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Temperature sensor and method for operating a temperature sensor

  • US 20030141920A1
  • Filed: 08/13/2002
  • Published: 07/31/2003
  • Est. Priority Date: 01/30/2002
  • Status: Active Grant
First Claim
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1. A temperature sensor, comprising:

  • a first FET transistor circuit and a second FET transistor circuit each having a gate voltage and a temperature-independent operating point at which, for a constant drain-source current, the gate voltage is essentially temperature-independent; and

    a circuit for operating said first FET transistor circuit at a first operating point being different from said temperature-independent operating point;

    said circuit also being for operating said second FET transistor circuit at a second operating point being different from said temperature-independent operating point;

    said first FET transistor circuit providing a first voltage;

    said second FET transistor circuit providing a first voltage; and

    a difference between the first voltage and the second voltage being evaluated as a measure of a temperature at a transistor circuit selected from a group consisting of said first FET transistor circuit and said second FET transistor circuit.

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