Electronic part and method of producing the same

• US 20030160258A1
• Filed: 12/03/2002
• Published: 08/28/2003
• Est. Priority Date: 12/03/2001
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Oohata, Toyoharu
• Granted Patent: US 6,770,960 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01049 Indium [In]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1033 : Gallium nitride [GaN]
• CPC Class Codes: H01L 2924/10349 : Aluminium gallium indium phosphide [AlGaInP]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01S 5/02 : Structural details or components not essential to laser action
• CPC Class Codes: H01S 5/02234 : Resin-filled housings; the housings being made of resin
• CPC Class Codes: H01S 5/02315 : Support members, e.g. bases or carriers
• CPC Class Codes: H01S 5/0233 : Mounting configuration of laser chips
• CPC Class Codes: H01S 5/0235 : Method for mounting laser chips
• CPC Class Codes: H01S 5/04253 : having specific optical properties, e.g. transparent electrodes
• CPC Class Codes: H01S 5/04256 : characterised by the configuration
• CPC Class Codes: H01S 5/04257 : having positive and negative electrodes on the same side of the substrate
• CPC Class Codes: H01S 5/183 : having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/32325 : red laser based on InGaP

Abstract

A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of the semiconductor layer opposite to the first surface, and lead-out electrodes connected to the electrodes are led out to the same surface side of the insulating material. The semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device. The insulating material is, for example, a resin.

Claims

1. An electronic part wherein a semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where said seed crystal substrate is removed, electrodes are provided respectively on a first surface of said semiconductor crystal layer and a second surface of said semiconductor crystal layer opposite to said first surface, and lead-out electrodes connected to said electrodes are led out to the same surface side of said insulating material.

2. An electronic part as set forth in claim 1, wherein said semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device.

3. An electronic part as set forth in claim 2 wherein said semiconductor light-emitting device or semiconductor electronic device is at least one selected from the group constituting of a light-emitting diode, a laser diode, a photo diode, a transistor, and a device obtained by integration of these.

4. An electronic part as set forth in claim 1, wherein said insulating material is a resin.

5. An electronic part as set forth in claim 1, wherein said first surface or second surface of said semiconductor crystal layer is exposed from said insulating material.

6. An electronic part as set forth in claim 1, wherein said electrodes provided on said first surface and said second surface of said semiconductor crystal layer are formed at different positions in the same plane.

7. An electronic part as set forth in claim 1, wherein said seed crystal substrate is a sapphire substrate, and said semiconductor crystal layer is a crystal of a Group III compound.

8. An electronic part as set forth in claim 7, wherein said semiconductor crystal layer has a {1-101} crystal plane formed by an epitaxial growth process.

9. An electronic part as set forth in claim 1, wherein said seed crystal substrate is gallium arsenide or indium phosphide, and said semiconductor crystal layer is aluminum gallium indium phosphide or aluminum gallium indium arsenide.

10. An electronic part as set forth in claim 1, wherein said seed crystal substrate is silicon, and said semiconductor crystal layer is silicon crystal formed through a silicon oxide layer.

11. A method of producing an electronic part, comprising the steps of epitaxially growing a semiconductor crystal layer on a seed crystal substrate, embedding said semiconductor crystal layer into an insulating material and removing said seed crystal substrate, forming an electrode connected to a surface on one side of said semiconductor crystal layer, transferring said semiconductor crystal layer embedded in said insulating material onto a support substrate, forming an electrode connected to a surface on the opposite side of said semiconductor crystal layer, and forming lead-out electrodes connected to said electrodes in the manner of leading out to the same surface side of said insulating material.

12. A method of producing an electronic part as set forth in claim 11, wherein a sapphire substrate is used as said seed crystal substrate, a crystal of a Group III compound is used as said semiconductor crystal layer, and irradiation with laser light is used for removal of said seed crystal substrate.

13. A method of producing an electronic part as set forth in claim 11, wherein gallium arsenide or indium phosphide is used as said seed crystal substrate, aluminum gallium indium phosphide or aluminum gallium indium arsenide is used as said semiconductor crystal layer, and wet type selective etching is used for removal of said seed crystal substrate.

14. A method of producing an electronic part as set forth in claim 11, wherein silicon is used as said seed crystal substrate, a silicon crystal formed through a silicon oxide layer is used as said semiconductor crystal layer, and wet type selective etching is used for removal of said seed crystal substrate.

15. An image display system comprising electronic parts containing light-emitting devices and arranged in a matrix form on a substrate, each of said electronic parts constituting a pixel, wherein

said electronic parts each have a structure in which a semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate and functioning as a light-emitting device is embedded in an insulating material in the condition where said seed crystal substrate is removed, and electrodes are provided on a first surface of said semiconductor crystal layer and a second surface of said semiconductor crystal layer opposite to said first surface,

each of said electronic parts is covered with an insulating layer, and lead-out electrodes connected to said electrodes of said semiconductor crystal layer contained in said electronic parts are led out to the face side of said insulating layer.

16. A method of manufacturing an image display system comprising electronic parts containing light-emitting devices and arranged in a matrix form on a substrate, each of said electronic parts constituting a pixel, wherein said method comprises:

a step of epitaxially growing semiconductor crystal layers functioning as light-emitting devices on a seed crystal substrate, a first transfer step of transferring said semiconductor crystal layers onto a first temporary holding member so that said semiconductor crystal layers are spaced wider apart than they have been arranged on said seed crystal substrate and embedding said semiconductor crystal layers in an insulating material, a sep of forming electrodes connected to surfaces on one side of said semiconductor crystal layers, a second transfer step of transferring said semiconductor crystal layers embedded in said insulating material onto a second temporary holding member, a step of forming electrodes connected to surfaces on the opposite side of said semiconductor crystal layers, a sep of cutting said insulating material with said semiconductor crystal layers embedded therein to separate the cut bodies as electronic parts, a third transfer step of transferring said electronic parts held on said second temporary holding member onto a second substrate while spacing said electronic parts further wider apart, a step of forming an insulating layer so as to cover each of said electronic parts, and forming lead-out electrodes connected to said electrodes of said semiconductor crystal layers contained in said electronic parts in the manner of leading out to the face side of said insulating layer.