Method for forming thin semiconductor film, method for fabricating semiconductor device, system for executing these methods and electrooptic device

• US 20030148565A1
• Filed: 10/01/2002
• Published: 08/07/2003
• Est. Priority Date: 02/01/2001
• Status: Abandoned Application

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Yamanaka, Hideo
• Application Number:
  US10/240,439
• Publication Number:
  US 20030148565A1
• Time in Patent Office: Days
• US Class Current: 438/200
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02595 polycrystalline
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: Y02E 10/546 Polycrystalline silicon PV cells

Abstract

The present invention provides a method capable of easily forming a polycrystalline or monocrystalline semiconductor thin film of polycrystalline silicon with a high degree of crystallization and high quality at low cost, and an apparatus for carrying out the method. In a method of forming a polycrystalline (or monocrystalline) semiconductor thin film, a method of manufacturing a semiconductor device and an apparatus for carrying out these methods, in order to form a large-grain polycrystalline (or monocrystalline) semiconductor thin film (7) such as a polycrystalline silicon film with a high degree of crystallization on a substrate (1) or manufacturing a semiconductor device having the polycrystalline (or monocrystalline) semiconductor thin film (7), a low-crystalline semiconductor thin film (7A) is formed on the substrate (1), and then heated in a molten, semi-molten or non-molten state by laser annealing with ultraviolet rays (UV) or/and deep ultraviolet rays (DUV) and cooled to promote crystallization of the low-crystalline semiconductor thin film (7A), obtaining the polycrystalline (or monocrystalline) semiconductor thin film (7).

Claims

1. A method of forming a semiconductor thin film in forming a polycrystalline or monocrystalline semiconductor thin film on a substrate, the method comprising the first step of forming a low-crystalline semiconductor thin film on the substrate, and the second step of heating the low-crystalline semiconductor thin film in a molten, semi-molten or non-molten state by laser annealing with ultraviolet rays (UV) or/and deep ultraviolet rays (DUV) and cooling the thin film to promote crystallization of the low-crystalline semiconductor thin film.

3. A method according to claim 1 or 2, comprising repeating the first step and the second step.

4. A method according to claim 1 or 2, wherein a ultraviolet (UV) or/and deep ultraviolet (DUV) laser beam is produced by optical harmonic generation using a nonlinear optical effect and used for laser annealing.

5. A method according to claim 4, wherein a mixture of the laser beam produced by optical harmonic generation with a fundamental wave before optical harmonic generation is used.

6. A method according to claim 4, wherein laser annealing is performed by a zone purification method comprising irradiating the substrate by scanning with the laser beam moved relative to the substrate, or a multi-zone purification method comprising scanning the substrate by scanning with a plurality of laser beams.

7. A method according to claim 6, wherein the laser or the substrate moved while the substrate or the laser is fixed.

8. A method according to claim 4 or 5, wherein the substrate is irradiated with a long-wavelength component of the laser beam before a short-wavelength component or at a position in front of the irradiation position of the short-wavelength component.

9. A method according to claim 1 or 2, wherein a hot gas is blown on the substrate during laser annealing.

10. A method according to claim 1 or 2, wherein an appropriate amount of at least one catalytic element is contained in the low-crystalline semiconductor thin film, and the second step is performed in the state containing the catalytic element.

11. A method according to claim 1 or 2, wherein the low-crystalline semiconductor thin film is changed to a large-grain polycrystalline semiconductor thin film by laser annealing.

12. A method according to claim 1 or 2, comprising forming a stepped recess having a predetermined shape and dimensions in a predetermined element formation region on the substrate, forming the low-crystalline semiconductor thin film containing or not containing at least one catalytic element on the substrate including the recess, and performing graphoepitaxial growth by laser annealing using a bottom corner of the step as a seed to modify the low-crystalline semiconductor thin film to a monocrystalline semiconductor thin film.

13. A method according to claim 1 or 2, comprising forming a material layer having good lattice matching with a monocrystal semiconductor in a predetermined element formation region on the substrate, forming the low-crystalline semiconductor thin film containing or not containing at least one catalytic element on the material layer, and performing hetero epitaxial growth by laser annealing using the material layer as a seed to modify the low-crystalline semiconductor thin film to a monocrystalline semiconductor thin film.

14. A method according to claim 1 or 2, wherein the first step and the second step are continuously or successively performed by an integrated apparatus for at least both steps.

15. A method according to claim 3, comprising treating the polycrystalline semiconductor thin film by plasma discharge with hydrogen or a hydrogen-containing gas or treatment with hydrogen active species produced in catalytic reaction to clean the surface of the polycrystalline semiconductor thin film and/or remove a low-oxidation film before second laser annealing, forming the low-crystalline semiconductor thin film, and then performing laser annealing.

16. A method according to claim 1 or 2, wherein the laser annealing is performed in a low-pressure hydrogen or low-pressure hydrogen-containing gas, or a vacuum.

17. A method according to claim 1 or 2, wherein the substrate is heated to a temperature lower than its strain point during laser annealing.

18. A method according to claim 1 or 2, comprising forming a protecting insulating film on the low-crystalline semiconductor thin film, and then performing laser annealing in the air or atmospheric pressure nitrogen with the protective insulating film formed.

19. A method according to claim 1 or 2, comprising irradiating the low-crystalline semiconductor thin film formed on the substrate or covered with the protective insulating film with a laser beam from the upper surface, the lower surface or simultaneously the upper and lower surfaces during laser annealing by laser beam irradiation (however, the substrate is transparent (transmitting light at a wavelength of 400 nm or less) except in the case of irradiation from the upper surface).

20. A method according to claim 19, wherein comprising islanding the low-crystalline semiconductor thin film or the low-crystalline semiconductor thin film coated with the protective insulating film.

21. A method according to claim 19, wherein laser beam irradiation is performed in atmospheric-pressure nitrogen or the air.

22. A method according to claim 19, wherein laser beam irradiation is performed in a low-pressure hydrogen gas, a low-pressure hydrogen gas-containing gas or a vacuum.

23. A method according to claim 1 or 2, wherein laser annealing is performed under the action of a magnetic field and/or an electric field.

24. A method according to claim 1 or 2, wherein the low-crystalline semiconductor film comprises an amorphous silicon film, a microcrystal silicon-containing amorphous silicon film, a microcrystal silicon (amorphous silicon-containing microcrystal silicon) film, a polycrystalline silicon film containing amorphous silicon and microcrystal silicon, an amorphous germanium film, an amorphous germanium film containing microcrystal germanium, a microcrystal germanium (microcrystal germanium containing amorphous germanium) film, a polycrystalline germanium film containing amorphous germanium and microcrystal germanium, an amorphous silicon germanium film represented by Si_xGe₁₋

x (0<

x<

1), an amorphous carbon film, an amorphous carbon film containing microcrystal carbon, a microcrystal carbon (microcrystal carbon containing amorphous carbon) film, a polycrystalline carbon film containing amorphous carbon and microcrystal carbon, an amorphous silicon carbon film represented by Si_xC<sub>1−

x</sub> (0<

x<

1), or an amorphous gallium arsenic film represented by Ga_xAs<sub>1−

x</sub> (0<

x<

1).

25. A method according to claim 1 or 2, wherein the polycrystalline or monocrystalline semiconductor thin film is used for forming channel, source and drain regions of a thin film insulating gate-type field effect transistor, or a diode, wiring, a resistor, a capacitor or an electron emitter.

26. A method according to claim 25, wherein the low-crystalline semiconductor thin film is patterned (islanded) and then annealed with the laser to form channel, source and drain regions of a thin film insulating gate-type field effect transistor, or a diode, wiring, a resistor, a capacitor or an electron emitter.

27. A method according to claim 1 or 2, wherein the thin film is formed for a silicon semiconductor device, a silicon semiconductor integrated circuit device, a silicon-germanium semiconductor device, a silicon-germanium semiconductor integrated circuit device, a compound semiconductor device, a compound semiconductor integrated circuit device, a silicon carbide semiconductor device, a silicon carbide semiconductor integrated circuit device, a polycrystalline diamond semiconductor device, a polycrystalline diamond semiconductor integrated circuit device, a liquid crystal display device, an organic or inorganic electroluminescence (EL) display device, a filed emission display (FED) device, a luminescence polymer display device, a light emitting diode display device, a CCD area/linear sensor device, a CMOS or MOS sensor device, and a solar cell device.

28. A method according to claim 27, wherein the polycrystalline or monocrystalline semiconductor thin film is used for forming channel, source and drain regions of a thin film insulating gate-type field effect transistor constituting at least one of an internal circuit and a peripheral circuit during manufacture of a semiconductor device, an electrooptic display device, or a solid-state image device comprising the circuits.

29. A method according to claim 28, wherein a cathode or anode is formed below an organic or inorganic electroluminescence layer for each color so as to be connected to the drain or source of the thin film insulating gate-type field effect transistor.

30. A method according to claim 29, wherein the cathode covers active elements including the thin film insulating gate-type field effect transistor and the diode, or the cathode or anode is deposited over the entire surface of the organic or inorganic electroluminescence layer for each color and between the layers for respective colors.

31. A method according to claim 29, wherein a black mask layer is formed between the organic or inorganic electroluminescence layers for respective colors.

32. A method according to claim 28, wherein an emitter of a field emission display device comprises a n-type polycrystalline semiconductor film or a polycrystalline diamond film grown on the polycrystalline or monocrystalline semiconductor thin film and connected to the drain of the thin film insulating gate-type field effect transistor through the polycrystalline or monocrystalline semiconductor thin film.

33. A method according to claim 32, wherein a metal shielding film at a ground potential is formed on active elements including the thin film gate-type field effect transistor and the diode through an insulating film.

34. A method according to claim 33, wherein the metal shielding film is formed by the same step using the same material as a gate leading electrode of the field emission display device.

66. An electrooptic device comprising a cathode or anode provided below an organic or inorganic electroluminescence layer for each color to be connected to the drain or source of a thin film gate-type field effect transistor comprising the polycrystalline or monocrystalline semiconductor thin film according to claim 1 or 2, wherein the cathode covers active elements including the thin film gate-type field effect transistor and a diode, or the cathode or anode adheres to the whole surface of the organic or inorganic electroluminescence layer for each color and between the respective electroluminescence layers.

67. An electrooptic device according to claim 66, wherein a black mask is formed between the organic or inorganic electroluminescence layers for respective colors.

68. An electrooptic device comprising a field emission display (FED) having an emitter which comprises a n-type polycrystalline semiconductor film or polycrystalline diamond film connected to the drain of a thin film gate-type field effect transistor comprising the polycrystalline or monocrystalline semiconductor thin film according to claim 1 or 2 through the polycrystalline or monocrystalline semiconductor thin film, and grown on the polycrystalline or monocrystalline semiconductor thin film.

69. An electrooptic device according to claim 68, wherein a metal shielding film at a grounding potential is formed on active elements including the thin film gate-type field effect transistor and a diode through an insulating film.

70. An electrooptic device according to claim 69, wherein the metal shielding film is formed in the same step using the same material as a gate leading electrode of the thin film gate-type field emission display device.

2. A method of manufacturing a semiconductor device in manufacturing a semiconductor device comprising a polycrystalline or monocrystalline semiconductor thin film on a substrate, the method comprising the first step of forming a low-crystalline semiconductor thin film on the substrate, and the second step of heating the low-crystalline semiconductor thin film in a molten state, a semi-molten state or non-molten state by laser annealing with ultraviolet rays (UV) or/and deep ultraviolet rays (DUV) and cooling the thin film to promote crystallization of the low-crystalline semiconductor thin film.

35. An apparatus for forming a polycrystalline or monocrystalline semiconductor thin film on a substrate, the apparatus comprising first means for forming a low-crystalline semiconductor thin film on the substrate, and second means for heating the low-crystalline semiconductor thin film in a molten, semi-molten or non-molten state by laser annealing with ultraviolet rays (UV) or/and deep ultraviolet rays (DUV) and cooling the thin film to promote crystallization of the low-crystalline semiconductor thin film.

37. An apparatus according to claim 35 or 36, wherein the first means and the second means are repeated.

38. An apparatus according to claim 35 or 36, wherein a ultraviolet (UV) or/and deep ultraviolet (DUV) laser beam is produced by optical harmonic generation using a nonlinear optical effect and used for laser annealing.

39. An apparatus according to claim 38, wherein a mixture of the laser beam produced by optical harmonic generation with a fundamental wave before optical harmonic generation is used.

40. An apparatus according to claim 38, wherein laser annealing is performed by a zone purification method comprising irradiating the substrate by scanning with the laser beam moved relative to the substrate, or a multi-zone purification method comprising scanning the substrate by relatively scanning with a plurality of laser beams.

41. An apparatus according to claim 40, wherein the laser or the substrate moved while the substrate or the laser is fixed.

42. An apparatus according to claim 38 or 39, wherein the substrate is irradiated with a long-wavelength component of the laser beam before a short-wavelength component or at a position in front of the irradiation position of the short-wavelength component.

43. An apparatus according to claim 35 or 36, wherein a hot gas is blown on the substrate during the laser annealing.

44. An apparatus according to claim 35 or 36, further comprising means for adding an appropriate amount of at least one catalytic element to the low-crystalline semiconductor thin film.

45. An apparatus according to claim 35 or 36, wherein the first and second means are incorporated in an integrated apparatus for at least both means and continuously or successively used.

46. An apparatus according to claim 37, further comprising means for treating the polycrystalline semiconductor thin film by plasma discharge with hydrogen or a hydrogen-containing gas or treatment with hydrogen active species produced in catalytic reaction to clean the surface of the polycrystalline semiconductor thin film and/or remove a low-oxidation film before second laser annealing.

47. An apparatus according to claim 35 or 36, wherein the laser annealing is performed in a low-pressure hydrogen or low-pressure hydrogen-containing gas, or a vacuum.

48. An apparatus according to claim 35 or 36, wherein the substrate is heated to a temperature lower than its strain point during the laser annealing.

49. An apparatus according to claim 35 or 36, wherein a protective insulating film is formed on the low-crystalline semiconductor thin film, and then the laser annealing is performed in the air or atmospheric pressure nitrogen with the protective insulating film formed.

50. An apparatus according to claim 35 or 36, wherein the low-crystalline semiconductor thin film formed on the substrate or covered with the protective insulating film is irradiated with a laser beam from the upper surface, the lower surface or simultaneously the upper and lower surfaces during laser annealing by laser beam irradiation (however, the substrate is transparent (transmits light at a wavelength of 400 nm or less) except in the case of irradiation from the upper surface).

51. An apparatus according to claim 50, wherein the low-crystalline semiconductor thin film or the low-crystalline semiconductor thin film coated with the protective insulating film is islanded.

52. An apparatus according to claim 50, wherein laser beam irradiation is performed in atmospheric-pressure nitrogen or the air.

53. An apparatus according to claim 50, wherein laser beam irradiation is performed in a low-pressure hydrogen gas, a low-pressure hydrogen gas-containing gas or a vacuum.

54. An apparatus according to claim 35 or 36, wherein the laser annealing is performed under the action of a magnetic field and/or an electric field.

55. An apparatus according to claim 35 or 36, wherein the low-crystalline semiconductor film comprises an amorphous silicon film, a microcrystal silicon-containing amorphous silicon film, a microcrystal silicon (amorphous silicon-containing microcrystal silicon) film, a polycrystalline silicon film containing amorphous silicon and microcrystal silicon, an amorphous germanium film, an amorphous germanium film containing microcrystal germanium, a microcrystal germanium (microcrystal germanium containing amorphous germanium) film, a polycrystalline germanium film containing amorphous germanium and microcrystal germanium, an amorphous silicon germanium film represented by Si_xGe₁₋

x (0<

x<

1), an amorphous carbon film, an amorphous carbon film containing microcrystal carbon, a microcrystal carbon (microcrystal carbon containing amorphous carbon) film, a polycrystalline carbon film containing amorphous carbon and microcrystal carbon, an amorphous silicon carbon film represented by Si_xC<sub>1−

x</sub> (0<

x<

1), or an amorphous gallium arsenic film represented by Ga_xAs<sub>1−

x</sub> (0<

x<

1).

56. An apparatus according to claim 35 or 36, wherein the polycrystalline or monocrystalline semiconductor thin film is used for forming channel, source and drain regions of a thin film insulating gate-type field effect transistor, or a diode, wiring, a resistor, a capacitor or an electron emitter.

57. An apparatus according to claim 56, wherein the low-crystalline semiconductor thin film is patterned (islanded) and then annealed with the laser to form channel, source and drain regions of a thin film insulating gate-type field effect transistor, or a diode, wiring, a resistor, a capacitor or an electron emitter.

58. An apparatus according to claim 35 or 36, wherein the thin film is formed for a silicon semiconductor device, a silicon semiconductor integrated circuit device, a silicon-germanium semiconductor device, a silicon-germanium semiconductor integrated circuit device, a compound semiconductor device, a compound semiconductor integrated circuit device, a silicon carbide semiconductor device, a silicon carbide semiconductor integrated circuit device, a polycrystalline diamond semiconductor device, a polycrystalline diamond semiconductor integrated circuit device, a liquid crystal display device, an organic or inorganic electroluminescence (EL) display device, a filed emission display (FED) device, a luminescence polymer display device, a light emitting diode display device, a CCD area/linear sensor device, a CMOS or MOS sensor device, and a solar cell device.

59. An apparatus according to claim 58, wherein the polycrystalline or monocrystalline semiconductor thin film is used for forming channel, source and drain regions of a thin film insulating gate-type field effect transistor constituting at least one of an internal circuit and a peripheral circuit during manufacture of a semiconductor device, an electrooptic display device, or a solid-state image device comprising the circuits.

60. An apparatus according to claim 59, wherein a device comprising a cathode or anode which is formed below an organic or inorganic electroluminescence layer for each color so as to be connected to the drain or source of the thin film insulating gate-type field effect transistor is manufactured.

61. An apparatus according to claim 60, wherein a device comprising the cathode covering active elements including the thin film insulating gate-type field effect transistor and the diode, or the cathode or anode deposited over the entire surface of the organic or inorganic electroluminescence layer for each color and between the layers for respective colors is manufactured.

62. An apparatus according to claim 60, wherein a black mask layer is formed between the organic or inorganic electroluminescence layers for respective colors.

63. An apparatus according to claim 59, wherein an emitter of the field emission display device comprises a n-type polycrystalline semiconductor film or a polycrystalline diamond film grown on the polycrystalline or monocrystalline semiconductor thin film and connected to the drain of the thin film insulating gate-type field effect transistor through the polycrystalline or monocrystalline semiconductor thin film.

64. An apparatus according to claim 63, wherein a metal shielding film at a grounding potential is formed on active elements including the thin film gate-type field effect transistor and the diode through an insulating film.

65. An apparatus according to claim 64, wherein the metal shielding film is formed by the same step using the same material as a gate leading electrode of the field emission display device.

36. An apparatus for manufacturing a semiconductor device comprising a polycrystalline or monocrystalline semiconductor thin film on a substrate, the apparatus comprising first means for forming a low-crystalline semiconductor thin film on the substrate, and second means for heating the low-crystalline semiconductor thin film in a molten state, a semi-molten state or non-molten state by laser annealing with ultraviolet rays (UV) or/and deep ultraviolet rays (DUV) and cooling the thin film to promote crystallization of the low-crystalline semiconductor thin film.