Active matrix type organic electroluminescent display and method of manufacturing the same

• US 20030155860A1
• Filed: 02/11/2003
• Published: 08/21/2003
• Est. Priority Date: 02/20/2002
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Joon-Hoo, Choi, Beom-Rak
• Application Number:
  US10/364,035
• Publication Number:
  US 20030155860A1
• Time in Patent Office: Days
• US Class Current: 313/498
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers

Abstract

Disclosed is an active matrix type organic electroluminescent display and method of manufacturing the same. A black matrix is formed on substantially an entire surface of a substrate except for a portion on which a pixel electrode region is formed. The substrate includes metal interconnections for driving thin film transistors, a pixel electrode connected with the thin film transistors and an organic electroluminescent layer formed on the pixel electrode. By the above structure, reflection of an external light from a non-luminescent region except for the pixel electrode is minimized to thereby obtain a high contrast ratio.

Claims

1. An active matrix type organic electroluminescent display comprising:

a substrate including a thin film transistor, metal interconnections for driving the thin film transistor, a pixel electrode connected with the thin film transistor, and an organic electroluminescent layer formed on the pixel electrode; and

a black matrix formed on substantially an entire surface of the substrate except for a portion on which the pixel electrode region is formed.

2. The active matrix type organic electroluminescent display as claimed in claim 1, wherein the black matrix is formed below the thin film transistor and the metal interconnections.

3. The active matrix type organic electroluminescent display as claimed in claim 2, further comprising a thermal diffusion-barrier layer formed on the black matrix.

4. The active matrix type organic electroluminescent display as claimed in claim 1, wherein the black matrix includes a metal oxide layer and a metal layer stacked on the metal oxide layer.

5. The active matrix type organic electroluminescent display as claimed in claim 4, wherein the black matrix comprises any one selected from the group consisting of chromium oxide/chromium, nickel oxide/nickel, and iron oxide/iron.

6. An active matrix type organic electroluminescent display comprising:

a substrate;

a black matrix formed on substantially an entire surface of the substrate;

a thin film transistor formed on the black matrix and having an active pattern, a gate electrode, and source/drain electrodes;

a passivation layer formed on the thin film transistor, the black matrix, and the substrate;

a pixel electrode formed on the passivation layer, the pixel electrode being connected with the thin film transistor; and

an organic electroluminescent layer formed on the pixel electrode.

7. The active matrix type organic electroluminescent display as claimed in claim 6, wherein the black matrix is formed on substantially the entire surface of the substrate except for a pixel electrode region.

8. The active matrix type organic electroluminescent display as claimed in claim 7, further comprising a thermal diffusion-barrier layer formed between the black matrix and the thin film transistor.

9. The active matrix type organic electroluminescent display as claimed in claim 7, wherein the active pattern of the thin film transistor is formed at a region that is spaced apart by no less than about 1 μ

m from an edge of the black matrix.

10. A method of manufacturing an active matrix type organic electroluminescent display, the method comprising the steps of:

forming a black matrix on substantially an entire surface of a substrate;

forming a thin film transistor on the black matrix and the substrate, the thin film transistor including an active pattern, a gate electrode, and source/drain electrodes;

forming a passivation layer on the thin film transistor, the black matrix, and the substrate;

forming a pixel electrode on the passivation layer to connect with the thin film transistor; and

forming an organic electroluminescent layer on the pixel electrode.

11. The method as claimed in claim 10, wherein the method further comprises forming the black matrix on substantially the entire surface of the substrate except for a pixel electrode region.

12. The method as claimed in claim 11, prior to the step of forming the thin film transistor, further comprising a step of forming a thermal diffusion-barrier layer on the black matrix and the substrate.

13. The method as claimed in claim 11, wherein the step of forming the active pattern of the thin film transistor comprises the steps of:

depositing an active layer on the black matrix and the substrate;

crystallizing the active layer by applying an energy capable of compensating for a heat loss through the black matrix; and

patterning the active layer to form the active pattern at a region that is spaced apart by no less than about 1 μ

m from an edge of the black matrix.

14. The method as claimed in claim 11, wherein the black matrix comprises a metal oxide layer and a metal layer stacked on the metal oxide layer.

15. The method as claimed in claim 11, wherein the black matrix comprises any one selected from a group consisting of chromium oxide/chromium, nickel oxide/nickel, and iron oxide/iron.

16. An active matrix type organic electroluminescent display comprising:

a substrate including a thin film transistor, metal interconnections for driving the thin film transistor, a pixel electrode connected with the thin film transistor, and an organic electroluminescent layer formed on the pixel electrode; and

a low reflective pattern formed on a surface of the substrate except for a portion on which the pixel electrode region is formed.

17. The active matrix type organic electroluminescent display as claimed in claim 16, wherein the low reflective pattern is a black matrix.

18. The active matrix organic electroluminescent display as claimed in claim 16, wherein the low reflective pattern comprises a material having a low reflectivity of less than about 5%.

19. The active matrix type organic electroluminescent display as claimed in claim 16, wherein the low reflective pattern includes a metal oxide layer and a metal layer stacked on the metal oxide layer.

20. An active matrix type organic electroluminescent display comprising:

a substrate;

a low reflective pattern formed on substantially a surface of the substrate except for a pixel electrode region;

a thin film transistor formed on the low reflective pattern and having an active pattern, a gate electrode, and source/drain electrodes;

a passivation layer formed on the thin film transistor, the low reflective pattern, and the substrate;

a pixel electrode formed on the passivation layer, the pixel electrode being connected with the thin film transistor; and

an organic electroluminescent layer formed on the pixel electrode.

21. The active matrix type organic electroluminescent display as claimed in claim 20, wherein the low reflective pattern comprises a material having a low reflectivity of less than about 5%.

22. A method of manufacturing an active matrix type organic electroluminescent display, the method comprising:

forming a low reflective pattern on substantially a surface of a substrate except for a pixel electrode region;

forming a thin film transistor on the low reflective pattern and the substrate, the thin film transistor including an active pattern, a gate electrode, and source/drain electrodes;

forming a passivation layer on the thin film transistor, the low reflective pattern, and the substrate;

forming a pixel electrode on the passivation layer to connect with the thin film transistor; and

forming an organic electroluminescent layer on the pixel electrode.

23. The method as claimed in claim 22, wherein the low reflective pattern comprises a material having a low reflectivity of less than about 5%.

24. The method as claimed in claim 22, wherein the low reflective pattern comprises a metal oxide layer and a metal layer stacked on the metal oxide layer.