Process for producing a highly doped silicon single crystal
First Claim
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1. A process for producing a highly doped silicon single crystal comprising pulling the silicon single crystal from a molten material which contains dopant and is held in a rotating crucible;
- and limiting growth fluctuations during the pulling of the silicon single crystal to an amount of −
0.3 mm/min to 0.3 mm/min.
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Abstract
A process for producing a highly doped silicon single crystal by pulling the single crystal from a molten material which contains dopant and is held in a rotating crucible. Growth fluctuations during the pulling of the single crystal are limited to an amount of −0.3 mm/min to 0.3 mm/min.
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Citations
7 Claims
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1. A process for producing a highly doped silicon single crystal comprising
pulling the silicon single crystal from a molten material which contains dopant and is held in a rotating crucible; - and
limiting growth fluctuations during the pulling of the silicon single crystal to an amount of −
0.3 mm/min to 0.3 mm/min. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Application NumberUS10/371,493Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current117/13CPC Class CodesC30B 15/00 Single-crystal growth by pu...C30B 29/06 Silicon
