and such that said nonlinearity, with respect to said given voltage, is increased over and above said given value of nonlinearity by the inclusion of said second layer without the necessity for any additional layer; and

an optical configuration cooperating with said electron tunneling device and with said optoelectronic device such that said optical signal is transmitted therebetween.

49. The assembly of claim 48 wherein said electron tunneling device further includes an antenna structure connected with said first and second non-insulating layers, said antenna structure being configured to receive said optical signal.

50. The assembly of claim 49 wherein said antenna structure is integrally formed from said first and second non-insulating layers.

51. The assembly of claim 48 wherein said electron tunneling device further includes an antenna structure connected with said first and second non-insulating layers, said antenna structure being configured to transmit said optical signal.

52. The assembly of claim 51 wherein said antenna structure is integrally formed from said first and second non-insulating layers.

53. The assembly of claim 48 further comprising a substrate, wherein said electron tunneling device and said optoelectronic device are both disposed on said substrate.

54. The assembly of claim 53 wherein said substrate is formed, at least in part, of a semiconductor.

55. The assembly of claim 53 wherein said substrate is formed, at least in part, of a plastic.

56. The assembly of claim 48 further comprising first and second substrates, wherein said electron tunneling device is disposed on said first substrate and said optoelectronic device is disposed on said second substrate, and wherein said optical configuration is arranged such that said optical configuration thereby transmits said optical signal between said first and second substrates.

57. The assembly of claim 48 wherein said optical configuration includes a waveguide for guiding said optical signal between said electron tunneling device and said optoelectronic device.

58. The assembly of claim 48 wherein said optical configuration includes at least one optical component for directing said optical signal between said electron tunneling device and said optoelectronic device.

59. The assembly of claim 58 wherein said optical component is a lens.

60. The assembly of claim 48 wherein said first amorphous layer is formed of an amorphous, insulating material.

61. The assembly of claim 60 wherein said second layer is formed of a different, amorphous insulating material.

62. The assembly of claim 60 wherein said second layer is formed of a crystalline insulating material.

63. The assembly of claim 48 wherein said first non-insulating layer is formed of a metal.

64. The assembly of claim 63 wherein said second non-insulating layer is also formed of a metal.

65. The assembly of claim 63 wherein said second non-insulating layer is formed of a semiconductor.

66. The assembly of claim 63 wherein said second non-insulating layer is formed of a semi-metal.

67. The assembly of claim 63 wherein said second non-insulating layer is formed of a superconductor.

68. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

an electron tunneling device also configured to act on said optical signal, said electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including

a first amorphous layer configured such that using only said first amorphous layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said given voltage, and

a different, second layer disposed directly adjacent to and configured to cooperate with said first amorphous layer such that the transport of electrons includes, at least in part, transport by means of tunneling through said first amorphous layer and said second layer, and such that said nonlinearity, with respect to said given voltage, is increased over and above said given value of nonlinearity by the inclusion of said second layer without the necessity for any additional layer; and

means cooperating with said electron tunneling device and with said optoelectronic device for directing said optical signal therebetween.

69. In an optoelectronic system including at least one optoelectronic device for acting on an optical signal and an electron tunneling device for also acting on said optical signal, said electron tunneling device including first and second non-insulating layers spaced apart from one another, such that a given voltage can be provided across the first and second non-insulating layers, and an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement in turn including a first amorphous layer configured such that using only said first amorphous layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said given voltage, and a different, second layer disposed directly adjacent to and configured to cooperate with said first amorphous layer such that the transport of electrons includes, at least in part, transport by means of tunneling through said first amorphous layer and said second layer, and such that said nonlinearity, with respect to said given voltage, is increased over and above said given value of nonlinearity by the inclusion of said second layer without the necessity for any additional layer, a method comprising:

connecting said electron tunneling device with said optoelectronic device such that said optical signal is transmitted therebetween.

70. The method of claim 69 wherein said connecting step includes the step of guiding said optical signal between said electron tunneling device and said optoelectronic device using a waveguide.

71. The method of claim 70 wherein said step of guiding said optical signal includes the step of configuring a planar waveguide for directing said optical signal between said electron tunneling device and said optoelectronic device.

72. The method of claim 70 wherein said step of guiding said optical signal includes the step of configuring an optical fiber for directing said optical signal between said electron tunneling device and said optoelectronic device.

73. The method of claim 69 wherein said connecting step includes the step of directing said optical signal between said electron tunneling device and said optoelectronic device using at least one optical component.

74. The method of claim 73 wherein said directing step includes the step of using a lens as said optical component.

75. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device for providing an optical signal;

a detector for detecting an input electromagnetic radiation over a desired range of frequencies, said detector having an input for receiving said input electromagnetic radiation and an output and exhibiting a given responsivity, said detector including;

a voltage source for providing a bias voltage,

first and second non-insulating layers spaced apart from one another such that the bias voltage can be applied across the first and second non-insulating layers, wherein the first non-insulating layer is formed of a metal, and wherein said first and second non-insulating layers are configured to direct said electromagnetic radiation to a specific location within the detector, and

an arrangement disposed between the first and second non-insulating layers at said specific location and configured to serve as a transport of electrons between and to said first and second non-insulating layers as a result of the input electromagnetic radiation being received at said input, said arrangement including at least a first amorphous layer configured such that using only said first amorphous layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said bias voltage, and said arrangement further including a different, second layer disposed directly adjacent to and configured to cooperate with said first amorphous layer that said nonlinearity, with respect to said bias voltage, is increased over and above said given value of nonlinearity by the inclusion of said second layer without the necessity for any additional layer, and said arrangement being further configured such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that at least a portion of the input electromagnetic radiation received at said input is converted to an electrical signal at the output, said electrical signal having an intensity which depends on the given responsivity; and

an optical configuration cooperating with said optoelectronic device and with said detector such that said optical configuration directs said optical signal from said optoelectronic device toward said detector as said input electromagnetic radiation.

76. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

an emitter for providing electromagnetic radiation of a desired frequency at an output, said emitter including

a voltage source for providing a bias voltage,

first and second non-insulating layers spaced apart from one another such that the bias voltage can be applied across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers as a result of the bias voltage, said arrangement including at least a first amorphous layer configured such that using only said first amorphous layer in the arrangement would result in a given value of negative differential resistance when the bias voltage is applied across the first and second non-insulating layers, with respect to said bias voltage, and a different, second layer disposed directly adjacent to and configured to cooperate with said first amorphous layer such that said negative differential resistance, with respect to said bias voltage, is decreased below said given value of negative differential resistance by the inclusion of said second layer without the necessity for any additional layer, and said arrangement being further configured such that the transport of electrons includes, at least in part, transport by means of tunneling such that an oscillation in the transport of electrons results, said oscillation having an oscillation frequency equal to the desired frequency due to the negative differential resistance and causing an emission of said electromagnetic radiation of the desired frequency at the output; and

an optical configuration cooperating with the output of said emitter and with said optoelectronic device such that said optical configuration directs said electromagnetic radiation toward said optoelectronic device as said optical signal.

77. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

an emitter for providing electromagnetic radiation at an output, said emitter including

a voltage source for providing a bias voltage,

first and second non-insulating layers spaced apart from one another such that said bias voltage can be applied across the first and second non-insulating layers and configured to form an antenna structure for emitting said electromagnetic radiation, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers as a result of the bias voltage, said arrangement including at least a first amorphous layer configured such that using only said first amorphous layer in the arrangement would result in a given value of negative differential resistance when the bias voltage is applied across the first and second non-insulating layers, with respect to the bias voltage, and a different, second layer disposed directly adjacent to and configured to cooperate with said first amorphous layer such that said negative differential resistance, with respect to said bias voltage, is decreased below said given value of negative differential resistance by the inclusion of said second layer without the necessity for any additional layer, and said arrangement being further configured such that the transport of electrons includes, at least in part, transport by means of hot electron tunneling to cause an emission of electromagnetic radiation at said antenna structure, which antenna structure serves as the output; and

an optical configuration cooperating with the output of said emitter and with said optoelectronic device such that said optical configuration directs said electromagnetic radiation toward said optoelectronic device as said optical signal.

78. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

a modulator for modulating an input electromagnetic radiation incident thereon and providing a modulated electromagnetic radiation at an output, said modulator including

a voltage source for providing a modulation voltage, which modulation voltage is switchable between first and second voltage values,

first and second non-insulating layers spaced apart from one another such that the modulation voltage can be applied across the first and second non-insulating layers, said first and second non-insulating layers being configured to form an antenna structure for absorbing a given fraction of the input electromagnetic radiation with a given value of absorptivity, while a remainder of the input electromagnetic radiation is reflected by the antenna structure, wherein absorptivity is defined as a ratio of an intensity of the given fraction to a total intensity of the input electromagnetic radiation, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers as a result of the modulation voltage, said arrangement including at least a first amorphous layer and a different, second layer disposed directly adjacent to and configured to cooperate with the first amorphous layer such that the transport of electrons includes, at least in part, transport by means of tunneling, with respect to the modulation voltage, said arrangement being further configured to cooperate with the first and second non-insulating layers such that the antenna structure exhibits a first value of absorptivity, when modulation voltage of the first voltage value is applied across the first and second non-insulating layers, and exhibits a distinct, second value of absorptivity, when modulation voltage of the second voltage value is applied across the first and second non-insulating layers, causing the antenna structure to reflect a different amount of the input electromagnetic radiation to the output as modulated electromagnetic radiation with a contrast ratio, said contrast ratio being defined as a ratio of said first value of absorptivity to said second value of absorptivity, said arrangement being still further configured such that using only said first amorphous layer in the arrangement would result in a given value of said contrast ratio, with respect to the modulation voltage, while said contrast ratio is increased over and above said given value of contrast ratio by the inclusion of said second layer; and

an optical configuration cooperating with said modulator and with said optoelectronic device such that said modulated electromagnetic radiation is transmitted therebetween

an optical configuration cooperating with said modulator and with said optoelectronic device such that said optical configuration directs said optical signal from said optoelectronic device toward said modulator as said input electromagnetic radiation.

79. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

a modulator for modulating an input electromagnetic radiation incident thereon and providing a modulated electromagnetic radiation at an output, said modulator including

a voltage source for providing a modulation voltage, which modulation voltage is switchable between first and second voltage values,

first and second non-insulating layers spaced apart from one another such that the modulation voltage can be applied across the first and second non-insulating layers, said first and second non-insulating layers being configured to form an antenna structure for absorbing a given fraction of the input electromagnetic radiation with a given value of absorptivity, while a remainder of the input electromagnetic radiation is reflected by the antenna structure, wherein absorptivity is defined as a ratio of an intensity of the given fraction to a total intensity of the input electromagnetic radiation, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers as a result of the modulation voltage, said arrangement including at least a first amorphous layer and a different, second layer disposed directly adjacent to and configured to cooperate with the first amorphous layer such that the transport of electrons includes, at least in part, transport by means of tunneling, with respect to the modulation voltage, said arrangement being further configured to cooperate with the first and second non-insulating layers such that the antenna structure exhibits a first value of absorptivity, when modulation voltage of the first voltage value is applied across the first and second non-insulating layers, and exhibits a distinct, second value of absorptivity, when modulation voltage of the second voltage value is applied across the first and second non-insulating layers, causing the antenna structure to reflect a different amount of the input electromagnetic radiation to the output as modulated electromagnetic radiation with a contrast ratio, said contrast ratio being defined as a ratio of said first value of absorptivity to said second value of absorptivity, said arrangement being still further configured such that using only said first amorphous layer in the arrangement would result in a given value of said contrast ratio, with respect to the modulation voltage, while said contrast ratio is increased over and above said given value of contrast ratio by the inclusion of said second layer; and

an optical configuration cooperating with the output of said modulator and with said optoelectronic device such that said optical configuration directs said modulated electromagnetic radiation from the output of said modulator toward said optoelectronic device as said optical signal.

80. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

a surface plasmon device also configured to act on said optical signal, said surface plasmon device including

an input port configured to receive an input signal,

an output port, and

a structure including a tunneling junction connected with said input port and said output port, said tunneling junction being configured in a way (i) which provides electrons in a particular energy state within said structure, (ii) which produces surface plasmons in response to said input signal, (iii) which causes said structure to act as a waveguide for directing at least a portion of said surface plasmons along a predetermined path toward said output port such that the surface plasmons so directed interact with said electrons in a particular way, and (iv) which produces at said output port an output signal resulting from said particular interaction between said electrons and said surface plasmons; and

an optical configuration cooperating with said surface plasmon device and with said optoelectronic device such that said optical configuration directs said optical signal from said optoelectronic device toward the input port of said surface plasmon device as said input signal.

81. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

a surface plasmon device including

an input port configured to receive an input signal,

an output port, and

a structure including a tunneling junction connected with said input port and said output port, said tunneling junction being configured in a way (i) which provides electrons in a particular energy state within said structure, (ii) which produces surface plasmons in response to said input signal, (iii) which causes said structure to act as a waveguide for directing at least a portion of said surface plasmons along a predetermined path toward said output port such that the surface plasmons so directed interact with said electrons in a particular way, and (iv) which produces at said output port an output signal resulting from said particular interaction between said electrons and said surface plasmons; and

an optical configuration cooperating with said surface plasmon device and with said optoelectronic device such that the optical configuration directs said output signal from the output port of said surface plasmon device towards said optoelectronic device as said optical signal.

82. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

a detector for detecting input electromagnetic radiation incident thereon, said detector including

an input port configured to receive said input electromagnetic radiation,

an output port, and

a structure including a tunneling junction connected with said input port and said output port, said tunneling junction being configured in a way (i) which provides electrons in a particular energy state within said structure, (ii) which produces surface plasmons in response to said input electromagnetic radiation, (iii) which causes said structure to act as a waveguide for directing at least a portion of said surface plasmons along a predetermined path toward said output port such that the surface plasmons so directed interact with said electrons in a particular way, and (iv) which produces at said output port an output electrical signal resulting from said particular interaction between said electrons and said surface plasmons; and

an optical configuration cooperating with said optoelectronic device and with said detector such that said optical configuration directs said optical signal from said optoelectronic device toward said detector as said input electromagnetic radiation.

83. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

an amplifier for amplifying input electromagnetic radiation incident thereon, said amplifier including

an input port configured to receive said input electromagnetic radiation,

an output port, and

a structure including a tunneling junction connected with said input port and said output port, said tunneling junction being configured in a way (i) which provides electrons in a particular energy state within said structure, (ii) which produces surface plasmons in response to said input electromagnetic radiation, (iii) which causes said structure to act as a waveguide for directing at least a portion of said surface plasmons along a predetermined path toward said output port such that the surface plasmons so directed interact with said electrons in a particular way, and (iv) which produces an output electromagnetic radiation with a given gain at said output port, wherein said output electromagnetic radiation results from said particular interaction between said electrons and said surface plasmons; and

an optical configuration cooperating with the input port of said amplifier and with said optoelectronic device such that said optical configuration directs said optical signal from said optoelectronic device toward said amplifier as said input electromagnetic radiation.

84. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

an amplifier for amplifying input electromagnetic radiation incident thereon, said amplifier including

an input port configured to receive said input electromagnetic radiation,

an output port, and

a structure including a tunneling junction connected with said input port and said output port, said tunneling junction being configured in a way (i) which provides electrons in a particular energy state within said structure, (ii) which produces surface plasmons in response to said input electromagnetic radiation, (iii) which causes said structure to act as a waveguide for directing at least a portion of said surface plasmons along a predetermined path toward said output port such that the surface plasmons so directed interact with said electrons in a particular way, and (iv) which produces an output electromagnetic radiation with a given gain at said output port, wherein said output electromagnetic radiation results from said particular interaction between said electrons and said surface plasmons; and

an optical configuration cooperating with the output port of said amplifier and with said optoelectronic device such that said optical configuration directs said output electromagnetic radiation toward said optoelectronic device as said optical signal.

85. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

an emitter including

an input port configured to receive an input electrical current;

an output port; and

a structure including a tunneling junction connected with said input port and said output port, said tunneling junction including first and second non-insulating layers and an arrangement disposed between the first and second non-insulating layers, said arrangement being configured to serve as a transport of electrons between and to said first and second non-insulating layers and including at least two insulating layers, said tunneling junction being configured in a way (i) which causes said electrons to be in a particular energy state within said structure, (ii) which produces surface plasmons in response to said input electrical current, (iii) which causes said structure to act as a waveguide for directing at least a portion of said surface plasmons along a predetermined path toward said output port, and (iv) which produces at said output port an output electromagnetic radiation resulting from said particular interaction between said electrons and said surface plasmons; and

an optical configuration cooperating with the output port of said emitter and with said optoelectronic device such that said optical configuration directs said output electromagnetic radiation toward said optoelectronic device as said optical signal.

86. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

a laser including

an input port configured to receive an input electrical current,

an output port,

a structure including a tunneling junction connected with said input port and said output port, said tunneling junction being configured in a way (i) which provides electrons in a particular energy state within said structure and (ii) which produces surface plasmons in response to said input electrical current, and

a reflective assembly configured to form a resonant cavity surrounding said structure, wherein said reflective assembly is configured for selectively confining at least a portion of said surface plasmons within said resonant cavity while selectively directing another portion of said surface plasmons along a predetermined path toward said output port such that the surface plasmons so confined interact with said electrons in a particular way so as to produce an output electromagnetic radiation, wherein said output electromagnetic radiation results from said particular interaction between said electrons and said portion of surface plasmons confined within said resonant cavity; and

an optical configuration cooperating with the output port of said laser and with said optoelectronic device such that said optical configuration directs said output electromagnetic radiation toward said optoelectronic device as said optical signal.

87. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

a modulator also configured to act on said optical signal, said modulator including

an input port configured to receive an input electromagnetic radiation,

an output port,

a signal source for providing a modulation signal, and

a structure including a tunneling junction connected with said input port and said output port, said tunneling junction being configured for receiving said modulation signal from said signal source, said tunneling junction being further configured in a way (i) which provides electrons in a particular energy state within said structure responsive to and as a function of said modulation signal, (ii) which produces surface plasmons in response to said input electromagnetic radiation, (iii) which causes said structure to act as a waveguide for directing at least a portion of said surface plasmons along a predetermined path toward said output port such that the surface plasmons so directed interact with said electrons in a particular way, and (iv) which produces at said output port an output electromagnetic radiation resulting from said particular interaction between said electrons and said surface plasmons such that said output electromagnetic radiation displays at least one characteristic that is a function of said modulation signal; and

an optical configuration cooperating with the input port of said modulator and with said optoelectronic device such that said optical configuration directs said optical signal from said optoelectronic device toward said modulator as said input electromagnetic radiation.

88. An assembly comprising:

an optoelectronic system, in which an optical signal is present, said optoelectronic system including at least one optoelectronic device configured to act on said optical signal;

a modulator including

an input port configured to receive an input electromagnetic radiation,

an output port,

a signal source for providing a modulation signal, and

a structure including a tunneling junction connected with said input port and said output port, said tunneling junction being configured for receiving said modulation signal from said signal source, said tunneling junction being further configured in a way (i) which provides electrons in a particular energy state within said structure responsive to and as a function of said modulation signal, (ii) which produces surface plasmons in response to said input electromagnetic radiation, (iii) which causes said structure to act as a waveguide for directing at least a portion of said surface plasmons along a predetermined path toward said output port such that the surface plasmons so directed interact with said electrons in a particular way, and (iv) which produces at said output port an output electromagnetic radiation resulting from said particular interaction between said electrons and said surface plasmons such that said output electromagnetic radiation displays at least one characteristic that is a function of said modulation signal; and

an optical configuration cooperating with the output port of said modulator and with said optoelectronic device such that said optical configuration directs said output electromagnetic radiation toward said optoelectronic device as said optical signal.

89. A device comprising:

a waveguide including an optical input port, which optical input port is configured for receiving an input light, and an optical output port, said waveguide being configured for directing said input light from said optical input port toward said optical output port; and

an optoelectronic assembly including

an electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling, and

a coupling arrangement configured to cooperate with said electron tunneling device and said waveguide for coupling at least a portion of said input light from said waveguide into said electron tunneling device.

90. The device of claim 89 wherein said electron tunneling device is configured for acting on said portion of said input light and to produce a modulated light, wherein said coupling arrangement is further configured for directing at least a portion of said modulated light into said waveguide, and wherein said waveguide is further configured for directing said portion of said modulated light toward said optical output port.

91. The device of claim 89 further comprising a substrate, and wherein said waveguide is supported on said substrate.

92. The device of claim 91 wherein said waveguide is a silicon-on-insulator waveguide.

93. The device of claim 91 wherein said substrate is formed of a semiconductor.

94. The device of claim 91 wherein said substrate is formed of a glass.

95. The device of claim 91 wherein said substrate is formed of a plastic.

96. The device of claim 89 wherein said coupling arrangement includes an antenna.

97. The device of claim 89 wherein said coupling arrangement includes a grating coupler.

98. The device of claim 89 wherein said coupling arrangement includes a surface plasmon evanescent coupler.

99. A device comprising:

a waveguide including an optical input port, which optical input port is configured for receiving an input light, and an optical output port, said waveguide being configured for directing said input light from said optical input port toward said optical output port; and

an optoelectronic assembly including

an electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling, and

a coupling arrangement configured to cooperate with said electron tunneling device and said waveguide for coupling at least a portion of said input light from said waveguide into said electron tunneling device,

wherein said electron tunneling device is configured for acting on said portion of said input light and to produce a modulated light, wherein said coupling arrangement is further configured for directing at least a portion of said modulated light into said waveguide, and wherein said waveguide is further configured for directing said portion of said modulated light toward said optical output port.

100. The device of claim 99 wherein said coupling arrangement includes an antenna.

101. The device of claim 99 wherein said coupling arrangement includes a grating coupler.

102. The device of claim 99 wherein said coupling arrangement includes a surface plasmon evanescent coupler.

103. An arrangement comprising:

an optical waveguide including an optical input port, which optical input port is configured for receiving an input light, and an optical output port, said optical waveguide being configured for directing said input light from said optical input port toward said optical output port; and

an optoelectronic assembly including

a surface plasmon device configured to act on an input signal, said surface plasmon device including

a device input port configured to receive said input signal,

a device output port, and

a structure including a tunneling junction connected with said device input port and said device output port, said tunneling junction being configured in a way (i) which provides electrons in a particular energy state within said structure, (ii) which produces surface plasmons in response to said input signal, (iii) which causes said structure to act as a surface plasmon waveguide for directing at least a portion of said surface plasmons along a predetermined path toward said device output port such that the surface plasmons so directed interact with said electrons in a particular way, and (iv) which produces at said device output port an output signal resulting from said particular interaction between said electrons and said surface plasmons, and

a coupling arrangement configured to cooperate with said surface plasmon device and said optical waveguide for coupling at least a portion of said input light from said waveguide into said surface plasmon device as said input signal.

104. The device of claim 103 wherein said coupling arrangement includes an antenna.

105. The device of claim 103 wherein said coupling arrangement includes a grating coupler.

106. The device of claim 103 wherein said coupling arrangement includes a surface plasmon evanescent coupler.

107. A device comprising:

an optical waveguide including an optical input port, which optical input port is configured for receiving an input light, and an optical output port, said optical waveguide being configured for directing said input light from said optical input port toward said optical output port; and

an optoelectronic assembly including

a surface plasmon device configured to act on an input signal, said surface plasmon device including

a device input port configured to receive an input signal,

a device output port, and

a structure including a tunneling junction connected with said device input port and said device output port, said tunneling junction being configured in a way (i) which provides electrons in a particular energy state within said structure, (ii) which produces surface plasmons in response to said input signal, (iii) which causes said structure to act as a surface plasmon waveguide for directing at least a portion of said surface plasmons along a predetermined path toward said device output port such that the surface plasmons so directed interact with said electrons in a particular way, and (iv) which produces at said device output port an output signal resulting from said particular interaction between said electrons and said surface plasmons, and

a coupling arrangement configured to cooperate with said surface plasmon device and said optical waveguide for coupling at least a portion of said output signal from said device output port into said optical waveguide such that said output signal is directed along with said input light toward said optical output port as an output light.

108. The device of claim 107 wherein said coupling arrangement includes an antenna.

109. The device of claim 107 wherein said coupling arrangement includes a grating coupler.

110. The device of claim 107 wherein said coupling arrangement includes a surface plasmon evanescent coupler.

111. An integrated circuit chip comprising:

a substrate;

a formation of integrated layers supported on said substrate, said integrated layers being configured so as to define at least one integrated electronic component;

an optical waveguide also supported on said substrate, said optical waveguide including an optical input port, which optical input port is configured for receiving an input light including a clock signal encoded thereon; and

at least one optoelectronic assembly electrically connected with said integrated electronic component and including

an electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling, and

a coupling arrangement configured to cooperate with said electron tunneling device and said optical waveguide for coupling at least a portion of said input light including the clock signal from said waveguide into said electron tunneling device,

wherein said electron tunneling device is configured to (i) receive said portion of said input light, (ii) produce an electric signal and (iii) transmit said electric signal toward said integrated electronic component electrically connected with said optoelectronic assembly for use by said integrated electronic component.

112. The integrated circuit chip of claim 111 wherein said optical waveguide is configured such that said input light received at said optical input port becomes distributed substantially throughout and within the optical waveguide.

113. The integrated circuit chip of claim 111 wherein said optoelectronic assembly is formed on top of and separately from said formation of integrated layers without interference with the intended function of the integrated electronic component and its spatial location, and wherein said optical waveguide is in turn formed on top of said optoelectronic assembly.

114. The integrated circuit chip of claim 111 wherein said formation of integrated layers defines a second integrated electronic component, and wherein said integrated circuit chip further includes a second optoelectronic assembly electrically connected with said second integrated electronic component and configured to (i) receive another portion of said input light including the clock signal, (ii) produce a second electric signal and (iii) transmit said second electric signal toward said second integrated electronic component electrically connected with said optoelectronic assembly for use by said second integrated electronic component.

115. An integrated circuit chip comprising:

a substrate;

an optical waveguide supported on said substrate, said optical waveguide including an optical input port, which optical input port is configured for receiving an input light including a clock signal encoded thereon;

a formation of integrated layers also supported on said substrate, said integrated layers being configured so as to define at least one integrated electronic component, and said integrated layers being further configured to define an optoelectronic assembly electrically connected with said integrated electronic component and including

an electron tunneling device including

first and second non-insulating layers spaced apart from one another such that a given voltage can be provided across the first and second non-insulating layers, and

an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling, and

a coupling arrangement configured to cooperate with said electron tunneling device and said optical waveguide for coupling at least a portion of said input light including the clock signal from said waveguide into said electron tunneling device,

wherein said electron tunneling device is configured to (i) receive said portion of said input light, (ii) produce an electric signal and (iii) transmit said electric signal toward said integrated electronic component connected with said optoelectronic assembly for use by said integrated electronic component.

116. The integrated circuit chip of claim 115 wherein said optical waveguide is configured such that said input light received at said optical input port becomes distributed substantially throughout and within said optical waveguide.