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Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough

  • US 20030165178A1
  • Filed: 03/01/2002
  • Published: 09/04/2003
  • Est. Priority Date: 03/01/2002
  • Status: Active Grant
First Claim
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1. A method of identifying a defect in a semiconductor wafer, the method comprising:

  • applying heat to a conductive structure formed on said semiconductor wafer;

    measuring a signal indicative of temperature of a portion of the conductive structure heated by conduction of the applied heat therethrough, thereby to obtain a measurement;

    repeating the act of measuring at each of a number of different locations on the conductive structure, thereby to obtain a plurality of measurements; and

    determining presence of the defect in the conductive structure, depending on the plurality of measurements.

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