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High breakdown voltage low on-resistance lateral DMOS transistor

  • US 20030173624A1
  • Filed: 02/12/2003
  • Published: 09/18/2003
  • Est. Priority Date: 02/23/2002
  • Status: Active Grant
First Claim
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1. A metal oxide semiconductor (MOS) transistor comprising:

  • a substrate of a first conductivity type;

    a drift region of a second conductivity type over the substrate;

    a body region of the first conductivity type in the drift region;

    a source region of the second conductivity in the body region;

    a gate extending over a surface portion of the body region, the surface portion of the body region extending between the source region and the drift region to form a channel region of the transistor;

    a drain region of the second conductivity type in the drift region, the drain region being laterally spaced from the body region;

    a first buried layer of the second conductivity type between the substrate and drift region, the first buried layer laterally extending from under the body region to under the drain region; and

    a second buried layer of the first conductivity type between the first buried layer and the drift region, the second buried layer laterally extending from under the body region to under the drain region.

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