Apparatus and method for plasma assisted deposition

• US 20030143328A1
• Filed: 07/16/2002
• Published: 07/31/2003
• Est. Priority Date: 01/26/2002
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hytros, Mark M., Xi, Ming, Chen, Chen-An, Yang, Michael X., Gelatos, Avgerinos
• Granted Patent: US 6,998,014 B2
• Time in Patent Office: Days
• US Class Current: 427/255.28
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/42 Silicides
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/4554 Plasma being used non-continuously in between ALD reactions C23C16/56 takes precedence
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/515 using pulsed discharges
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01L 21/0212 the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/28568 the conductive layers comprising transition metals H01L21/28518 takes precedence
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3127 Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric

Abstract

Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.

Claims

1. A substrate processing chamber, comprising:

a top shower plate;

a bottom shower plate;

an insulator disposed between the top shower plate and the bottom shower plate;

a power source coupled to the top shower plate; and

a controller adapted to control the power source to provide pulses of power to the top shower plate.

2. The substrate processing chamber of claim 1, wherein the bottom shower plate comprises columns having column holes in communication with a top surface and a bottom surface of the bottom shower plate and comprises grooves having groove holes in communication with the bottom surface of the bottom shower plate.

3. The substrate processing chamber of claim 2, wherein the top shower plate comprises holes in communication with a top surface and a bottom surface of the top shower plate.

4. The substrate processing chamber of claim 3, further comprising:

a gas box having a first gas channel;

a gas conduit coupled to the first gas channel of the gas box, disposed through an aperture of the top shower plate, and coupled to an aperture of the bottom shower plate, the aperture of the bottom shower plate in communication with the grooves of the bottom shower plate.

5. The substrate processing chamber of claim 4, wherein the first gas channel is adapted to deliver one or more gases from the gas box through the gas conduit to the grooves of the bottom shower plate.

6. The substrate processing chamber of claim 4, wherein the gas conduit comprises an insulating material.

7. The substrate processing chamber of claim 4, wherein the aperture of the bottom shower plate is located at a central portion on a top surface of the bottom shower plate.

8. The substrate processing chamber of claim 4, wherein the gas box further comprises a second gas channel, the second gas channel adapted to deliver one or more gases from the gas box to the top surface of the top shower plate.

9. The substrate processing chamber of claim 8, wherein the first gas channel is located at a central portion of the gas box and wherein the second gas channel comprises one or more outer gas channels adjacent the first gas channel.

10. The substrate processing chamber of claim 8, wherein the first gas channel is coupled to a refractory metal containing gas source.

11. The substrate processing chamber of claim 10, wherein the refractory metal containing gas source is a titanium containing gas source.

12. The substrate processing chamber of claim 10, further comprising a valve coupling the refractory metal containing gas source and the first gas channel.

13. The substrate processing chamber of claim 12, wherein the valve is adapted to selectively provide pulses or a continuous flow of a refractory metal containing compound from the refractory metal containing gas source.

14. The substrate processing chamber of claim 8, wherein the second gas channel is coupled to a hydrogen containing gas source.

15. The substrate processing chamber of claim 14, further comprising a valve coupling the hydrogen containing gas source and the second gas channel.

16. The substrate processing chamber of claim 15, wherein the valve is adapted to selectively provide pulses or a continuous flow of a hydrogen containing gas from the hydrogen containing gas source.

17. The substrate processing chamber of claim 8, wherein the second gas channel is coupled to a hydrogen/nitrogen containing gas source.

18. The substrate processing chamber of claim 17, wherein the hydrogen/nitrogen containing gas source is adapted to selectively provide a hydrogen/nitrogen containing gas comprising a hydrogen gas to a nitrogen gas in varying ratios.

19. The substrate processing chamber of claim 17, further comprising a valve coupling the hydrogen/nitrogen containing gas source and the second gas channel.

20. The substrate processing chamber of claim 19, wherein the valve is adapted to selectively provide pulses or a continuous flow of a hydrogen/nitrogen containing gas from the hydrogen/nitrogen containing gas source.

21. The substrate processing chamber of claim 1, wherein pulses of power to the top shower plate is adapted to generate pulses of plasma between the top shower plate and the bottom shower plate.

22. A gas distribution system, comprising:

a top shower plate coupled to a power source;

a bottom shower plate coupled through a switch to the power source and a ground;

an insulator disposed between the top shower plate and the bottom shower plate;

a substrate support; and

a controller adapted to control the power source and the switch to selectively provide power to the top shower plate and to ground the bottom shower plate to generate a plasma therebetween and to provide power to the top shower plate and to the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support.

23. The substrate processing chamber of claim 22, wherein the controller is adapted to control the power source to provide pulses of power.

24. The substrate processing chamber of claim 22, wherein the controller is adapted to control the power source to provide a continuous flow of power.

25. The substrate processing chamber of claim 22, wherein the controller is adapted to control the power source to selectively provide pulses of power and a continuous flow of power.

26. The substrate processing chamber of claim 22, further comprising:

a gas box having a first gas channel;

a gas conduit coupled to the first gas channel of the gas box, disposed through an aperture of the top shower plate, and coupled to an aperture of the bottom shower plate.

27. The substrate processing chamber of claim 26, wherein the gas box further comprises a second gas channel, the second gas channel adapted to deliver one or more gases from the gas box to the top surface of the top shower plate.

28. A substrate processing chamber, comprising:

a top shower plate;

a bottom shower plate;

an insulator disposed between the top shower plate and the bottom shower plate;

a first pathway and a second pathway formed through the top shower plate and the bottom shower plate;

a power source coupled to the top shower plate; and

a gas box having a first gas outlet in communication with the first pathway and a second outlet in communication with the second pathway, the first gas outlet and the second gas outlet proximate a central portion of the top shower plate.

29. The substrate processing chamber of claim 28, further comprising:

a first valve coupling the first gas outlet to a refractory metal containing gas source and adapted to deliver a refractory metal containing compound from the refractory metal containing gas source through the first pathway through the top shower plate and the bottom shower plate; and

a second valve coupling the second gas outlet to a second gas source and adapted to deliver a continuous flow of a second gas from the second gas source through the second pathway through the top shower plate and the bottom shower plate, the second gas selected from the group consisting of a hydrogen containing gas and hydrogen/nitrogen containing gas.

30. The substrate processing chamber of claim 29, wherein the first valve is adapted to selectively provide pulses or a continuous flow of a refractory metal compound.

31. The substrate processing chamber of claim 29, wherein the power source is adapted to selectively provide pulses or a continuous flow of power to the top shower plate.

32. The substrate processing chamber of claim 29, wherein the second gas source is adapted to selectively provide a hydrogen/nitrogen containing gas comprising a hydrogen gas to a nitrogen gas in varying ratios.

33. The substrate processing chamber of claim 29, further comprising a switch device coupling the power source and a grounding device to the bottom shower plate.

34. The substrate processing chamber of claim 33, wherein the power source is adapted to selectively provide pulses or a continuous flow of power to the bottom shower plate.

35. A method of depositing a layer over a substrate structure of a substrate comprising providing at least one cycle of gases, the at least one cycle comprising:

providing a continuous flow of a gas selected from the group consisting of a hydrogen containing gas and a hydrogen/nitrogen containing gas;

providing a pulse of a refractory metal containing compound during the continuous flow of the hydrogen containing gas; and

providing a pulse of a plasma power to generate a plasma from the continuous flow of the gas.

36. The method of claim 35, wherein the continuous flow of the gas acts as a purge gas between the pulse of the refractory metal containing compound and the pulse of the plasma power.

37. The method of claim 35, wherein the gas further comprises a carrier gas.

38. The method of claim 35, wherein the refractory metal containing compound comprises a titanium containing gas.

39. The method of claim 35, wherein the refractory metal containing compound further comprises a carrier gas.

40. The method of claim 35, wherein providing the pulse of the plasma power comprises providing the plasma power to a top shower plate to generate an electric field between the top shower plate and a bottom shower plate, wherein the continuous flow of the gas is provided between the top shower plate and the bottom shower plate.

41. The method of claim 35, wherein the at least one cycle, comprises heating the substrate to a substrate support temperature of about 500°

C. or less.

42. The method of claim 35, wherein the layer comprises a titanium layer.

43. The method of claim 35, wherein the layer comprises a titanium nitride layer.

44. The method of claim 35, wherein the layer comprises a titanium and a titanium nitride layer.

45. The method of claim 35, wherein the continuous flow of the gas and the pulse of the refractory metal are provided through separate paths through the gas distribution system.

46. A method of processing a substrate in a single chamber, comprising:

depositing a first layer, wherein depositing the first layer comprises;

(i) selectively providing a flow of a first gas selected from the group consisting of a continuous flow of a hydrogen containing gas and a continuous flow of a hydrogen/nitrogen containing gas;

(ii) selectively providing a flow of a second gas selected from the group consisting of pulses of a refractory metal containing compound and a continuous flow of a refractory metal containing compound;

(iii) selectively providing a flow of a plasma power selected from the group consisting of pulses of a plasma power to a top shower plate, a continuous flow of plasma power to a top shower plate, pulses of a plasma power to a top shower plate and a bottom shower plate, continuous flow of plasma power to a top shower plate and a bottom shower plate, and no plasma power to the chamber; and

depositing a second layer over the first layer, wherein depositing the second layer comprises changing one or more of the parameters (i) through (iii)

47. The method of claim 46, wherein the first gas and the second gas are provided through separate paths through a gas distribution system.

48. The method of claim 46, wherein the pulses of a refractory metal containing compound comprises pulses of a titanium containing compound and wherein the continuous flow of a refractory metal containing compound comprises a continuous flow of a titanium containing compound.

49. The method of claim 46, wherein depositing a first layer comprises providing pulses of a refractory metal and providing pulses of plasma power to a top shower plate.

50. The method of claim 49, wherein the pulses of the refractory metal and the pulses of the plasma power are provided separately.

51. The method of claim 49, wherein one or more of the pulses of the refractory metal and one or more of the pulses of the plasma power are provided together and one or more of the pulses of the refractory metal and one or more of the pulses of the plasma power are provided separately.

52. The method of claim 49, wherein depositing a second layer comprises:

(i) selectively providing a second flow of a first gas selected from the group consisting of a continuous flow of a hydrogen containing gas and a continuous flow of a hydrogen/nitrogen containing gas;

(ii) selectively providing a second flow of a second gas selected from the group consisting of pulses of a refractory metal containing compound and a continuous flow of a refractory metal containing compound;

(iii) selectively providing a second flow of a plasma power selected from the group consisting of pulses of a plasma power to a top shower plate, a continuous flow of plasma power to a top shower plate, pulses of a plasma power to a top shower plate and a bottom shower plate, continuous flow of plasma power to a top shower plate and a bottom shower plate, and no plasma power to the chamber; and

53. A method of processing a substrate in a single chamber comprising:

selectively performing a first process selected from the group consisting of cyclical layer deposition of a refractory metal layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal layer, cyclical layer deposition of a refractory metal nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, plasma-enhanced chemical vapor deposition of a refractory metal layer, plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, and chemical vapor deposition of a refractory metal nitride layer; and

selectively performing a second process selected from the group consisting of cyclical layer deposition of a refractory metal layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal layer, cyclical deposition of a refractory metal nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, plasma-enhanced chemical vapor deposition of a refractory metal layer, plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, and chemical vapor deposition of a refractory metal nitride layer.

54. The method of claim 53, wherein performing a first process is selected from the group consisting of cyclical layer deposition of a refractory metal layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal layer, cyclical layer deposition of a refractory metal nitride layer, and combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal nitride layer.

55. A method of processing a substrate in a single chamber comprising:

selectively performing a first process selected from the group consisting of cyclical layer deposition of a titanium layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium layer, cyclical layer deposition of a titanium nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium nitride layer, plasma-enhanced chemical vapor deposition of a titanium layer, plasma-enhanced chemical vapor deposition of a titanium nitride layer, and chemical vapor deposition of a titanium nitride layer; and

selectively performing a second process selected from the group consisting of cyclical layer deposition of a titanium layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium layer, cyclical layer deposition of a titanium nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium nitride layer, plasma-enhanced chemical vapor deposition of a titanium layer, plasma-enhanced chemical vapor deposition of a titanium nitride layer, and chemical vapor deposition of a titanium nitride layer.

56. The method of claim 55, wherein performing a first process is selected from the group consisting of cyclical layer deposition of a titanium layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium layer, cyclical layer deposition of a titanium nitride layer, and combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium nitride layer.