Optoelectronic component and a method for producing the same

• US 20030164502A1
• Filed: 02/24/2003
• Published: 09/04/2003
• Est. Priority Date: 05/23/2000
• Status: Abandoned Application

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Linder, norbert, Strauss, Uwe, Baur, Johannes, Sedlmeier, Reinhard, Nirschl, Ernst
• Application Number:
  US10/296,195
• Publication Number:
  US 20030164502A1
• Time in Patent Office: Days
• US Class Current: 257/78
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

Optoelectronic component and method for producing the same To improve the permeability of a contact layer (6) of a light-emitting diode (1), it is proposed to provide the contact layer (6) with openings (8) through which photons generated in a pn junction (5) can escape. Small spheres, for example of polystyrene, are used to produce the openings (8). FIG. 1

Claims

1. An optoelectronic component comprising a radioparent contact layer (6) on a semiconductor surface based on In_xAl_yGa₁₋

x−

yN, where 0≦

x≦

1, 0≦

y≦

1 and x+y≦

1, characterized in that

said contact layer (6) comprises a plurality of mutually juxtaposed recesses (8) and in that the thickness of said contact layer (6) is greater than 5 nm and less than 100 nm.

2. The component as recited in claim 1, characterized in that

the sum of the cross-sectional areas of said recesses (8) is greater than the area of the remaining contact layer (6).

3. The component as recited in claim 1 or 2, characterized in that

the cross-sectional areas of said recesses (8) are circular.

4. The component as recited in claim 1 or 2, characterized in that

said recesses (8) have hexagonal cross-sectional areas.

5. The component as recited in claim 1 or 2, characterized in that

said recesses (8) are formed by elongated slits (17).

6. The component as recited in claim 5, characterized in that

the webs (16) between said recesses (8) are interlinked.

7. The component as recited in any of claims 1 to 6, characterized in that

said recesses (8) are distributed in an evenly spaced manner over said contact layer (6).

8. The component as recited in any of claims 1 to 6, characterized in that

said recesses (8) are distributed in an unevenly spaced manner over said contact layer (6).

9. The component as recited in any of claims 1 to 6, characterized in that

the cross-sectional areas of said recesses (8) increase toward the edge of said contact layer (6).

10. The component as recited in any of claims 1 to 9, characterized in that

said recesses are openings (8) that pass all the way through said contact layer (6).

11. A method for producing a radioparent contact layer (6) on a semiconductor surface of a semiconductor, characterized in that

said contact layer (6) is patterned by means of a layer of particles (11) that do not cover the semiconductor surface completely, that comprise recesses (8), and that serve as a mask.

12. The method as recited in claim 11, characterized in that

said particles (11) are realized as spherical.

13. The method as recited in claim 11 or 12, characterized in that

said particles (11) are made of polystyrene.

14. The method as recited in any of claims 11 to 13, characterized in that

said particles (11) are used with outer dimensions of less than 1 μ

m.

15. The method as recited in any of claims 11 to 14, characterized in that

said particles (11) are floated onto the semiconductor surface by means of a liquid.

16. The method as recited in any of claims 11 to 15, characterized in that

said semiconductor surface is first covered with particles (11) and the material (6) used for metallization is deposited on said semiconductor surface.

17. The method as recited in claim 16, characterized in that

before the deposition of said material (6) used for metallization, said particles (11) are back-etched.

18. The method as recited in any of claims 11 to 15, characterized in that

said material (6) used for metallization is first precipitated on said semiconductor surface and said semiconductor surface is then covered with said particles (11), and said material (6) used for metallization is then removed from between said particles (11).

19. The method as recited in claim 18, characterized in that

the material (6) used for metallization that is not covered by said particles (11) is removed by backsputtering or plasma etching.

20. The method as recited in any of claims 11 to 19, characterized in that

after the patterning of said contact layer (6), said particles (11) are removed by means of solvents in an ultrasonic bath.

21. The method as recited in any of claims 11 to 19, characterized in that

after the patterning of said contact layer (6), said particles (11) are removed by being dissolved in an etching solution.