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Method of manufacturing semiconductor light emitting device and oxidation furnace

  • US 20030139060A1
  • Filed: 12/13/2002
  • Published: 07/24/2003
  • Est. Priority Date: 12/13/2001
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor light emitting device comprising steps of;

  • (a) forming a semiconductor laminated part comprising a light emitting layer forming portion and a semiconductor layer for selective oxidation for forming a current injection region on a substrate, (b) etching away a part of said semiconductor laminated part such that said current injection region and its peripheral region would be left in mesa-shape, (c) forming a predetermined range of current injection region by oxidizing said semiconductor layer for selective oxidation etched in mesa-shape from its periphery toward its center, while observing said semiconductor layer for selective oxidation from a surface side of said semiconductor laminated part, and (d) forming electrodes for electrical connection on both sides of said semiconductor laminated part.

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