High-voltage lateral transistor with a multi-layered extended drain structure
First Claim
1. A lateral high-voltage transistor fabricated on a substrate comprising:
- an insulating layer that covers a top surface of the substrate;
a drain region of a first conductivity type disposed above the insulating layer;
a body region of a second conductivity type opposite to the first conductivity type disposed above the insulating layer;
a plurality of parallel-arranged drift regions of the first conductivity type disposed above the insulating layer, each of the drift regions extending in a first direction from the drain region to the body region, adjacent ones of the drift regions being separated in a second direction orthogonal to the first direction by a dielectric layer;
a field plate member disposed within each dielectric layer, the field plate member being fully insulated from the drift regions;
a source region of the first conductivity type that adjoins the body region and is spaced-apart from the drift regions; and
an insulated gate member disposed adjacent to the body region, with a channel region being defined in the body region adjacent the insulated gate member between the source region and at least one of the drift regions.
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Abstract
A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from field plate members by one or more dielectric layers. With the field plate members at the lowest circuit potential, the transistor supports high voltages applied to the drain in the off-state. The layered structure may be fabricated in a variety of orientations. A MOSFET structure may be incorporated into the device adjacent to the source region, or, alternatively, the MOSFET structure may be omitted to produce a high-voltage transistor structure having a stand-alone drift region.
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Citations
17 Claims
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1. A lateral high-voltage transistor fabricated on a substrate comprising:
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an insulating layer that covers a top surface of the substrate;
a drain region of a first conductivity type disposed above the insulating layer;
a body region of a second conductivity type opposite to the first conductivity type disposed above the insulating layer;
a plurality of parallel-arranged drift regions of the first conductivity type disposed above the insulating layer, each of the drift regions extending in a first direction from the drain region to the body region, adjacent ones of the drift regions being separated in a second direction orthogonal to the first direction by a dielectric layer;
a field plate member disposed within each dielectric layer, the field plate member being fully insulated from the drift regions;
a source region of the first conductivity type that adjoins the body region and is spaced-apart from the drift regions; and
an insulated gate member disposed adjacent to the body region, with a channel region being defined in the body region adjacent the insulated gate member between the source region and at least one of the drift regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A lateral high-voltage transistor comprising:
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a drain region of a first conductivity type;
at least one source region of the first conductivity type;
a plurality of drift regions of the first conductivity type arranged in parallel and extending in a first direction from the drain region to the at least one source region, adjacent ones of the drift regions being separated in a second direction orthogonal to the first direction by a dielectric layer;
at least one field plate member disposed within the dielectric layer, the at least one field plate member being fully insulated from the drift regions. - View Dependent Claims (14, 15, 16, 17)
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Specification