Device having inductors and capacitors and a fabrication method thereof

• US 20030168716A1
• Filed: 02/27/2003
• Published: 09/11/2003
• Est. Priority Date: 03/05/2002
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Inventors: Lee, Moon-Chul, Jeong, Sung-Hye, Hong, Young-Tack, Hong, Jeong-Yoo, Song, In-Sang
• Granted Patent: US 7,169,684 B2
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 27/016 Thin-film circuits
• CPC Class Codes: H01L 27/0744 without components of the field effect type
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H03H 2001/0078 comprising spiral inductor on a substrate
• CPC Class Codes: H03H 2001/0085 Multilayer, e.g. LTCC, HTCC, green sheets inside PCB filters H05K
• CPC Class Codes: H03H 7/0115 comprising only inductors and capacitors H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence
• CPC Class Codes: H05K 1/16 incorporating printed electric components, e.g. printed resistor, capacitor, inductor
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 1/165 incorporating printed inductors
• CPC Class Codes: H05K 2201/1006 Non-printed filter
• CPC Class Codes: H05K 2201/10545 Related components mounted on both sides of the PCB
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

An LC device having a substrate, a support layer having upper and lower sides formed on the substrate, inductors formed on either the upper or lower side of the support layer, and capacitors formed in the opposite side of the support layer. The support layer may be formed of a low-k dielectric material, and a connection portion may be provided to connect the inductors and capacitors in the support layer. The inductors and capacitors are disposed in a stacked structure on the upper and lower sides of the low-k dielectric support layer on the substrate, so that space efficiency may be maximized on the substrate. The low-k dielectric support layer provides support between the inductors and capacitors so that substrate loss is minimized and a Q factor of the inductors is enhanced.

Claims

1. An LC device, comprising:

a substrate;

a support layer having an upper side and a lower side formed on the substrate, the upper side and lower side of the support layer being opposite each other;

inductors formed on either the upper side or the lower side of the support layer; and

capacitors formed on the side of the support layer that is opposite the side on which the inductors are formed.

2. The LC device as claimed in claim 1, wherein the support layer is formed of a material having a low dielectric constant.

3. The LC device as claimed in claim 2, wherein the material of the support layer having a low dielectric constant is bicyclobutene (BCD) or a polymer-series substance.

4. The LC device as claimed in claim 1, wherein the support layer is supported by the substrate, and the substrate is patterned such that the inductors or capacitors formed on the lower side of the support layer are exposed to the air.

5. The LC device as claimed in claim 1, further comprising a connection portion formed through the support layer for electrically connecting the inductors and the capacitors formed on the upper and lower sides of the support layer.

6. The LC device as claimed in claim 1, wherein the inductors and the capacitors formed on the upper and lower sides of the support layer are formed in a stacked structure relative to each other.

7. A method for fabricating an LC device comprising:

forming either inductors or capacitors in a substrate;

forming a support layer having an upper side and a lower side on the substrate in which either the inductors or the capacitors are formed; and

forming in the upper side of the support layer inductors if capacitors were previously formed in the substrate or capacitors if inductors were previously formed in the substrate.

8. The method as claimed in claim 7, wherein when the inductors are formed prior to forming the capacitors, the method further comprises:

forming the inductors by;

etching recesses in the substrate for the inductors to be formed therein prior to forming the inductors;

depositing a mask oxide layer on upper and lower sides of the substrate having the recesses formed therein;

depositing a seed metal layer on the substrate at a region where the inductors will be formed;

forming and patterning a photoresist layer on the substrate for filling the recesses; and

filling the recesses with a metal to form the inductors and removing the photoresist layer;

forming the support layer by;

depositing a material having a low dielectric constant on the substrate having the inductors formed therein to form the support layer so that the inductors are disposed at a lower side of the support layer; and

forming a connection opening in the support layer and filling the connection opening with a metal to form a connection portion;

forming the capacitors by;

forming a lower electrode layer on an upper side of the support layer corresponding to the location of the inductors; and

forming a dielectric and an upper electrode on the lower electrode to form a capacitor connected to the inductors by the connection portion; and

disposing the inductors in air by;

forming protection layers on the upper and lower sides of the substrate;

patterning the protection layer on the lower side of the substrate so that the protection layer is removed at a region corresponding to the region of the support layer in which the inductors are formed;

etching the substrate and the mask oxide layer at the region where the protection layer has been removed to remove a region of the substrate and the mask oxide layer surrounding the inductors; and

removing any remaining portion of the protection layers.

9. The method as claimed in claim 7, wherein when the capacitors are formed prior to forming the inductors, the method further comprises:

forming the capacitors by;

etching recesses in the substrate for the capacitors to be formed therein prior to forming the capacitors;

depositing a mask oxide layer on upper and lower sides of the substrate having the recesses formed therein;

forming a metal lower electrode in the recesses formed in the substrate; and

forming a capacitor dielectric having a high dielectric constant on the lower electrode in the recesses, and forming a metal upper electrode on the capacitor dielectric to form the capacitors;

forming the support layer by;

depositing a material having a low dielectric constant on the substrate having the capacitors formed thereon; and

forming a connection opening in the support layer to electrically connect the capacitors and the inductors; and

forming the inductors by;

depositing a seed metal layer on the substrate at a region where the inductors will be formed;

forming a mask on the substrate having openings at the connection opening and at regions in which the inductors will be formed;

filling the openings of the mask and the connection opening with a metal to form a connection portion in the connection opening and to form the inductors, and removing the mask;

disposing the capacitors in air by;

forming protection layers on the upper and lower sides of the substrate;

patterning the protection layer on the lower side of the substrate so that the protection layer is removed at a region corresponding to the region of the substrate in which the capacitors are formed;

etching the substrate and the mask oxide layer at the region where the protection layer has been removed to remove a region of the substrate and the mask oxide layer surrounding the capacitors; and

removing any remaining portion of the protection layers.

10. The method as claimed in claim 7, further comprising etching recesses in the substrate in which to form the inductors or capacitors before forming the inductors or capacitors.

11. The method as claimed in claim 7, wherein the support layer is formed of a material having a low dielectric constant.

12. The method as claimed in claim 11 wherein the material having a low dielectric constant is bicyclobutene (BCD) or a polymer-series substance.

13. The method as claimed in claim 7, further comprising forming a connection portion through the support layer.

14. The method as claimed in claim 7, wherein the inductors and the capacitors are formed in a stacked structure.

15. The method as claimed in claim 7, further comprising etching regions of the substrate in which the inductors and the capacitors are formed, the regions being disposed under the support layer, such that the inductors and capacitors are exposed to air under the support layer.