Heat treatment apparatus and a method for fabricating substrates

• US 20030170583A1
• Filed: 02/27/2003
• Published: 09/11/2003
• Est. Priority Date: 03/01/2002
• Status: Abandoned Application

• Current Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Nakashima, Sadao, Ishiguro, Kenichi, Shimada, Tomoharu
• Application Number:
  US10/373,754
• Publication Number:
  US 20030170583A1
• Time in Patent Office: Days
• US Class Current: 432/241
• CPC Class Codes: C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure C30B31/00 takes precedence
• CPC Class Codes: H01L 21/67306 characterized by a material, a roughness, a coating or the like
• CPC Class Codes: H01L 21/67309 characterized by the substrate support

Abstract

A heat treatment apparatus for performing a heat treatment on one or more substrates includes a substrate support device holding the substrates, the substrate support device having a main body and a contact portion being in contact with a substrate. A surface of the main body is made of a material different from that of the contact portion, and at least a surface of the contact portion is made of either glassy carbon or graphite.

Claims

1. A heat treatment apparatus for performing a heat treatment on one or more substrates, comprising:

a substrate support device holding said one or more substrates, the substrate support device including a main body and a contact portion being in contact with a substrate,

wherein a surface of the main body is made of a material different from that of the contact portion, and at least a surface of the contact portion is made of either glassy carbon or graphite.

2. The heat treatment apparatus of claim 1, wherein the contact portion is formed of a first material and a second material, the first material is being coated with the second material and the first material having a hardness smaller than that of the second material.

3. The heat treatment apparatus of claim 2, wherein the second material is glassy carbon.

4. The heat treatment apparatus of claim 3, wherein the first material is graphite.

5. The heat treatment apparatus of claim 1, wherein the main body is made of carbon silicide, silicon or quartz.

6. The heat treatment apparatus of claim 1, wherein the contact portion is removably disposed on the main body.

7. The heat treatment apparatus of claim 1, wherein the substrate support device holds the substrates in a substantially horizontal manner such that they are vertically stacked with a predetermined interval therebetween.

8. The heat treatment apparatus of claim 1, wherein the heat treatment is performed by heating said one or more substrates at about 1000°

C. or above.

9. The heat treatment apparatus of claim 1, wherein the heat treatment is performed by heating said one or more substrates at about 1350°

C. or above.

10. A semiconductor device fabricating method, comprising the steps of:

loading one or more substrates into a reaction furnace;

holding said one or more substrates by using a substrate support device wherein the substrate support device includes a main body and a contact portion being in contact with a substrate, and a surface of the main body is made of a material different from that of the contact portion, at least a surface region of the contact portion being made of glassy carbon or graphite;

performing a heat treatment on said one or more substrates held in the substrate support device in the reaction furnace; and

unloading said one or more substrates from the reaction furnace.

11. A substrate fabricating method, comprising the steps of:

loading one or more substrates into a reaction furnace;

holding said one or more substrates by using a substrate support device wherein the substrate support device includes a main body and a contact portion being in contact with a substrate, and a surface of the main body is made of a material different from that of the contact portion, at least a surface region of the contact portion being made of glassy carbon or graphite;

performing a heat treatment on said one or more substrates held in the substrate support device in the reaction furnace; and

unloading said one or more substrates from the reaction furnace.