Radiation emitting semiconductor component with luminescent conversion element

• US 20030141510A1
• Filed: 10/28/2002
• Published: 07/31/2003
• Est. Priority Date: 04/26/2000
• Status: Active Grant

• Current Assignee: OSRAM Licht AG (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Brunner, Herbert, Debray, Alexandra, Jager, Harald, Waitl, Gunther
• Granted Patent: US 6,897,490 B2
• Time in Patent Office: Days
• US Class Current: 257/81
• CPC Class Codes: H01L 2224/4554 Coating
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The invention describes a radiation-emitting semiconductor component with a luminescent conversion element, at which the semiconductor body is placed in a recess of the base body. A cup-like area is molded inside of the recess around the semiconductor body, which contains the luminescent conversion element and coats the semiconductor body. The cup-like portion is formed as indentation inside of the recess or as annular border on the base of the recess.

Claims

1. A radiation emitting semiconductor component comprising:

a base body defining an open interior recess, the recess further comprising walls defining a cup like molded portion wherein at least one semiconductor body and a luminescent conversion element are accommodated such that said luminescent conversion element defines a boundary surface between said cup like molded portion and a remainder of the open interior recess.

2. The radiation emitting semiconductor component according to claim 1, wherein the cup like portion is molded in an indentation inside the open interior recess.

3. The radiation emitting semiconductor component according to claim 2, wherein a conductor frame is imbedded into the base body such that a portion of the conductor frame forms a floor of the indentation.

4. The radiation emitting semiconductor component according to claim 1, wherein the cup like portion is molded on a floor of the open interior recess, the cup like portion defined by an annular border.

5. The radiation emitting semiconductor component according to claim 4, wherein a conductor frame is imbedded into the base body so that a portion of the conductor frame forms a floor of the open interior recess and the annular border is molded on the conductor frame.

6. The radiation emitting semiconductor component according to claim 1, wherein the base body comprises a unibody.

7. The radiation emitting semiconductor component according to claim 1, wherein the base body is formed by an injection molding of duroplastic material.

8. The radiation emitting semiconductor component according to claim 2, wherein internal faces of walls defining the cup like portion are reflective.

9. The radiation emitting semiconductor component according claim 1, wherein the open interior recess is at least partially filled with a radiation transparent filling compound which verges on the luminescent conversion element.

10. The radiation emitting semiconductor component according to claim 9, wherein the filling compound comprises a reaction resin.

11. The radiation emitting semiconductor component according to claim 9, wherein the filling compound comprises at least one of an acrylic resin, an epoxy, a silicone resin and a mixture of an acrylic resin, an epoxy, and a silicone resin.

12. The radiation emitting semiconductor component according to claim 3, wherein the conductor frame comprises a chip service area and a wire service area and that the semiconductor body is installed on the chip service area and is connected with the wire service area by a wire connection.

13. The radiation emitting semiconductor component according to claim 1, wherein the luminescent conversion element comprises at least one of an organic luminous substance and an inorganic luminous substance, embedded into the matrix.

14. The radiation emitting semiconductor component according to claim 13, wherein the luminescent conversion element comprises at least one of YAG:

Ce, TbYAG;

Ce, GdYAG;

Ce and a mixture of YAG;

Ce, ThYAG;

Cc, and GdYAG;

Ce, wherein Al can be at least partially replaced by Ga or In.

15. The radiation emitting semiconductor component according to claim 13, wherein the matrix comprises a reaction resin.

16. The radiation emitting semiconductor component according to claim 13, wherein the matrix comprises one of an acrylic resin, epoxy, silicone resin and a mixture of acrylic resin, epoxy, and silicone resin.

17. The radiation emitting semiconductor component according to claim 13, wherein the filling of the open interior recess and the matrix of the luminescent conversion element comprise different compositions.

18. The radiation emitting semiconductor component according to claim 13, wherein the open interior recess is filled with a compound containing epoxy and the matrix comprises a silicone resin.

19. The radiation emitting semiconductor component according to claim 1, wherein a central wavelength of radiation emitted by the semiconductor body is below 460 nm.

20. The radiation emitting semiconductor component according to claim 1, wherein semiconductor body emission and luminescent conversion element are complementary such that white light results therefrom.

21. A method for producing a radiation emitting semiconductor component with a:

luminescent conversion element, comprising the steps of;

forming a base body having a open interior recess and an imbedded conductor frame,

coating the conductor frame with a compound,

forming a chip service area on the conductor frame and recessing the area,

forming a cup like portion on the area, the cup like portion defining an internal recess,

installing a semiconductor body on the area and bonding the semiconductor body,

filling the cup like portion with a luminescent conversion element such that a boundary surface of the luminescent conversion element separates the cup like portion internal recess from the open interior recess.

22. A method for the production of a radiation emitting semiconductor component with a luminescent conversion element, further comprising the steps of:

forming a base body having an open internal region and an imbedded conductor frame, the frame further comprising a chip service area,

molding an annular border around the chip service area, the border defining a cup-like portion having an interior area,

installing a semiconductor body on the chip service area and bonding the semiconductor body, and

filling the interior area with a luminescent conversion element.

23. The method according to claim 22, wherein, the luminescent conversion element defines a boundary surface separating the interior area and open internal region.

24. The method according to claim 22, wherein the base body is produced by an injection molding of duroplastic material.

25. The method according to claim 22, wherein the open internal region is filled with a radiation transparent filling compound.