Multiple-pass interferometry

• US 20030169429A1
• Filed: 01/28/2003
• Published: 09/11/2003
• Est. Priority Date: 01/28/2002
• Status: Active Grant

• Current Assignee: Zygo Corporation (Ametek Incorporated)
• Original Assignee: Zygo Corporation (Ametek Incorporated)
• Inventors: Hill, Henry A.
• Granted Patent: US 6,791,693 B2
• Time in Patent Office: Days
• US Class Current: 356/498
• CPC Class Codes: G01B 2290/45 Multiple detectors for detecting interferometer signals
• CPC Class Codes: G01B 2290/70 Using polarization in the interferometer
• CPC Class Codes: G01B 9/02003 using beat frequencies
• CPC Class Codes: G01B 9/02018 Multipass interferometers, e.g. double-pass
• CPC Class Codes: G01B 9/02019 contacting different points on same face of object
• CPC Class Codes: G01B 9/02061 Reduction or prevention of effects of tilts or misalignment

Abstract

Interferometry system including a multiple-pass interferometer having reflectors to reflect at least two beams along multiple passes through the interferometer. The multiple passes include a first set of passes and a second set of passes. The reflectors have first alignments that are normal to the directions of the paths of the beams that are reflected by the reflectors. The two beams provide information about changes in a first location on one of the reflectors after the first set of passes, and provide information about changes in the first location and changes in a second location on the reflector after the second set of passes. The paths of the beams are sheared during the first set of passes and during the second set of passes if at least one of the reflectors has an alignment other than the first alignment. The interferometry system includes optics to redirect the beams after the first set of passes and before the second set of passes so that shear imparted during the second set of passes cancels shear imparted during the first set of passes.

Claims

1. An apparatus comprising:

a multiple-pass interferometer including

reflectors to reflect at least two beams along multiple passes through the interferometer, the multiple passes including a first set of passes and a second set of passes, the reflectors having first alignments that are normal to the directions of the paths of the beams that are reflected by the reflectors,

the two beams providing information about changes in a first location on one of the reflectors after the first set of passes,

the two beams providing information about changes in the first location and changes in a second location on the reflector after the second set of passes,

the paths of the beams being sheared during the first set of passes and during the second set of passes if at least one of the reflectors has an alignment other than the first alignment, and

optics to redirect the beams after the first set of passes and before the second set of passes so that shear imparted during the second set of passes cancels shear imparted during the first set of passes.

2. The apparatus of claim 1 in which the optics are configured to redirect the beams while maintaining the magnitude and direction of shear between the two beams.

3. The apparatus of claim 1 in which the propagation path of one of the two beams after being redirected by the optics is parallel to the propagation path of the other one of the two beams after completing the first set of passes.

4. The apparatus of claim 1 in which the reflectors comprise plane reflection surfaces.

5. The apparatus of claim 1 in which the beams comprise a reference beam that is directed toward one of the reflectors maintained at a position that is stationary relative to the interferometer.

6. The apparatus of claim 5 in which the beams comprise a measurement beam that is directed towards one of the reflectors that is movable relative to the interferometer.

7. The apparatus of claim 6 in which the paths of the reference and measurement beams define an optical path length difference, the changes in the optical path length difference indicative of changes in the position of the one of the reflectors that is movable relative to the interferometer.

8. The apparatus of claim 1 in which the reflectors comprise a first reflector and a second reflector, the beams comprising a first beam directed toward the first reflector and a second beam directed toward the second reflector, each of the first and second reflectors being movable relative to the interferometer.

9. The apparatus of claim 8 in which the paths of the first and second beams define an optical path length difference, the changes in the optical path length difference indicative of changes in relative positions of the first and second reflectors.

10. The apparatus of claim 1 in which the first set of passes consists of two passes, and during each pass each of the beams is reflected by one of the reflectors at least once.

11. The apparatus of claim 10 in which the second set of passes consists of two passes, and during each pass each of the beams is reflected by one of the reflectors at least once.

12. The apparatus of claim 1 in which the multiple-pass interferometer comprises a beam splitter that separates an input beam into the beams and directs the beams toward the reflectors.

13. The apparatus of claim 12 in which the beam splitter comprises a polarizing beam splitter.

14. The apparatus of claim 1 in which the optics comprise an odd number of reflection surfaces.

15. The apparatus of claim 14 in which normals of the reflection surfaces lie in a common plane.

16. The apparatus of claim 14 in which the reflection surfaces comprise plane reflection surfaces.

17. The apparatus of claim 14 in which for each beam redirected by the optics, the beam is reflected by the reflection surfaces such that a sum of angles between incident and reflection beams of each reflection surface is zero or an integer multiple of 360 degrees, the angle measured in a direction from the incident beam to the reflection beam, the angle having a positive value when measured in a counter clockwise direction and a negative value when measured in a clockwise direction.

18. The apparatus claim 1 in which the interferometer combines the beams after the beams travel through the first and second set of passes to form overlapping beams that exit the interferometer.

19. The apparatus of claim 18, further comprising a detector that responds to optical interference between the overlapping beams and produces an interference signal indicative of an optical path length difference between the paths of the beams.

20. The apparatus of claim 19 in which the detector comprises a photodetector, an amplifier, and an analog-to-digital converter.

21. The apparatus of claim 20, further comprising an analyzer coupled to the detector to estimate a change in an optical path length difference of the beams based on the interference signal.

22. The apparatus of claim 1 in which the optics consist of one reflection surface.

23. The apparatus of claim 1 in which the optics comprise an even number of reflection surfaces.

24. The apparatus of claim 23 in which the optics comprise a cube corner retroreflector.

25. The apparatus of claim 1, further comprising a source to provide the beams.

26. The apparatus of claim 1 in which the interferometer comprises a differential plane mirror interferometer.

27. The apparatus of claim 1 in which the two beams have different frequencies.

28. A lithography system for use in fabricating integrated circuits on a wafer, the system comprising:

a stage to support the wafer;

an illumination system to image spatially patterned radiation onto the wafer;

a positioning system to adjust the position of the stage relative to the imaged radiation; and

the apparatus of claim 1 to monitor the position of the stage relative to the imaged radiation.

29. A lithography system for use in fabricating integrated circuits on a wafer, the system comprising:

a stage to support the wafer; and

an illumination system including a radiation source, a mask, a positioning system, a lens assembly, and the apparatus of claim 1;

wherein during operation the source directs radiation through the mask to produce spatially patterned radiation, the positioning system adjusts the position of the mask relative to the radiation from the source, the lens assembly images the spatially patterned radiation onto the wafer, and the interferometer measures the position of the mask relative to the wafer.

30. A lithography system for use in fabricating a lithography mask, the system comprising:

a source to provide a write beam to pattern the lithography mask,

a stage to support the lithography mask,

a beam directing assembly to deliver the write beam to the lithography mask,

a positioning system to position the stage and beam directing assembly relative to one another, and

the apparatus of claim 1 to monitor the position of the stage relative to the beam directing assembly.

31. A method for fabricating integrated circuits, comprising:

using the lithography system of claim 28 to support a wafer, image spatially patterned radiation onto the wafer, adjust the position of the stage relative to the imaged radiation, and use the interferometer to monitor the position of the stage relative to the imaged radiation.

32. A method for fabricating integrated circuits, comprising:

using the lithography system of claim 29 to support a wafer, direct radiation from the source through the mask to produce spatially patterned radiation on the wafer, adjust the position of the mask relative to the radiation from the source, image the spatially patterned radiation onto the wafer, and use the interferometer to monitor the position of the mask relative to the wafer.

33. A method for fabricating lithography masks, comprising:

using the lithography system of claim 30 to support a lithography mask, deliver a write beam to the lithography mask, position the stage and beam directing assembly relative to one another, and use the interferometer to measure the position of the stage relative to the beam directing assembly.

34. A method comprising:

directing a first measurement beam along a first set of passes through an interferometer to a first region on a measurement object;

directing a first reference beam along a first set of passes through the interferometer to a reference object;

combining the first measurement and reference beams to produce a first output beam after the first measurement and reference beams complete the first set of passes;

determining a change in position in the first region on the measurement object;

using optics to direct a portion of the first measurement beam to form a second measurement beam;

using the optics to direct a portion of the first reference beam to form a second reference beam;

directing the second measurement beam along a second set of passes through the interferometer to a second region on the measurement object;

directing the second reference beam along a second set of passes through the interferometer to the reference object;

combining the second measurement and reference beams to produce a second output beam after the second measurement and reference beams complete the second set of passes; and

determining a change in position in the second region on the measurement object;

wherein a rotation of the measurement object relative to the directions of the paths of the first and second measurement beams that are incident on the measurement object imparts beam shear to the first measurement beam during the first set of passes and to the second measurement beam during the second set of passes, and

wherein the optics are configured to redirect the portion of the first measurement and reference output beams so that shear imparted upon the second measurement beam during the second set of passes cancels shear imparted upon the first measurement beam during the first set of passes.

35. A lithography method for use in fabricating integrated circuits on a wafer, the method comprising:

supporting the wafer on a moveable stage;

imaging spatially patterned radiation onto the wafer;

adjusting the position of the stage relative to the imaged radiation; and

monitoring the position of the stage relative to the imaged radiation using the method of claim 34.

36. A lithography method for use in the fabrication of integrated circuits comprising:

directing input radiation through a mask to produce spatially patterned radiation;

positioning the mask relative to the input radiation;

monitoring the position of the mask relative to the input radiation using the method of claim 34;

and

imaging the spatially patterned radiation onto a wafer.

37. A lithography method for fabricating integrated circuits on a wafer, the method comprising:

positioning a first component of a lithography system relative to a second component of a lithography system to expose the wafer to spatially patterned radiation; and

monitoring the position of the first component relative to the second component using the method of claim 34.

38. A method for fabricating integrated circuits, the method comprising the lithography method of claim 34.

39. A method for fabricating integrated circuits, the method comprising the lithography method of claim 35

40. A method for fabricating integrated circuits, the method comprising the lithography method of claim 36.

41. A method for fabricating integrated circuits, the method comprising the lithography method of claim 37.

42. A method for fabricating a lithography mask, the method comprising:

directing a write beam to a substrate to pattern the substrate;

positioning the substrate relative to the write beam; and

monitoring the position of the substrate relative to the write beam using the method of claim 34.

43. An apparatus comprising:

a multi-axis interferometer for measuring changes in position of a measurement object with respect to multiple degrees of freedom,

the interferometer is configured to receive an input beam, direct a first-measurement beam derived from the input beam to make first and second passes to the measurement object about a first point on the measurement object, and then combine the first measurement beam with a first reference beam derived from the input beam to produce a first output beam comprising information about changes in distance to the first point on the measurement object, and

the interferometer is further configured to direct a second-measurement beam derived from the input beam to make first and second passes to the measurement object about a second point on the measurement object, and then combine the second measurement beam with a second reference beam derived from the input beam to produce a second output beam comprising information about changes in distance to the second point on the measurement object,

wherein the interferometer comprises fold optics positioned to reflect a portion of the first output beam an odd number of times in a plane defined by the incidence of the measurement beams on the measurement objects to define a secondary input beam, and wherein the second measurement beam and the second reference beam are derived from the secondary input beam.

44. The apparatus of claim 43 wherein the interferometer comprises a polarizing beam splitter for directing the different beams along their respective paths, a first quarter wave plate positioned between the polarizing beam splitter and a reference object, and a second quarter wave plate positioned between the polarizing beam splitter and the measurement object.

45. The apparatus of claim 44 wherein the reference object comprises a plane mirror oriented substantially normal to the incident beam portions.

46. The apparatus of claim 44 wherein the fold optics comprise a nonpolarizing beam splitter positioned to separate a portion of the first output beam to define the secondary input beam and direct it back to the polarizing beam splitter to produce the second measurement beam and the second reference beam.

47. The apparatus of claim 46, wherein the fold optics comprise a plurality of reflective surfaces positioned to direct the secondary input beam from the non-polarizing beam splitter to the polarizing beam splitter, and wherein the non-polarizing beam splitter and the plurality of reflective surfaces reflect the second input beam an odd number of times prior to reaching the polarizing beam splitter.

48. The apparatus of claim 47, wherein the non-polarizing beam splitter reflects the first output beam to produce the secondary input beam, and wherein the plurality of reflective surfaces reflects the secondary input beam an even number of times.

49. The apparatus of claim 43, further comprising a first fiber optic pickup for coupling the first output beam to a detector and a second fiber optic pickup for coupling the second output beam to a detector.

50. A lithography system for use in fabricating integrated circuits on a wafer, the system comprising:

a stage for supporting the wafer;

an illumination system for imaging spatially patterned radiation onto the wafer;

a positioning system for adjusting the position of the stage relative to the imaged radiation; and

the apparatus claim 43 for monitoring the position of the wafer relative to the imaged radiation.

51. A lithography system for use in fabricating integrated circuits on a wafer, the system comprising:

a stage for supporting the wafer; and

an illumination system including a radiation source, a mask, a positioning system, a lens assembly, and the apparatus of claim 43;

wherein during operation the source directs radiation through the mask to produce spatially patterned radiation, the positioning system adjusts the position of the mask relative to the radiation from the source, the lens assembly images the spatially patterned radiation onto the wafer, and the interferometer monitors the position of the mask relative to the radiation from the source.

52. A beam writing system for use in fabricating a lithography mask, the system comprising:

a source providing a write beam to pattern a substrate;

a stage supporting the substrate;

a beam directing assembly for delivering the write beam to the substrate;

a positioning system for positioning the stage and beam directing assembly relative one another; and

the apparatus of claim 43 for monitoring the position of the stage relative to the beam directing assembly.