Cyclical deposition of tungsten nitride for metal oxide gate electrode
First Claim
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1. A method for forming a tungsten nitride layer, comprising:
- alternately pulsing a tungsten-containing compound and a nitrogen-containing compound until a tungsten nitride layer having a thickness of about 100 angstroms or less is formed.
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Abstract
A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.
223 Citations
64 Claims
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1. A method for forming a tungsten nitride layer, comprising:
alternately pulsing a tungsten-containing compound and a nitrogen-containing compound until a tungsten nitride layer having a thickness of about 100 angstroms or less is formed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for forming a tungsten layer, comprising:
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depositing a tungsten nitride barrier layer by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound; and
depositing a tungsten layer by alternately pulsing a second tungsten-containing compound and a reducing compound. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A method for forming a tungsten layer, comprising:
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depositing a tungsten nitride barrier layer by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound; and
depositing a tungsten layer on the barrier layer. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. A method for forming a metal gate electrode, comprising:
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heating a wafer having a polysilicon layer disposed thereon to a temperature of about 550°
C. or more;
forming a chlorine terminated surface by exposing the polysilicon layer to a chlorine-containing compound;
depositing a tungsten nitride barrier layer over the polysilicon layer, wherein the tungsten nitride barrier layer is formed by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound until a tungsten nitride layer having a thickness less than about 50 angstroms is deposited; and
depositing a tungsten layer on the tungsten nitride barrier layer. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57)
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58. A method for forming a metal gate electrode on a wafer, comprising:
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heating a wafer having a polysilicon layer disposed thereon to a temperature of about 550°
C. or more;
forming a chlorine terminated surface by exposing the polysilicon layer to a chlorine-containing compound;
reducing the chlorine terminated surface by exposing the polysilicon layer to a nitrogen-containing compound; and
then depositing a tungsten layer over the polysilicon layer, wherein the tungsten layer is formed by alternately pulsing a tungsten-containing compound and a reducing compound. - View Dependent Claims (59, 60, 61, 62, 63, 64)
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Specification