Precursor compositions for the deposition of passive electronic features

• US 20030161959A1
• Filed: 11/01/2002
• Published: 08/28/2003
• Est. Priority Date: 11/02/2001
• Status: Active Grant

• Current Assignee: Cabot Corporation
• Original Assignee: Cabot Corporation
• Inventors: Vanheusden, Karel, Kunze, Klaus, Atanassova, Paolina, Hampden-Smith, Mark J., Kodas, Toivo T., Stump, Aaron D., Schult, Allen B., Denham, Hugh
• Granted Patent: US 7,553,512 B2
• Time in Patent Office: Days
• US Class Current: 427/376.2
• CPC Class Codes: B33Y 10/00 Processes of additive manufacturing
• CPC Class Codes: B33Y 80/00 Products made by additive manufacturing
• CPC Class Codes: C09D 11/30 Inkjet printing inks
• CPC Class Codes: H01C 17/06506 Precursor compositions therefor, e.g. pastes, inks, glass frits
• CPC Class Codes: H01C 17/06533 composed of oxides
• CPC Class Codes: H01C 17/06573 characterised by the permanent binder
• CPC Class Codes: H01L 21/02197 the material having a perovskite structure, e.g. BaTiO3
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/31691 with perovskite structure
• CPC Class Codes: H05K 1/0346 containing N
• CPC Class Codes: H05K 1/097 Inks comprising nanoparticles and specially adapted for being sintered at low temperature H05K1/095 takes precedence
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 1/167 incorporating printed resistors
• CPC Class Codes: H05K 2203/013 Inkjet printing, e.g. for printing insulating material or resist using ink-jet printing to form a conductive pattern H05K3/125
• CPC Class Codes: H05K 2203/1142 Conversion of conductive material into insulating material or into dissolvable compound
• CPC Class Codes: H05K 2203/121 Metallo-organic compounds
• CPC Class Codes: H05K 2203/125 Inorganic compounds, e.g. silver salt
• CPC Class Codes: H05K 3/105 by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
• CPC Class Codes: H05K 3/125 by ink-jet printing

Abstract

Precursor compositions for the fabrication of electronic features such as resistors and capacitors. The precursor compositions are formulated to have a low conversion temperature, such as not greater than about 350° C., thereby enabling the fabrication of such electronic features on a variety of substrates, including organic substrates such as polymer substrates.

Claims

1. A method for fabricating an inorganic resistor on an organic substrate, comprising the steps of:

a) applying a flowable precursor composition to an organic substrate wherein said precursor composition comprises a molecular precursor to a conductive phase and a powder of an insulating material;

b) heating said substrate to a temperature of not greater than about 350°

C. to convert said molecular precursor to said conductive phase and form a resistor wherein said resistor has a resistivity of at least about 100 μ

Ω

-cm.

2. A method as recited in claim 1, wherein said heating step comprises heating to a temperature of not greater than about 300°

C.

3. A method as recited in claim 1, wherein said heating step comprises heating to a temperature of not greater than about 250°

C.

4. A method as recited in claim 1, wherein said heating step comprises heating to a temperature of not greater than about 200°

C.

5. A method as recited in claim 1, wherein said heating step comprises heating to a temperature of not greater than about 150°

C.

6. A method as recited in claim 1, wherein said molecular precursor comprises silver metal.

7. A method as recited in claim 1, wherein said molecular precursor comprises a metal selected from the group consisting of silver, copper and nickel.

8. A method as recited in claim 1, wherein said insulating material is selected from the group consisting of silica, alumina, titania and a glass.

9. A method as recited in claim 1, wherein said insulator particles have an average particle size of not greater than about 100 nanometers.

10. A method as he said in claim 1, wherein said step of applying a flowable precursor composition comprises depositing said a flowable precursor composition using a syringe.

11. In method as recited in claim 1, wherein said substrate is a polyimide substrate.

12. A method as recited in claim 1, wherein said precursor composition has a viscosity of at least about 10,000 centipoise.

13. A method as recited in claim 1, wherein said resistor has a resistivity of at least about 1000 μ

Ω

-cm.

14. A method as recited in claim 1, wherein said resistor has a resistivity of at least about 10,000μ

Ω

-cm.

15. A method as recited in claim 1, wherein said resistor has a resistivity of at least about 100,000 μ

Ω

-cm.

16. A method as recited in claim 1, wherein said resistor is a component of a circuit comprising organic transistors.

17. A method as recited in claim 1, wherein said resistor is a component of a display backplane.

18. A method as recited in claim 1, wherein said resistor is a component of a circuit board.

19. A method as recited in claim 1, wherein said resistor is a component of an RF tag.

20. A method as recited in claim 1, wherein said resistor is a component of a smart card.

21. A method for fabricating an inorganic resistor on an organic substrate, comprising the steps of:

a) applying a flowable precursor composition to an organic substrate wherein said precursor composition comprises a molecular precursor to a conductive phase and a powder of a resistive material;

b) heating said substrate to a temperature of not greater than about 350°

C. to convert said molecular precursor to said conductive phase and form a resistor wherein said resistor has a resistivity of at least about 100 μ

Ω

-cm.

22. A method as recited in claim 21, wherein said heating step comprises heating to a temperature of not greater than about 300°

C.

23. A method as recited in claim 21, wherein said heating step comprises heating to a temperature of not greater than about 250°

C.

24. A method as recited in claim 21, wherein said heating step comprises heating to a temperature of not greater than about 200°

C.

25. A method as recited in claim 21, wherein said heating step comprises heating to a temperature of not greater than about 150°

C.

26. A method as recited in claim 21, wherein said molecular precursor comprises silver metal.

27. A method as recited in claim 21, wherein said molecular precursor comprises a metal selected from the group consisting of silver, copper and nickel.

28. A method as recited in claim 21, wherein said resistive material is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, indium oxide, antimony oxide and zinc oxide.

29. A method as recited in claim 21, wherein said resistive particles have an average particle size of not greater than about 100 nanometers.

30. A method as he said in claim 21, wherein said step of applying a flowable precursor composition comprises depositing said a flowable precursor composition using a syringe.

31. In method as recited in claim 21, wherein said substrate is a polyimide substrate.

32. A method as recited in claim 21, wherein said precursor composition has a viscosity of at least about 10,000 centipoise.

33. A method as recited in claim 21, wherein said resistor has a resistivity of at least about 1000 μ

Ω

-cm.

34. A method as recited in claim 21, wherein said resistor has a resistivity of at least about 10,000 μ

Ω

-cm.

35. A method as recited in claim 21, wherein said resistor has a resistivity of at least about 100,000 μ

Ω

-cm.

36. A method as recited in claim 21, wherein said resistor is a component of a circuit comprising organic transistors.

37. A method as recited in claim 21, wherein said resistor is a component of a display backplane.

38. A method as recited in claim 21, wherein said resistor is a component of a circuit board.

39. A method as recited in claim 21, wherein said resistor is a component of an RF tag.

40. A method as recited in claim 21, wherein said resistor is a component of a smart card.

41. A method for fabricating an inorganic resistor on an organic substrate, comprising the steps of:

a) applying a flowable precursor composition to an organic substrate wherein said precursor composition comprises a molecular precursor to a resistive phase and a powder of a conductive material;

b) heating said substrate to a temperature of not greater than about 350°

C. to convert said molecular precursor to said resistive phase and form a resistor wherein said resistor has a resistivity of at least about 1000 μ

Ω

-cm.

42. A method as recited in claim 41, wherein said heating step comprises heating to a temperature of not greater than about 300°

C.

43. A method as recited in claim 41, wherein said heating step comprises heating to a temperature of not greater than about 250°

C.

44. A method as recited in claim 41, wherein said heating step comprises heating to a temperature of not greater than about 200°

C.

45. A method as recited in claim 41, wherein said conductive powder comprises silver metal.

46. A method as recited in claim 41, wherein said conductive powder comprises a metal selected from the group consisting of silver, copper and nickel.

47. A method as recited in claim 41, wherein said resistive phase material is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, indium oxide, antimony oxide and zinc oxide.

48. A method as recited in claim 41, wherein said conductive particles have an average particle size of not greater than about 100 nanometers.

49. A method as he said in claim 41, wherein said step of applying a flowable precursor composition comprises depositing said a flowable precursor composition using a syringe.

50. In method as recited in claim 41, wherein said substrate is a polyimide substrate.

51. A method as recited in claim 41, wherein said precursor composition ha a viscosity of at least about 10,000 centipoise.

52. A method as recited in claim 41, wherein said resistor has a resistivity of at least about 10,000 μ

Ω

-cm.

53. A method as recited in claim 41, wherein said resistor has a resistivity of at least about 100,000 μ

Ω

-cm.

54. A method as recited in claim 41, wherein said resistor is a component of a circuit comprising organic transistors.

55. A method as recited in claim 41, wherein said resistor is a component of a display backplane.

56. A method as recited in claim 41, wherein said resistor is a component of a circuit board.

57. A method as recited in claim 41, wherein said resistor is a component of an RF tag.

58. A method as recited in claim 41, wherein said resistor is a component of a smart card.

59. A method for fabricating an inorganic resistor on an organic substrate, comprising the steps of:

a) applying a flowable precursor composition to an organic substrate wherein said precursor composition comprises a molecular precursor to a resistive phase and a powder of a resistive material;

b) heating said substrate to a temperature of not greater than about 350°

C. to convert said molecular precursor to said resistive phase and form a resistor wherein said resistor has a resistivity of at least about 100,000 μ

Ω

-cm.

60. A method as recited in claim 59, wherein said heating step comprises heating to a temperature of not greater than about 300°

C.

61. A method as recited in claim 59, wherein said heating step comprises heating to a temperature of not greater than about 250°

C.

62. A method as recited in claim 59, wherein said heating step comprises heating to a temperature of not greater than about 200°

C.

63. A method as recited in claim 59, wherein said molecular precursor comprises a precursor to a material selected from the group consisting of semiconducting oxide, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, indium oxide, antimony oxide and zinc oxide.

64. A method as recited in claim 59, wherein said resistive material is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, indium oxide, antimony oxide and zinc oxide.

65. A method as recited in claim 59, wherein said resistive particles have an average particle size of not greater than about 100 nanometers.

66. A method as he said in claim 59, wherein said step of applying a flowable precursor composition comprises depositing said a flowable precursor composition using a syringe.

67. In method as recited in claim 59, wherein said substrate is a polyimide substrate.

68. A method as recited in claim 59, wherein said precursor composition has a viscosity of at least about 10,000 centipoise.

69. A method as recited in claim 59, wherein said resistor has a resistivity of at least about 1,000,000 μ

Ω

-cm.

70. A method as recited in claim 59, wherein said resistor is a component of a circuit comprising organic transistors.

71. A method as recited in claim 59, wherein said resistor is a component of a display backplane.

72. A method as recited in claim 59, wherein said resistor is a component of a circuit board.

73. A method as recited in claim 59, wherein said resistor is a component of an RF tag.

74. A method as recited in claim 59, wherein said resistor is a component of a smart card.

75. A method for fabricating an inorganic resistor on an organic substrate, comprising the steps of:

a) applying a flowable precursor composition to an organic substrate wherein said precursor composition comprises a molecular precursor to a resistive phase and a powder of an insulative material;

b) heating said substrate to a temperature of not greater than about 350°

C. to convert said molecular precursor to said resistive phase and form a resistor wherein said resistor has a resistivity of at least about 10,000 μ

Ω

-cm.

76. A method as recited in claim 75, wherein said heating step comprises heating to a temperature of not greater than about 300°

C.

77. A method as recited in claim 75, wherein said heating step comprises heating to a temperature of not greater than about 250°

C.

78. A method as recited in claim 75, wherein said heating step comprises heating to a temperature of not greater than about 200°

C.

79. A method as recited in claim 75, wherein said insulative powder comprises a material selected from the group consisting of silica, alumina and titania.

80. A method as recited in claim 75, wherein said resistive phase material is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, indium oxide, antimony oxide and zinc oxide.

81. A method as recited in claim 75, wherein said insulative particles have an average particle size of not greater than about 100 nanometers.

82. A method as he said in claim 75, wherein said step of applying a flowable precursor composition comprises depositing said a flowable precursor composition using a syringe.

83. In method as recited in claim 75, wherein said substrate is a polyimide substrate.

84. A method as recited in claim 75, wherein said precursor composition ha a viscosity of at least about 10,000 centipoise.

85. A method as recited in claim 75, wherein said resistor has a resistivity of at least about 100,000 μ

Ω

-cm.

86. A method as recited in claim 75, wherein said resistor is a component of a circuit comprising organic transistors.

87. A method as recited in claim 75, wherein said resistor is a component of a display backplane.

88. A method as recited in claim 75, wherein said resistor is a component of a circuit board.

89. A method as recited in claim 75, wherein said resistor is a component of an RF tag.

90. A method as recited in claim 75, wherein said resistor is a component of a smart card.

91. A method for fabricating an inorganic resistor on an organic substrate, comprising the steps of:

a) applying a flowable precursor composition to an organic substrate wherein said precursor composition comprises a molecular precursor to an insulative phase and a powder of a conductive material;

b) heating said substrate to a temperature of not greater than about 350°

C. to convert said molecular precursor to said insulative phase and form a resistor wherein said resistor has a resistivity of at least about 10,000 μ

Ω

-cm.

92. A method as recited in claim 91, wherein said heating step comprises heating to a temperature of not greater than about 300°

C.

93. A method as recited in claim 91, wherein said heating step comprises heating to a temperature of not greater than about 250°

C.

94. A method as recited in claim 91, wherein said heating step comprises heating to a temperature of not greater than about 200°

C.

95. A method as recited in claim 91, wherein said conductive powder comprises silver metal.

96. A method as recited in claim 91, wherein said conductive powder comprises a metal selected from the group consisting of silver, copper and nickel.

97. A method as recited in claim 91, wherein said insulative phase material is selected from the group consisting of silica, alumina, titania and a glass.

98. A method as recited in claim 91, wherein said conductive particles have an average particle size of not greater than about 100 nanometers.

99. A method as he said in claim 91, wherein said step of applying a flowable precursor composition comprises depositing said a flowable precursor composition using a syringe.

100. In method as recited in claim 91, wherein said substrate is a polyimide substrate.

101. A method as recited in claim 91, wherein said precursor composition ha a viscosity of at least about 10,000 centipoise.

102. A method as recited in claim 91, wherein said resistor has a resistivity of at least about 100,000 μ

Ω

-cm.

103. A method as recited in claim 91, wherein said resistor is a component of a circuit comprising organic transistors.

104. A method as recited in claim 91, wherein said resistor is a component of a display backplane.

105. A method as recited in claim 91, wherein said resistor is a component of a circuit board.

106. A method as recited in claim 91, wherein said resistor is a component of an RF tag.

107. A method as recited in claim 91, wherein said resistor is a component of a smart card.

108. A method for fabricating an inorganic resistor on an organic substrate, comprising the steps of:

a) applying a flowable precursor composition to an organic substrate wherein said precursor composition comprises a molecular precursor to an insulative phase and a powder of a resistive material;

b) heating said substrate to a temperature of not greater than about 350°

C. to convert said molecular precursor to said insulative phase and form a resistor wherein said resistor has a resistivity of at least about 100,000 μ

Ω

-cm.

109. A method as recited in claim 108, wherein said heating step comprises heating to a temperature of not greater than about 300°

C.

110. A method as recited in claim 108, wherein said heating step comprises heating to a temperature of not greater than about 250°

C.

111. A method as recited in claim 108, wherein said heating step comprises heating to a temperature of not greater than about 200°

C.

112. A method as recited in claim 108, wherein said molecular precursor comprises a precursor to a material selected from the group consisting of silica, alumina, titania and glass.

113. A method as recited in claim 108, wherein said resistive material is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, indium oxide, antimony oxide and zinc oxide.

114. A method as recited in claim 108, wherein said resistive particles have an average particle size of not greater than about 100 nanometers.

115. A method as he said in claim 108, wherein said step of applying a flowable precursor composition comprises depositing said a flowable precursor composition using a syringe.

116. In method as recited in claim 108, wherein said substrate is a polyimide substrate.

117. A method as recited in claim 108, wherein said precursor composition has a viscosity of at least about 10,000 centipoise.

118. A method as recited in claim 108, wherein said resistor has a resistivity of at least about 1,000,000 μ

Ω

-cm.

119. A method as recited in claim 108, wherein said resistor is a component of a circuit comprising organic transistors.

120. A method as recited in claim 108, wherein said resistor is a component of a display backplane.

121. A method as recited in claim 108, wherein said resistor is a component of a circuit board.

122. A method as recited in claim 108, wherein said resistor is a component of an RF tag.

123. A method as recited in claim 108, wherein said resistor is a component of a smart card.

124. A precursor composition having a viscosity of at least about 5000 centipoise, comprising:

a) a precursor solution comprising a molecular precursor compound at least partially dissolved in a solvent; and

b) an inorganic powder dispersed throughout said precursor solution, wherein said precursor composition can be converted to an inorganic resistor having a resistivity of from about 100 μ

Ω

-cm to about 50,000 μ

Ω

-cm at a temperature of not greater than about 350°

C.

125. A precursor composition as recited in claim 124, wherein said molecular precursor compound is a precursor to a metal selected from the group consisting of silver, copper and nickel.

126. A precursor composition as recited in claim 124, wherein said molecular precursor compound is a metal carboxylate compound.

127. A precursor composition as recited in claim 124, wherein said molecular precursor compound is a halogenated carboxylate compound.

128. A precursor composition as recited in claim 124, wherein said molecular precursor compound is silver trifluoroacetate.

129. A precursor composition as recited in claim 124, wherein said inorganic powder comprises a metal oxide.

130. A precursor composition as recited in claim 124, wherein said inorganic powder comprises silica.

131. A precursor composition as recited in claim 124, wherein said inorganic powder comprises titania.

132. A precursor composition as recited in claim 124, wherein said inorganic powder comprises alumina.

133. A precursor composition as recited in claim 124, wherein said inorganic powder comprises a glass.