Nitrde semiconductor element and production method thereof
First Claim
1. A nitride semiconductor device, comprising a plurality of seed crystal portions made of a nitride compound semiconductor and formed in stripes, and a crystal layer including a lateral growth region made of a nitride compound semiconductor and grown from the seed crystal portions as bases and a meeting portion on a substrate, wherein the meeting portion is formed in a position away from a center between adjacent seed crystal portions in a direction parallel to a surface of the substrate.
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Accused Products
Abstract
Provided is a nitride semiconductor device with high reliability and high flexibility in design and manufacture of the device. The nitride semiconductor device comprises a seed crystal portion (11) formed on a sapphire substrate (10) and having a mask (12) on one side surface thereof, and a GaN layer (15) grown on the sapphire substrate (10) and the seed crystal portion (11) through epitaxial lateral overgrowth. The GaN layer (15) is grown only from an exposed side surface of the seed crystal portion (11) which is not covered with the mask (12), so the lateral growth of the GaN layer (15) is asymmetrically carried out. Thereby, a meeting portion (32) is formed in the vicinity of a boundary between the seed crystal portion (11) and the mask (12) in a thickness direction of the GaN layer (15). Therefore, as the meeting portion (32) is formed in a position away from the center between the adjacent seed crystal portions (11) in a direction parallel to a surface of the substrate, a width WL of a lateral growth region is larger with respect to a pitch WP of the seed crystal potion (11), compared with conventional configurations.
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Citations
20 Claims
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1. A nitride semiconductor device, comprising a plurality of seed crystal portions made of a nitride compound semiconductor and formed in stripes, and a crystal layer including a lateral growth region made of a nitride compound semiconductor and grown from the seed crystal portions as bases and a meeting portion on a substrate,
wherein the meeting portion is formed in a position away from a center between adjacent seed crystal portions in a direction parallel to a surface of the substrate.
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6. A nitride semiconductor device, comprising a seed crystal layer made of a nitride compound semiconductor, a plurality of masks formed in stripes on the seed crystal layer, and a crystal layer including a lateral growth region made of a nitride compound semiconductor and grown on the seed crystal layer with the mask in between and a meeting portion on a substrate,
wherein the meeting portion is formed in a position away from a center line of the mask orthogonal to a surface of the substrate in a direction parallel to the surface of the substrate.
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11. A method of manufacturing a nitride semiconductor device, comprising the steps of:
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forming a plurality of seed crystal portions made of a nitride compound semiconductor in stripes on a substrate;
forming a mask on one side surface of the seed crystal portion or on one side surface and a top surface of the seed crystal portion; and
forming a crystal layer made of a nitride compound semiconductor from the seed crystal portions as bases. - View Dependent Claims (12, 13, 14, 15)
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16. A method of manufacturing a nitride semiconductor device, comprising the steps of:
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forming a seed crystal layer made of a nitride compound semiconductor on a substrate;
forming a plurality of masks having a shape with an end and the other end of different thicknesses in a laminated direction in stripes on the seed crystal layer; and
forming a crystal layer made of a nitride compound semiconductor on the seed crystal layer with the masks in between. - View Dependent Claims (17, 18, 19, 20)
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Specification