Structure having holes and method for producing the same

• US 20030175472A1
• Filed: 03/12/2003
• Published: 09/18/2003
• Est. Priority Date: 03/15/2002
• Status: Active Grant

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Fukutani, Kazuhiko, Den, Tohru, Yasui, Nobuhiro
• Granted Patent: US 6,972,146 B2
• Time in Patent Office: Days
• US Class Current: 428/66.6
• CPC Class Codes: C22C 30/00 Alloys containing less than 50% by weight of each constituent
• CPC Class Codes: C23C 14/185 by cathodic sputtering
• CPC Class Codes: C23C 14/5873 Removal of material
• CPC Class Codes: C25D 11/045 for forming AAO templates
• CPC Class Codes: C25D 11/18 After-treatment, e.g. pore-sealing
• CPC Class Codes: C25D 11/20 Electrolytic after-treatment
• CPC Class Codes: Y10S 977/781 Possessing nonosized surface openings that extend partially into or completely through the host material
• CPC Class Codes: Y10S 977/811 Of specified metal oxide composition, e.g. conducting or semiconducting compositions such as ITO, ZnOx
• CPC Class Codes: Y10S 977/814 Group IV based elements and compounds, e.g. CxSiyGez, porous silicon
• CPC Class Codes: Y10T 428/218 Aperture containing
• CPC Class Codes: Y10T 428/24273 including aperture
• CPC Class Codes: Y10T 428/24322 Composite web or sheet
• CPC Class Codes: Y10T 428/24331 including nonapertured component
• CPC Class Codes: Y10T 428/28 Web or sheet containing structurally defined element or component and having an adhesive outermost layer

Abstract

A structure having a hole, including a substrate, a first layer including an alumina hole, and a second layer disposed between the substrate and the fist layer, wherein the second layer contains silicon, and has a smaller hole than the alumina hole.

Claims

1. A structure having a hole, including:

a substrate,

a first layer including an alumina hole, and a second layer disposed between the substrate and the fist layer, wherein the second layer contains silicon, and has a smaller hole than the alumina hole.

2. A structure according to claim 1, wherein a third layer having conductivity is formed between the substrate and the second layer.

3. A structure according to claim 1, wherein a functional material is filled into the alumina hole.

4. A nano structure including an anodically oxidized alumina nano hole layer on a substrate formed by an anodic oxidation method, wherein an under layer is formed at a bottom of the anodically oxidized alumina nano hole layer via an adhesive layer having a pore, wherein a nano hole of the anodically oxidized alumina nano hole layer is penetrated to the under layer through the pore, and wherein the adhesive layer having the pore contains Si as a main component.

5. A nano structure according to claim 4, wherein the adhesive layer contains Si and Al as main components.

6. A nano structure according to claim 5, wherein the adhesive layer is an oxide containing Si and Al.

7. A nano structure according to claim 4, wherein an average diameter of the pore is not less than 1 nm to not more than 9 nm.

8. A nano structure according to claim 4, wherein the adhesive layer has a thickness of 1 to 50 nm.

9. A nano structure according to claim 4, wherein the under layer is conductive.

10. A nano structure according to claim 9, wherein the under layer contains a noble metal.

11. A nano structure according to claim 4, wherein an enclosing material is embedded into a part or all of the nano hole in the anodically oxidized alumina nano hole layer.

12. A method for producing a nano structure having at least an under layer and an anodically oxidized alumina nano hole layer on a substrate, wherein a nano hole of the anodically oxidized alumina nano hole layer is penetrated to the under layer, comprising the steps of:

sequentially laminating an under layer, an AlSi layer for an adhesive layer, and an Al layer on at least a substrate to form a laminated film, and

anodic oxidizing the laminated film to form the anodically oxidized alumina nano hole layer.

13. A method for producing a nano structure according to claim 12, wherein the step of forming the AlSi layer for the adhesive layer comprises the step of forming an AlSi layer containing 20 to 70 atomic % of Si using a film forming technique in which a substance is formed under the condition that Al and Si are in a non-equilibrium state.

14. A method for producing a nano structure according to claim 12, wherein the step of anodic oxidizing is conducted using an electrolyte containing sulfuric acid.

15. A method for producing a nano structure according to claim 12, further comprising a step of etching a part of the AlSi layer for the adhesive layer to penetrate the nano hole to the under layer after the anodic oxidation step.

16. A method for producing a nano structure according to claim 15, wherein the etching step is a wet etching step utilizing an acid or an alkali solution.

17. A method for producing a nano structure according to claim 12 or 13, comprising an annealing step before or after the etching step.

18. A method for producing a nano structure according to claim 12 or 15, comprising the step of embedding an enclosing material into the nano hole after the etching step.

19. A method for producing a nano structure according to claim 18, wherein the enclosing material embedding step is an electrodeposition step.