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Method of depositing low K films

  • US 20030162410A1
  • Filed: 02/25/2003
  • Published: 08/28/2003
  • Est. Priority Date: 02/11/1998
  • Status: Active Grant
First Claim
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1. A process for depositing a low dielectric constant film, comprising decomposing one or more organosilicon compounds selected from a group consisting of octamethylcyclotetrasiloxane, 2,4,6,8-tetramethylcyclotetrasiloxane, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 2,4,6,8,10-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 2,4,6-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran, and at a RF power density of at least about 0.03 W/cm2 to deposit a film comprising silicon, oxygen, and a carbon content of at least 1% by atomic weight.

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