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Hybrid circuit having nanotube electromechanical memory

  • US 20030165074A1
  • Filed: 03/05/2003
  • Published: 09/04/2003
  • Est. Priority Date: 07/25/2001
  • Status: Active Grant
First Claim
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1. A hybrid memory circuit, comprising:

  • an electromechanical memory cell having at least two electrodes and in which at least one of the two electrodes is formed of a plurality of nanotubes and in which the first electrode crosses the second electrode;

    an access circuit constructed of semiconductor circuit elements for providing addressing the memory cell circuit so as to activate the electromechanical memory cell for read and write operations, wherein write operations cause the one electrode formed of a plurality of nanotubes to deflect to a physical state corresponding to an information state, and wherein read operations do not change the deflected state.

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