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Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same

  • US 20030141562A1
  • Filed: 02/04/2003
  • Published: 07/31/2003
  • Est. Priority Date: 08/01/2000
  • Status: Active Grant
First Claim
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1. A method of making a MEM switch or tunneling sensor comprising the steps of:

  • (a) defining a cantilevered beam structure and a mating structure on an etch stop formed on first substrate or wafer;

    (b) forming at least one contact structure and a mating structure on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer;

    (c) positioning the mating structure of the first substrate into a confronting relationship with the mating structure of the second substrate or wafer;

    (d) bonding a layer associated with said mating structure on the first substrate or wafer with a layer associated with the mating structure on the second substrate or wafer;

    (e) removing at least a portion of the first substrate or wafer and the etch stop to release the cantilevered beam structure.

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