Magnetoresistive element

• US 20030179071A1
• Filed: 02/07/2003
• Published: 09/25/2003
• Est. Priority Date: 05/15/2001
• Status: Abandoned Application

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Hiramoto, Masayoshi, Odagawa, Akihiro, Iijima, Kenji, Matsukawa, Nozomu, Sakakima, Hiroshi
• Application Number:
  US10/344,296
• Publication Number:
  US 20030179071A1
• Time in Patent Office: Days
• US Class Current: 338/32R
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/06 using galvano-magnetic devices
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3295 Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

The present invention provides a tunnel magnetoresistive (TMR) element that increases a MR ratio and suppresses the unevenness in resistance. In an embodiment of the present invention, a surface property-controlling layer is arranged between the substrate and the tunnel layer. In another embodiment, at least one of the magnetic layers sandwiching the tunnel layer has an oriented crystal plane other than the closest packed plane. In still another embodiment, the at least one of the magnetic layers includes a magnetic element and a non-magnetic element and has an average electron number of 23.5 to 25.5 or 26.5 to 36. In still another embodiment, the TMR element includes an excess-element capturing layer. This layer includes an alloy or a compound that contains the excess element. The content of the excess element in the capturing layer is higher than those in the magnetic layers.

Claims

1. A magnetoresistive element comprising a substrate and a multi-layer film formed on the substrate, the multi-layer film comprising a tunnel layer and a pair of magnetic layers that sandwich the tunnel layer,

wherein a resistance value changes with a relative angle formed by magnetization directions of the pair of magnetic layers,

wherein a conductive layer is arranged between the substrate and the tunnel layer, and

wherein the conductive layer is at least one selected from:

a) a conductor composed of at least one selected from Pt, Pd, Ag, Au, C, Si, Ge, Sn and Pb;

b) an amorphous film;

c) a microcrystalline film having an average crystal diameter of 5 nm or less; and

d) a laminate including a Cu film and a non-Cu metal film.

2. The magnetoresistive element as claimed in claim 1, wherein the conductive layer is a non-magnetic film.

3. The magnetoresistive element as claimed in claim 1, wherein the conductive layer is a magnetic film.

4. The magnetoresistive element as claimed in claim 1, wherein the conductive layer is at least one selected from a), b) and c), and wherein the conductive layer has an average thickness of 10 nm or less.

5. The magnetoresistive element as claimed in claim 1, wherein the substrate is polycrystalline.

6. A magnetoresistive element comprising a substrate and a multi-layer film formed on the substrate, the multi-layer film comprising a tunnel layer and a pair of magnetic layers that sandwich the tunnel layer,

wherein a resistance value changes with a relative angle formed by magnetization directions of the pair of magnetic layers,

wherein at least one layer selected from the pair of magnetic layers comprises at least one selected from:

e) a lattice strain expressed by a lattice constant difference in a range of 0.1% to 5% with respect to a lattice constant that is calculated from the crystal structure of said at least one layer;

f) a crystal structure that is different from a preferential crystal structure at the ordinary temperature and the atmospheric pressure; and

g) a polycrystalline structure having an oriented crystal plane controlled to be other than the closest packed plane of the crystal structure of said at least one layer.

7. The magnetoresistive element as claimed in claim 6, wherein the multi-layer film further comprises a crystal-structure controlling layer, wherein the crystal-structure controlling layer is in contact with said at least one layer, and wherein at least one selected from e), f) and g) is introduced into the at least one layer by the crystal-structure controlling layer.

8. The magnetoresistive element as claimed in claim 7, wherein said at least one layer comprises at least e) and at least one element selected from Fe, Co and Ni, and wherein the crystal-structure controlling layer comprises said at least one element and an element other than Fe, Co and Ni.

9. The magnetoresistive element as claimed in claim 6, wherein the multi-layer film comprises a magnetic layer that comprises at least f) and g).

10. The magnetoresistive element as claimed in claim 9, wherein the multi-layer film comprises a magnetic layer that comprises e), f) and g).

11. A magnetoresistive element comprising a substrate and a multi-layer film formed on the substrate, the multi-layer film comprising a tunnel layer and a pair of magnetic layers that sandwich the tunnel layer,

wherein a resistance value changes with a relative angle formed by magnetization directions of the pair of magnetic layers,

wherein at least one layer selected from the pair of magnetic layers comprises at least one element selected from Fe, Co and Ni, and an element other than Fe, Co and Ni, and

wherein an average electron number of said at least one layer is in a range of 23.5 to 25.5 or 26.5 to 36, where the average electron number is a per-atom electron number calculated on the basis of the composition ratio of said at least one layer.

12. The magnetoresistive element as claimed in claim 11, wherein said element other than the magnetic element is at least one selected from Si, Al, Ti, V, Cr, Mn, Ru, Rh, Pd, Os, Ir, Pt, B, C, N and O.

13. The magnetoresistive element as claimed in claim 11, wherein the average electron number is in a range of 24.5 to 25.5.

14. The magnetoresistive element as claimed in claim 11, wherein the average electron number is in a range of 27.5 to 32.5.

15. A magnetoresistive element comprising a substrate and a multi-layer film formed on the substrate, the multi-layer film comprising a tunnel layer and a pair of magnetic layers that sandwich the tunnel layer,

wherein a resistance value changes with a relative angle formed by magnetization directions of the pair of magnetic layers,

wherein at least one layer selected from the layers in the multi-layer film that is other than the pair of magnetic layers comprises an excess element, and the excess element decreases spin polarization in at least one magnetic layer selected from the magnetic layers when the concentration of the excess element in said at least one magnetic layer increases, and

wherein the multi-layer film further comprises an excess-element capturing layer including an alloy or a compound that contains the excess element, and the content of the excess element in the excess-element capturing layer is higher than those in the magnetic layers.

16. The magnetoresistive element as claimed in claim 15, wherein the multi-layer film comprises an excess-element supplying layer, and the content of the excess-element is not lower than that in the excess-element capturing layer.

17. The magnetoresistive element as claimed in claim 16, wherein the excess-element supplying layer is the tunnel layer, and wherein the excess-element is at least one selected from B, C, N and O.

18. The magnetoresistive element as claimed in claim 17, wherein the excess-element capturing layer comprises a compound containing a metal, and the metal has a formation free-energy for a compound selected from an oxide, a nitride, a carbide and a boride that is lower than that of Fe.

19. The magnetoresistive element as claimed in claim 16, wherein the excess-element supplying layer is at least one selected from an antiferromagnetic layer and a laminated ferrimagnetic layer.

20. The magnetoresistive element as claimed in claim 19, wherein the excess-element is at least one selected from Mn and Ru.

21. The magnetoresistive element as claimed in claim 15, wherein the distance between the excess-element capturing layer and at least one selected from the pair of magnetic layers with respect to the thickness direction of the multi-layer film is 10 nm or less.