Light-emitting-diode chip comprising a sequence of gan-based epitaxial layer which emit radiation, and a method for producing the same
First Claim
1. A light-emitting diode chip (1) comprising a GaN-based, radiation-emitting epitaxial layer sequence (3) comprising an active region (19), an n-doped layer (4) and a p-doped layer (5), and a reflective contact metallization (6) assigned to said p-doped layer (5) and comprising a radioparent contact layer (15) and a reflective layer (16), and in which said radioparent contact layer (15) is arranged between said p-doped layer (5) and said reflective layer (16).
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Abstract
A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
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Citations
18 Claims
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1. A light-emitting diode chip (1) comprising
a GaN-based, radiation-emitting epitaxial layer sequence (3) comprising an active region (19), an n-doped layer (4) and a p-doped layer (5), and a reflective contact metallization (6) assigned to said p-doped layer (5) and comprising a radioparent contact layer (15) and a reflective layer (16), and in which said radioparent contact layer (15) is arranged between said p-doped layer (5) and said reflective layer (16).
Specification