Integrated balun and transformer structures

• US 20030151881A1
• Filed: 01/15/2003
• Published: 08/14/2003
• Est. Priority Date: 11/05/2001
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Chik Patrick Yue
• Inventors: Yue, Chik Patrick
• Granted Patent: US 6,779,261 B2
• Time in Patent Office: Days
• US Class Current: 361/268
• CPC Class Codes: H03F 2200/541 Transformer coupled at the output of an amplifier
• CPC Class Codes: H03F 2203/45662 the LC comprising inductive coupled loading elements
• CPC Class Codes: H03F 3/45183 Long tailed pairs H03F3/4521, H03F3/45237 take precedence
• CPC Class Codes: H03H 7/42 Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
• CPC Class Codes: Y10T 29/4902 Electromagnet, transformer or inductor
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

A method for producing an on-chip signal transforming device. The method includes providing a substrate, and laying a first conductive layer above the substrate, wherein the first conductive layer has a plurality of interleaved inductors. The method then includes laying a second conductive layer above the substrate, wherein the second conductive layer has at least one inductor.

Claims

1. A method for producing an on-chip signal transforming device, the method comprising:

providing a substrate;

laying a first conductive layer above the substrate, wherein the first conductive layer has a plurality of interleaved inductors; and

laying a second conductive layer above the substrate and insulated from the first conductive layer, wherein the second conductive layer has at least one inductor.

2. The method of claim 1, wherein the second conductive layer is below the first conductive layer.

3. The method of claim 1, wherein the at least one inductor is a plurality of interleaved inductors.

4. The method of claim 1, wherein the at least one inductor is a spiral inductor.

5. The method of claim 1, further comprising laying a third conductive layer insulated from the first and second conductive layers and wherein the at least one inductor is partly in the third conductive layer and the first conductive layer is in between the second conductive layer and the third conductive layer.

6. A method for producing an on-chip signal transforming device, the method comprising:

providing a substrate;

laying a first conductive layer above the substrate, wherein the first conductive layer has a plurality of interleaved inductors; and

laying a second conductive layer above the substrate insulated from the first conductive layer, wherein the second conductive layer has a plurality of interleaved inductors.

7. A method for producing an on-chip signal transforming device, the method comprising:

providing a substrate;

laying a first conductive layer above the substrate, wherein the first conductive layer has a plurality of interleaved inductors; and

laying a second conductive layer above the substrate insulated from the first conductive layer, wherein the second conductive layer has a first part of an inductor;

laying a third conductive layer insulated from the first and second conductive layers; and

wherein the inductor has a second part in the third conductive layer, the first part and the second part are connected by way of a via and the first conductive layer is in between the second conductive layer and the third conductive layer.

8. A method for producing an on-chip signal transforming device, the method comprising:

providing a substrate;

laying a first conductive layer above the substrate, wherein the first conductive layer has a first spiral inductor; and

laying a second conductive layer above the substrate insulated from the first conductive layer, wherein the second conductive layer has at least a second spiral inductor, such that the first and second spiral inductors are interleaved.

9. The method according to claim 8 further including the step of:

laying a third spiral inductor on a third conductive layer above the substrate and insulated from the first and second conductive layers, wherein the third conductive layer has at least a third spiral inductor that couples to the first spiral inductor and the second spiral inductor.

10. A method for producing an on-chip signal transforming device, the method comprising:

providing a substrate;

laying a first conductive layer above the substrate, wherein the first conductive layer has a first spiral inductor and a second spiral inductor that are interleaved; and

laying a second conductive layer above the substrate insulated from the first conductive layer;

providing a conductive path from the first conductive layer to the second conductive layer and back to the first conductive layer to allow the first spiral inductor to cross over the second spiral inductor.

11. The method according to claim 10 further including the step of:

laying a third spiral inductor on a third conductive layer above the substrate and insulated from the first and second conductive layers, wherein the third conductive layer has at least a third spiral inductor that couples to the first spiral inductor and the second spiral inductor.