Conductive silicon nitride composite sintered body and a process for the production thereof

• US 20030155555A1
• Filed: 06/17/2002
• Published: 08/21/2003
• Est. Priority Date: 01/30/2002
• Status: Active Grant

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Yoshimura, Masashi
• Granted Patent: US 6,911,162 B2
• Time in Patent Office: Days
• US Class Current: 252/500
• CPC Class Codes: C04B 35/591 obtained by reaction sintering

Abstract

A conductive silicon nitride composite sintered body having an average grain size of 200 nm or less and whose relative roughness (Ra) after electric discharge machining is 0.6 μm or less can be obtained by grinding/mixing a silicon nitride powder and a metal powder together until the average particle size of the silicon nitride powder becomes 30 to 60 nm, and subsequently by molding and sintering. With the contexture that is characteristic of the present invention, it is possible to obtain a conductive silicon nitride composite sintered body having electric conductive particles of 5 to 60 volume percent that is capable of electric discharge machining.

Claims

1. A conductive silicon nitride composite sintered body comprising

silicon nitride and metal nitride as its main components,

said components each having an average grain size of 200 nm or less,

said sintered body including the metal nitride of 5 to 60% by volume,

said sintered body including, in an arbitrarily selected section thereof, a region where the area ratio of the metal nitride is within a 2/3 power ratio of volume % of the metal nitride ±

10% at a region of 10 μ

m wide and 10 μ

m long and where the area ratio of the metal nitride is not within a 2/3 power ratio of volume % of the metal nitride ±

10% at a region of 2 μ

m wide and 2 μ

m long.

3. A conductive silicon nitride composite sintered body according to claim 1, wherein a metal of said metal nitride is at least one kind of element selected from Groups IVa, Va and VIa of the Periodic Table.

5. A conductive silicon nitride composite sintered body according to claim 3, wherein the metal of said metal nitride is Ti or Ta.

2. A conductive silicon nitride composite sintered body comprising

silicon nitride and metal nitride as its main components,

said components each having an average grain size of 200 nm or less,

said sintered body including the metal nitride of 5 to 60% by volume,

a discharged surface of said sintered body having the relative roughness (Ra) of 0.6 μ

m or less after electric discharge machining.

4. A conductive silicon nitride composite sintered body according to claim 2, wherein a metal of said metal nitride is at least one kind of element selected from Groups IVa, Va and VIa of the Periodic Table.

6. A conductive silicon nitride composite sintered body according to claim 4, wherein the metal of said metal nitride is Ti or Ta.

7. A process for producing a conductive silicon nitride composite sintered body, comprising the steps of:

preparing a silicon nitride powder, a powder of sintering aids and a metal powder;

grinding/mixing these powders until the average particle size of the silicon nitride powder becomes in a range from 30 to 60 nm so as to obtain a mixed powder;

molding the mixed powder to make a molded body; and

sintering the molded body in a non-oxidative atmosphere to make a sintered body.

8. A process for producing a conductive silicon nitride composite sintered body according to claim 7, wherein said metal is at least one kind of element selected from Groups IVa, Va and VIa.

9. A process for producing a conductive silicon nitride composite sintered body according to claim 8, wherein said metal is Ti or Ta.