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Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element

  • US 20030141506A1
  • Filed: 01/27/2003
  • Published: 07/31/2003
  • Est. Priority Date: 01/28/2002
  • Status: Active Grant
First Claim
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1. A nitride semiconductor element comprising, at least a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, from a supporting substrate successively, wherein, the first terminal and a first insulating protect layer are interposed between the conductive layer and a first conductive type nitride semiconductor layer.

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