Radiation-emitting semiconductor component with a vertical emission direction and fabrication method for producing the semiconductor component

• US 20030160257A1
• Filed: 02/26/2003
• Published: 08/28/2003
• Est. Priority Date: 02/26/2002
• Status: Abandoned Application

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Lugauer, Hans-Jurgen, Harle, Volker, Bader, Stefan, Bruderl, Georg
• Application Number:
  US10/375,764
• Publication Number:
  US 20030160257A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/105 with a resonant cavity structure

Abstract

A radiation-emitting semiconductor component with a vertical emission direction, has a substrate, a first reflector layer, and a semiconductor layer sequence based on InGaN disposed on the first reflection layer. The semiconductor layer sequence contains a radiation-generating active layer. A second reflector layer is disposed on the semiconductor layer sequence and forms, together with the first reflector, a resonator disposed vertically with respect to the main direction of extent of the semiconductor layer sequence and whose axis represents the vertical emission direction of the semiconductor component. The second reflector layer is at least partly transmissive for radiation generated by the active layer and the radiation is coupled out through the second reflector layer. The substrate contains an electrically conductive material. The first reflector layer is a doped, epitaxially grown, distributed Bragg reflector layer, so that a simple electrical contact connection of the semiconductor component is possible without complex construction.

Claims

1. A radiation-emitting semiconductor component having a vertical emission direction, comprising:

a substrate containing an electrically conductive material;

a first reflector layer disposed on the substrate, said first reflector layer being a doped, epitaxially grown, distributed Bragg reflector layer;

a semiconductor layer sequence based on a nitride compound semiconductor and disposed on said first reflector layer, said semiconductor layer sequence containing a radiation-generating active layer; and

a second reflector layer disposed on said semiconductor layer sequence, and forms, together with said first reflector layer, a resonator disposed vertically with respect to a main direction of extent of said semiconductor layer sequence, said resonator having an axis representing the vertical emission direction of the radiation -emitting semiconductor component, said second reflector layer being at least partly transmissive for radiation generated by said radiation-generating active layer and the radiation generated being coupled out from the radiation-emitting semiconductor component through said second reflector layer.

2. The semiconductor component according to claim 1, wherein said substrate contains SiC.

3. The semiconductor component according to claim 1, wherein said first reflector layer is based on InAlGaN.

4. The semiconductor component according to claim 1, wherein said second reflector layer is a doped, epitaxially grown, distributed Bragg reflector layer.

5. The semiconductor component according to claim 4, wherein said first reflector layer is an n-doped, distributed Bragg reflector layer and said second reflector layer is a p-doped, distributed Bragg reflector layer.

6. The semiconductor component according to claim 1, wherein said second reflector layer is a metallic reflector layer.

7. The semiconductor component according to claim 1, wherein said second reflector layer is a dielectric reflector layer.

8. The semiconductor component according to claim 1, wherein said first reflector layer has a reflectivity of between about 70% and about 95%.

9. The semiconductor component according to claim 1, wherein said second reflector layer has a reflectivity of between about 60% and about 80%.

10. The semiconductor component according to claim 1, further comprising:

an insulation layer with a radiation coupling-out window formed therein, said insulation layer disposed between said semiconductor layer sequence and said second reflector layer; and

an electrically conductive contact layer disposed in said radiation coupling-out window.

11. The semiconductor component according to claim 1, further comprising a buffer layer made of an electrically conductive material disposed between said substrate and said first reflector layer.

12. The semiconductor component according to claim 1, wherein said nitride compound semiconductor is In_xGa_yN_1-x-y.

13. A method for fabricating a radiation-emitting semiconductor component with a vertical emission direction, which comprises the steps of:

providing a substrate formed of an electrically conductive material;

growing a first reflector layer on the substrate, the first reflector being a doped, distributed Bragg reflector layer grown epitaxially on the substrate;

applying a semiconductor layer sequence based on In_xGa_yN_1-x-y to the first reflector layer, the semiconductor layer sequence containing a radiation-generating active layer; and

applying a second reflector layer to the semiconductor layer sequence, the second reflector layer together with the first reflector layer forms a resonator disposed vertically with respect to a main direction of an extent of the semiconductor layer sequence, the resonator having an axis representing the vertical emission direction of the radiation-emitting semiconductor component, the second reflector layer being at least partly transmissive for radiation generated by the radiation-generating active layer and the radiation generated being able to be coupled out from the radiation-emitting semiconductor component through the second reflector layer.

14. The method according to claim 13, which further comprises forming the second reflector layer as a doped, distributed Bragg reflector layer grown epitaxially on the semiconductor layer sequence.

15. The method according to claim 13, which further comprises forming the second reflector layer as a metallic reflector layer.

16. The method according to claim 13, which further comprises forming the second reflector layer as a dielectric reflector layer.

17. The method according to claim 13, which further comprises:

applying an insulation layer having a radiation coupling-out window to the semiconductor layer sequence before the second reflector layer is applied to the semiconductor layer sequence; and

introducing an electrically conductive contact layer into the radiation coupling-out window.

18. The method according to claim 13, which further comprises applying a buffer layer made of an electrically conductive material to the substrate before the first reflector layer grown on the substrate.