Plasma processing apparatus for adjusting plasma processing through detecting plasma processing state within chamber

• US 20030173028A1
• Filed: 03/12/2002
• Published: 09/18/2003
• Est. Priority Date: 03/12/2002
• Status: Active Grant

• Current Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Tanaka, Junichi, Ikuhara, Shoji, Yamamoto, Hideyuki
• Granted Patent: US 6,841,032 B2
• Time in Patent Office: Days
• US Class Current: 156/345.24
• CPC Class Codes: G01N 21/71 thermally excited
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A plasma processing apparatus for processing an object arranged within a chamber by utilizing the plasma caused within the chamber, the apparatus including: a sensor having plural lines of a plurality of elements for detecting a plurality of strip-like beams; an application unit for applying the plurality of strip-like beams generated from the light within the chamber in such a way that each of the illumination faces of the strip-like beams makes an angle with respect to each of the lines of the elements; and a control unit for adjusting the operation of the apparatus using outputs from the sensor.

Claims

1. A plasma processing apparatus for processing an object arranged within a chamber by utilizing the plasma caused within said chamber, said apparatus comprising:

a sensor having plural lines of a plurality of elements for detecting a plurality of strip-like beams;

application means for applying the plurality of strip-like beams generated from the light within said chamber in such a way that each of the illumination faces of the strip-like beams makes an angle with respect to each of the lines of said elements; and

control means for adjusting the operation of said apparatus using outputs from said sensor.

2. A plasma processing apparatus comprising:

a sample stage, arranged within a chamber, for placing thereon an object to be processed;

plasma generation means for generating the plasma within said chamber;

a spectroscope for introducing thereinto the light within said chamber through a slit to generate a plurality of beams having different wavelengths;

a sensor having a plurality of elements, disposed in a plurality of predetermined lines, for detecting the beams;

a detector for detecting the intensities of the plurality of beams using outputs from said sensor; and

a controller for adjusting the processing for the object to be processed using outputs from said detector,

wherein the plurality of beams are applied onto said elements in such a way that each of the illumination faces of the beams on the surface of said sensor makes an angle with respect to each of the lines of said elements.