×

METHOD AND APPARATUS FOR IONIZED PLASMA DEPOSITION

  • US 20030141186A1
  • Filed: 02/16/2000
  • Published: 07/31/2003
  • Est. Priority Date: 02/16/2000
  • Status: Active Grant
First Claim
Patent Images

1. A plasma enhanced physical vapor deposition system chamber, comprising:

  • a vacuum chamber housing having;

    a sputtering target;

    a substrate support member disposed therein;

    a first gas inlet port in the vacuum chamber housing proximate the sputtering target for providing a first gas proximate the sputtering target; and

    a second gas inlet port in the vacuum chamber housing proximate the substrate support member for providing a second gas proximate the substrate support member.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×