Semiconductor device, method of manufacturing the same, and phase shift mask
First Claim
1. A semiconductor device comprising:
- an integrated circuit part in which an integrated circuit is formed;
a main wall part including metal films surrounding said integrated circuit part; and
a sub-wall part including metal films selectively formed between said integrated circuit part and said main wall part, wherein said integrated circuit part, said main wall part and said sub-wall part share;
a semiconductor substrate; and
one or two or more interlayer insulation film(s) formed above said semiconductor substrate, in which openings are selectively formed, and wherein a part of wires constituting said integrated circuit and a part of said metal films provided to each of said main wall part and said sub-wall part are substantially formed as a same layer.
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Accused Products
Abstract
A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in “L” shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance.
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Citations
44 Claims
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1. A semiconductor device comprising:
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an integrated circuit part in which an integrated circuit is formed;
a main wall part including metal films surrounding said integrated circuit part; and
a sub-wall part including metal films selectively formed between said integrated circuit part and said main wall part, wherein said integrated circuit part, said main wall part and said sub-wall part share;
a semiconductor substrate; and
one or two or more interlayer insulation film(s) formed above said semiconductor substrate, in which openings are selectively formed, and wherein a part of wires constituting said integrated circuit and a part of said metal films provided to each of said main wall part and said sub-wall part are substantially formed as a same layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, comprising the step of:
selectively forming a sub-wall part including metal films between said integrated circuit part and said main wall part, in parallel to formation of said integrated circuit part and said main wall part. - View Dependent Claims (27, 28, 29, 30, 31)
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32. A phase shift mask, comprising:
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a phase shifter film formed on a transparent substrate; and
a light shield film formed in a scribe line region on said transparent substrate, wherein a region surrounded by said scribe line region is constituted of an integrated circuit region with which an integrated circuit part is to be formed and a peripheral edge region with which a peripheral edge part in a periphery of said integrated circuit part is to be formed, and wherein said light shield film is further formed at least in a part of said peripheral edge region and said integrated circuit region. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39)
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40. A phase shift mask, comprising:
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a phase shifter film having an integrated circuit part pattern for forming an integrated circuit part, and a main wall part pattern for forming a main wall part which is formed to surround said integrated circuit part, wherein an angle of a corner portion of said main wall part pattern is 100 degrees or larger.
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41. A phase shift mask, comprising:
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a phase shifter film having an integrated circuit part pattern for forming an integrated circuit part, a main wall part pattern for forming a main wall part which is formed to surround said integrated circuit part, and a sub-wall part pattern for forming a sub-wall part which is formed between said integrated circuit part and said main wall part, wherein an angle of a corner portion of said sub-wall part pattern is 100 degrees or larger. - View Dependent Claims (42)
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43. A phase shift mask, comprising:
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a phase shifter film having an integrated circuit part pattern for forming an integrated circuit part, a main wall part pattern for forming a main wall part which is formed to surround said integrated circuit part, and a sub-wall part pattern for forming a sub-wall part which is formed between said integrated circuit part and said main wall part, wherein said sub-wall part pattern is constituted of a plurality of linear wall part piece patterns.
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44. A phase shift mask, comprising:
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a phase shifter film having an integrated circuit part pattern for forming an integrated circuit part, a main wall part pattern for forming a main wall part which is formed to surround said integrated circuit part, and a sub-wall part pattern for forming a sub-wall part which is formed between said integrated circuit part and said main wall part, wherein said sub-wall part pattern is constituted of a plurality of dot-shaped wall part piece patterns.
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Specification