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Method of controlling plasma etch process

  • US 20030153102A1
  • Filed: 02/14/2002
  • Published: 08/14/2003
  • Est. Priority Date: 02/14/2002
  • Status: Active Grant
First Claim
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1. A method for automated monitoring and controlling of a semiconductor wafer plasma etching process comprising the steps of:

  • collecting data versus time during a plasma etching process said data including information representative of a concentration of at least one pair of reactant and product species present during the course of the plasma etching process;

    calculating a selected ratio of at least one reactant species and one product species at selected time intervals in the plasma etching process to create real-time reactant-product ratio data;

    retrieving pre-determined reactant-product ratio data for the at least one reactant species and one product species for comparison with the real-time reactant-product ratio data;

    comparing the pre-determined reactant-product ratio data with the real-time reactant-product ratio data to determine a difference; and

    adjusting at least one plasma process operating parameter to minimize the difference.

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