Method of depositing low K films
First Claim
1. A process for depositing a low dielectric constant film, comprising decomposing one or more organosilicon compounds selected from a group consisting of octamethylcyclotetrasiloxane, 2,4,6,8-tetramethylcyclotetrasiloxane, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 2,4,6,8,10-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 2,4,6-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran, and at a RF power density of at least about 0.03 W/cm2 to deposit a film comprising silicon, oxygen, and a carbon content of at least 1% by atomic weight.
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Abstract
A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
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Citations
20 Claims
- 1. A process for depositing a low dielectric constant film, comprising decomposing one or more organosilicon compounds selected from a group consisting of octamethylcyclotetrasiloxane, 2,4,6,8-tetramethylcyclotetrasiloxane, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 2,4,6,8,10-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 2,4,6-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran, and at a RF power density of at least about 0.03 W/cm2 to deposit a film comprising silicon, oxygen, and a carbon content of at least 1% by atomic weight.
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10. A process for depositing a low dielectric constant film, consisting essentially of decomposing one or more organosilicon compounds selected from the group consisting of octamethylcyclotetrasiloxane, 2,4,6,8-tetramethylcyclotetrasiloxane, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyidisiloxane, hexamethyidisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyidisiloxanyl)propane, 2,4,6,8,10-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 2,4,6-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran at a power density of greater than about 0.03 W/cm2, and a carrier gas flow rate less than or equal to a combined flow rate of the one or more organosilicon compounds at conditions sufficient to deposit a film comprising silicon, oxygen, and carbon and an atomic ratio of carbon to silicon (C:
- Si) of greater than or equal to about 1;
9. - View Dependent Claims (11, 12, 13, 14)
- Si) of greater than or equal to about 1;
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15. A process for depositing a low dielectric constant film, comprising decomposing octamethylcyclotetrasiloxane, 2,4,6,8-tetramethylcyclotetrasiloxane, or combinations thereof at a power density ranging between about 0.9 W/cm2 and about 3.2 W/cm2 at conditions sufficient to deposit a film having an atomic ratio of carbon to silicon (C:
- Si) of between about 1;
9 and less than about 1;
1. - View Dependent Claims (16, 17, 18, 19, 20)
- Si) of between about 1;
Specification