Power semiconductor device

• US 20030168726A1
• Filed: 11/21/2002
• Published: 09/11/2003
• Est. Priority Date: 04/02/2001
• Status: Active Grant

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Ishii, Kazufumi, Iura, Shinichi
• Granted Patent: US 6,717,258 B2
• Time in Patent Office: Days
• US Class Current: 257/691
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/162 the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01041 Niobium [Nb]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H05K 7/1432 specially adapted for power drive units or power converters
• CPC Class Codes: H05K 7/14329 specially adapted for the configuration of power bus bars

Abstract

The present invention relates to power semiconductor devices, and particularly to a power semiconductor device having a plurality of semiconductor device modules; an object of the invention is to provide semiconductor device modules which are capable of solving problems caused by the presence of the control board, and facilitating electric connection between power semiconductor elements and main circuit terminals and lightening restrictions on the number and layout of the power semiconductor elements.

To achieve the object above, a control emitter relay terminal (7), a gate relay terminal (8), and a relay terminal (9) are connected to a control board (10) disposed above an edge portion of the semiconductor device module (100). The control board (10) has control circuitry and elements for controlling operations of an IGBT device (1) and a diode device (2), and also has a control emitter interconnection pattern to which the control emitter relay terminal (7) is connected and a gate interconnection pattern to which the gate relay terminal (8) is connected, where these interconnection patterns are connected to the control circuitry.

Claims

1. A power semiconductor device, comprising:

a plurality of semiconductor device modules each comprising,

a resin case (11),

a power semiconductor element (1) accommodated in said resin case,

a main circuit terminal (M1, M2) protruding outward from said resin case (11) and in which a main current of said power semiconductor element (1) flows, and

a control terminal (7, 8) protruding outward from said resin case (11) and to which a control signal for controlling said power semiconductor element (1) is inputted;

a bus bar electrically connecting in common said main circuit terminals of said plurality of semiconductor device modules, said main circuit terminals being arranged in line; and

a control board (10-50) disposed to at least cover a disposed area of said protruding control terminals (7, 8) of said plurality of semiconductor device modules and electrically connected to said control terminals (7, 8).

2. The power semiconductor device according to claim 1, wherein said control terminal protrudes outward from an edge portion of said resin case (11), and

said control board (10-30) is disposed to cover only an area over said edge portions of said plurality of semiconductor device modules from which said control terminals (7, 8) protrude.

3. The power semiconductor device according to claim 2, wherein said plurality of semiconductor device modules are arranged in rows so that their respective said edge portions from which said control terminals (7, 8) protrude lie next to each other, and said control board (10-30) is disposed to extend over said edge portions across from one said row to another of said plurality of semiconductor device modules.

4. The power semiconductor device according to claim 1, wherein said control board (50) is disposed above said bus bar and is sized to cover almost all of the region where said plurality of semiconductor device modules are disposed.

5. The power semiconductor device according to claim 1, wherein said control board (40) is disposed to cover said plurality of semiconductor device modules except in an area where said main circuit terminals (M1, M2) are disposed.

6. The power semiconductor device according to claim 5, wherein said control board (40) has an interconnection pattern electrically connecting said control terminals (7, 8) in common, and

said interconnection pattern has a non-loop shape in a plan view.

7. A power semiconductor device, comprising:

a plurality of semiconductor device modules each comprising,

a resin case (11),

a power semiconductor element (1) accommodated in said resin case, and

a control terminal (7, 8) protruding outward from an edge portion of said resin case (11) and to which a control signal for controlling said power semiconductor element (1) is inputted; and

a control board (10-30) electrically connected to said control terminals (7, 8);

said plurality of semiconductor device modules being arranged in rows so that their respective said edge portions from which said control terminals (7, 8) protrude lie next to each other,

said control board (10-30) being disposed to extend over said edge portions across from one said row to another of said plurality of semiconductor device modules.