Dielectric material and dielectric sintered body, and wiring board using the same

• US 20030170436A1
• Filed: 12/23/2002
• Published: 09/11/2003
• Est. Priority Date: 12/25/2001
• Status: Abandoned Application

• Current Assignee: NGK Spark PLUG Company Limited
• Original Assignee: NGK Spark PLUG Company Limited
• Inventors: Sakai, Tsutomu, Sato, Manabu, Sumi, Hiroshi, Mizutani, Hidetoshi, Suzumura, Masashi
• Application Number:
  US10/325,859
• Publication Number:
  US 20030170436A1
• Time in Patent Office: Days
• US Class Current: 428/210
• CPC Class Codes: C03C 14/004 the non-glass component being in the form of particles or flakes
• CPC Class Codes: C03C 2214/04 Particles; Flakes
• CPC Class Codes: C03C 2214/30 Methods of making the composites
• CPC Class Codes: C03C 8/14 Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
• CPC Class Codes: H01L 23/49894 Materials of the insulating layers or coatings
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H05K 1/0306 Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 3/4629 laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
• CPC Class Codes: H05K 3/4676 Single layer compositions
• CPC Class Codes: Y10T 428/24926 including ceramic, glass, porcelain or quartz layer

Abstract

A dielectric material comprising: a glass powder constituted of a glass comprising Si, B and an alkali metal element, the glass being amorphous in sintering at a temperature of 1,050° C. or lower; and a ceramic filler comprising at least one member of SiO₂, Al₂O₃ and 3Al₂O₃.2Si₂, and an alkali metal element, wherein when a total sum of Si converted into SiO₂, B converted into B₂O₃ and the alkali metal element converted into A₂O, wherein A represents an alkali metal element, all of which are contained in the glass, is 100 mole %, the content of the alkali metal element converted into A₂O, which is contained in the glass, is 0.5 mole % or less; and when a total sum of at least one member of SiO₂, Al₂O₃ and 3Al₂O₃.2SiO₂, and the alkali metal element converted into A₂O, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkali metal element converted into A₂O, which is contained in the ceramic filler, is 0.5 mole % or less.

Claims

1. A dielectric material comprising:

a glass powder constituted of a glass comprising Si, B and an alkali metal element, the glass being amorphous in sintering at a temperature of 1,050°

C. or lower; and

a ceramic filler comprising at least one member of SiO₂, Al₂O₃ and 3Al₂O₃.2SiO₂, and an alkali metal element, wherein when a total sum of Si converted into SiO₂, B converted into B₂O₃ and the alkali metal element converted into A₂O, wherein A represents an alkali metal element, all of which are contained in the glass, is 100 mole %, the content of the alkali metal element converted into A₂O, which is contained in the glass, is 0.5 mole % or less; and

when a total sum of at least one member of SiO₂, Al₂O₃ and 3Al₂O₃.2SiO₂, and the alkali metal element converted into A₂O, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkali metal element converted into A₂O, which is contained in the ceramic filler, is 0.5 mole % or less.

3. The dielectric material according to claim 1, wherein the glass further comprises at least one of Al and an alkaline earth metal element, and when a total sum of Si converted into SiO₂, B converted into B₂O₃, the alkali metal element converted into A₂O, wherein A represents an alkali metal element, Al converted into Al₂O₃ in a case where Al is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, is 100 mole %, a total sum of Si converted into SiO₂ and B converted into B₂O₃ is from 80 to 95 mole %.

5. The dielectric material according to claim 1, wherein the ceramic filler does not comprise an alkaline earth metal element.

7. The dielectric material according to claim 1, wherein the ceramic filler further comprises an alkaline earth metal element, and when a total sum of at least one member of SiO₂, Al₂O₃ and 3Al₂O₃.2SiO₂, the alkali metal element converted into A₂O, in a case where the alkali metal element is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkaline earth metal element converted into EO is 1 mole % or less.

9. The dielectric material according to claim 1, wherein when a total sum of the glass powder and the ceramic filler is 100% by volume, the glass powder accounts for from 55 to 70% by volume, and the ceramic filler accounts for from 30 to 45% by volume.

11. A dielectric sintered body obtained by sintering the dielectric material according to claim 1 at 800 to 1,050°

C., wherein when a total sum of Si converted into SiO₂, B converted into B₂O₃, the alkali metal element converted into A₂O, wherein A represents an alkali metal element, Al converted into Al₂O₃ in a case where Al is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, all of which are contained in the glass, and at least one member of SiO₂, Al₂O₃ and 3Al₂O₃.2SiO₂, the alkali metal element converted into A₂O, in a case where the alkali metal element is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkali metal element converted into A₂O is 0.5 mole % or less.

13. A wiring board comprising:

a dielectric layer comprising the dielectric sintered body according to claim 11;

and a conductor layer provided at least one of on a surface of and inside of the dielectric layer, the conductor layer comprising at least one member selected from Ag, Au and Cu.

22. The multilayered wiring board according to claim 15, further comprising the dielectric sintered body according to claim 11, wherein the conductor layer is provided at least one of:

on a surface of; and

inside of the dielectric layer, the conductor layer comprising at least one member selected from Ag, Au and Cu.

2. A dielectric material comprising:

a glass powder constituted of a glass comprising Si, B and an alkali metal element, the glass being amorphous in sintering at a temperature of 1,050°

C. or lower; and

a ceramic filler comprising at least one member of SiO₂, Al₂O₃ and 3Al₂O₃.2SiO₂ but not comprising an alkali metal element,

wherein when a total sum of Si converted into SiO₂, B converted into B₂O. and the alkali metal element converted into A₂O, wherein A represents an alkali metal element, all of which are contained in the glass, is 100 mole %, a content of the alkali metal element converted into A₂O, which is contained in the glass, is 0.5 mole % or less.

4. The dielectric material according to claim 2, wherein the glass further comprises at least one of Al and an alkaline earth metal element, and when a total sum of Si converted into SiO₂, B converted into B₂O₃, the alkali metal element converted into A₂O, wherein A represents an alkali metal element, Al converted into Al₂O₃ in a case where Al is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, is 100 mole %, a total sum of Si converted into SiO₂ and B converted into B₂O₃ is from 80 to 95 mole %.

6. The dielectric material according to claim 2, wherein the ceramic filler does not comprise an alkaline earth metal element.

8. The dielectric material according to claim 2, wherein the ceramic filler further comprises an alkaline earth metal element, and when a total sum of at least one member of SiO₂, Al₂O₃ and 3Al₂O₃.2SiO₂, the alkali metal element converted into A₂O, in a case where the alkali metal element is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkaline earth metal element converted into EO is 1 mole % or less.

10. The dielectric material according to claim 2, wherein when a total sum of the glass powder and the ceramic filler is 100% by volume, the glass powder accounts for from 55 to 70% by volume, and the ceramic filler accounts for from 30 to 45% by volume.

12. A dielectric sintered body obtained by sintering the dielectric material according to claim 2 at 800 to 1,050°

C., wherein when a total sum of Si converted into SiO₂, B converted into B₂O₃, the alkali metal element converted into A₂O, wherein A represents an alkali metal element, Al converted into Al₂O₃ in a case where Al is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, all of which are contained in the glass, and at least one member of SiO₂, Al₂O₃ and 3Al₂O₃.2SiO₂, the alkali metal element converted into A₂O, in a case where the alkali metal element is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkali metal element converted into A₂O is 0.5 mole % or less.

14. A wiring board comprising:

a dielectric layer comprising the dielectric sintered body according to claim 12;

and a conductor layer provided at least one of on a surface of and inside of the dielectric layer, the conductor layer comprising at least one member selected from Ag, Au and Cu.

23. The multilayered wiring board according to claim 15, further comprising the dielectric sintered body according to claim 12, wherein the conductor layer is provided at least one of:

on a surface of; and

inside of the dielectric layer, the conductor layer comprising at least one member selected from Ag, Au and Cu.

15. A multilayered wiring board comprising:

a dielectric layer comprising a glass having a crystallization temperature exceeding 1,000°

C. and a ceramic filler; and

a conductor layer comprising a metal conductor,

wherein a part of the conductor layer is an entire electrode conductor layer having a forming area of 1 cm² or more.

16. The multilayered wiring board according to claim 15, wherein the entire electrode conductor layer is at least one of an ground electrode and a capacitor electrode.

17. The multilayered wiring board according to claim 15, wherein the dielectric layer has a specific dielectric constant of 7 or less and a dielectric loss of 0.002 or less in a high-frequency band of 10 GHz or more.

18. The multilayered wiring board according to claim 15, wherein the glass comprises SiO₂, B₂O₃, Al₂O₃ and an alkaline earth metal oxide, in which a content of a sum of SiO₂ and B₂O₃ is from 80 to 95 mole %, and a crystal phase caused by a crystallization of the glass does not exist in the dielectric layer.

19. The multilayered wiring board according to claim 15, wherein the glass consists essentially of SiO₂, B₂O₃, Al₂O₃ and an alkaline earth metal oxide, in which a content of a sum of SiO₂ and B₂O₃ is from 80 to 95 mole %, and a crystal phase caused by a crystallization of the glass does not exist in the dielectric layer.

20. A process for producing a multilayered wiring board, which comprises:

sintering a multilayered wiring molding comprising a green material comprising a glass having a crystallization temperature exceeding 1,000°

C. and a ceramic filler and a conductor layer comprising a metal conductor, a part of the conductor layer being an entire electrode conductor layer having a forming area of 1 cm² or more, at a temperature lower than the crystallization temperature of the glass to form a multilayered wiring board.

21. The process according to claim 20, wherein the glass comprises SiO₂ and B₂O₃, Al₂O₃ and an alkaline earth metal oxide, in which a content of a sum of SiO₂ and B₂O₃ is from 80 to 95 mole %.