High frequency module

• US 20030169575A1
• Filed: 02/21/2003
• Published: 09/11/2003
• Est. Priority Date: 02/26/2002
• Status: Active Grant

• Current Assignee: Kyocera Corporation
• Original Assignee: Kyocera Corporation
• Inventors: Ikuta, Takanori, Kitazawa, Kenji
• Granted Patent: US 6,873,529 B2
• Time in Patent Office: Days
• US Class Current: 361/761
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/36 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/15192 : Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/15313 : being a land array, e.g. LGA
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/19106 : in a mirrored arrangement on two different side of a common die mounting substrate
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H03H 9/0538 : Constructional combinations of supports or holders with electromechanical or other electronic elements
• CPC Class Codes: H05K 1/0206 : by printed thermal vias
• CPC Class Codes: H05K 1/0237 : High frequency adaptations H05K1/0216 takes precedence
• CPC Class Codes: H05K 1/0298 : Multilayer circuits
• CPC Class Codes: H05K 1/0306 : Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/141 : One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters H05K1/142 and H05K1/147 take precedence
• CPC Class Codes: H05K 1/183 : Components mounted in and supported by recessed areas of the printed circuit board
• CPC Class Codes: H05K 1/185 : Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit semiconductor chips encapsulated by interconnect and support structures H01L23/5389, H01L24/00
• CPC Class Codes: H05K 2201/10083 : Electromechanical or electro-acoustic component, e.g. microphone
• CPC Class Codes: H05K 2201/10674 : Flip chip
• CPC Class Codes: H05K 3/3442 : having edge contacts, e.g. leadless chip capacitors, chip carriers
• CPC Class Codes: H05K 3/4053 : by thick-film techniques

Abstract

There is presented a high frequency module, in which a recess 2a for mounting power amplifier device is formed on a lower surface of a dielectric substrate 2, and a recess 2b for mounting surface acoustic wave filter is formed on an upper surface of the dielectric substrate 2, and a power amplifier device 4 and a surface acoustic wave filter 8 are mounted through conductive bumps 3a and 3b on the recesses 2a and 2b, respectively. In addition, a through-hole conductor 11 whose one end is exposed at the lower surface of the dielectric substrate 2 is provided between the recesses 2a and 2b. The exposed end of the through-hole conductor 11 is attached to a thermal dissipation conductor 15 on an upper surface of an external electric circuit board 7 through a brazing material 13.

Claims

1. A high frequency module comprising:

a dielectric substrate comprising a plurality of dielectric layers that are laminated together;

a power amplifier device mounted on a recess for mounting power amplifier device that is formed on a first surface of the dielectric substrate;

a filter component mounted on a recess for mounting filter component formed on the first surface or a second surface of the dielectric substrate;

a conductor layer that is formed on one dielectric layer in the dielectric substrate and electrically connected to the power amplifier device;

a thermal transfer seal component attached in contact with the power amplifier device; and

a through-hole conductor whose one end is exposed at the first surface of the dielectric substrate and which is provided between the recess for mounting power amplifier device and the recess for mounting filter component, wherein the thermal transfer seal component and the through-hole conductor are connected to a thermal dissipation conductor on an upper surface of an external electric circuit board through a brazing material.

2. The high frequency module according to claim 1, wherein the conductor layer is formed on a bottom surface of the recess for mounting power amplifier device.

3. The high frequency module according to claim 1, wherein the thermal conductivity of the dielectric layers is 20 W/m·

K or less.

4. The high frequency module according to claim 1, wherein a portion of the dielectric layers that is located around the recess for mounting power amplifier device comprises a dielectric layer having a thermal conductivity smaller than the thermal conductivity of a portion of the dielectric layers that is located around the recess for mounting filter component.

5. The high frequency module according to claim 1, wherein the recess for mounting power amplifier device and the recess for mounting filter component are spaced apart at a distance of 0.3 mm or more.

6. The high frequency module according to claim 1, wherein the thermal conductivity of the through-hole conductor is 100 W/m·

K or more.

7. The high frequency module according to claim 1, wherein there are a plurality of the through-hole conductors formed between the recess for mounting power amplifier device and the recess for mounting filter component.

8. The high frequency module according to claim 1, further comprising a second conductor layer which is formed on one dielectric layer in the dielectric substrate and electrically connected to the filter component, wherein the the second conductor layer and the conductor layer that is electrically connected to the power amplifier device are each formed on a different dielectric layer.

9. The high frequency module according to claim 8, wherein the second conductor layer is formed on a bottom surface of the recess for mounting filter component.

10. The high frequency module according to claim 1, wherein the recess for mounting filter component is sealed with a cover component.

11. The high frequency module according to claim 1, wherein the recess for mounting filter component is filled with an insulative resin.

12. The high frequency module according to claim 1, wherein the filter component is one of the group consisting of a surface acoustic wave filter SAW, a film bulk acoustic resonator FBAR, and a bulk acoustic wave filter BAW.

13. A high frequency module comprising:

a dielectric substrate comprising a plurality of dielectric layers that are laminated together;

a power amplifier device mounted on a power amplifier device mounting portion that is formed on a first surface of the dielectric substrate;

a filter component mounted on a filter component mounting portion formed on the first surface of the dielectric substrate;

a first through-hole conductor which is formed under the power amplifier device mounting portion and penetrates through the dielectric substrate to a second surface thereof; and

a second through-hole conductor whose one end is exposed at the second surface of the dielectric substrate and which is provided between the power amplifier device mounting portion and the filter component mounting portion;

wherein the first through-hole conductor and the second through-hole conductor are connected to a thermal dissipation conductor on an upper surface of an external electric circuit board through a brazing material.

14. The high frequency module according to claim 13, wherein a recess for mounting power amplifier device is formed on the first surface of the dielectric substrate and the power amplifier device is mounted within the recess, the power amplifier device being sealed with an insulative resin.

15. The high frequency module according to claim 13, wherein a recess for mounting filter component is formed on the first surface of the dielectric substrate and the filter component is mounted within the recess, the filter component being covered with a cover component.

16. The high frequency module according to claim 13, wherein a third through-hole conductor which penetrates through the dielectric substrate to the second surface thereof is provided under the filter component mounting portion that is provided on the first surface of the dielectric substrate.

17. The high frequency module according to claim 13, wherein the thermal conductivity of the dielectric layers is 20 W/M·

K or less.

18. The high frequency module according to claim 13, wherein a portion of the dielectric layers that is located around the power amplifier device mounting portion comprises a dielectric layer having a thermal conductivity smaller than the thermal conductivity of a portion of the dielectric layers located around the filter component mounting portion.

19. The high frequency module according to claim 13, wherein the power amplifier device mounting portion and the filter component mounting portion are spaced apart at a distance of 0.8 mm or more.

20. The high frequency module according to claim 13, wherein a conductor layer that is electrically connected to the filter component is formed on a dielectric layer under the filter component mounting portion, the dielectric layer being a different one from a dielectric layer under the power amplifier device mounting portion on which a conductor layer that is electrically connected to the power amplifier device is formed.

21. The high frequency module according to claim 13, wherein the filter component is one of the group consisting of a surface acoustic wave filter SAW, a film bulk acoustic resonator FBAR, and a bulk acoustic wave filter BAW.