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Cyclical deposition of tungsten nitride for metal oxide gate electrode

  • US 20030161952A1
  • Filed: 02/26/2002
  • Published: 08/28/2003
  • Est. Priority Date: 02/26/2002
  • Status: Active Grant
First Claim
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1. A method for forming a tungsten nitride layer, comprising:

  • alternately pulsing a tungsten-containing compound and a nitrogen-containing compound until a tungsten nitride layer having a thickness of about 100 angstroms or less is formed.

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