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Nitrde semiconductor element and production method thereof

  • US 20030139037A1
  • Filed: 11/19/2002
  • Published: 07/24/2003
  • Est. Priority Date: 03/27/2001
  • Status: Active Grant
First Claim
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1. A nitride semiconductor device, comprising a plurality of seed crystal portions made of a nitride compound semiconductor and formed in stripes, and a crystal layer including a lateral growth region made of a nitride compound semiconductor and grown from the seed crystal portions as bases and a meeting portion on a substrate, wherein the meeting portion is formed in a position away from a center between adjacent seed crystal portions in a direction parallel to a surface of the substrate.

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